公开(公告)号：US20240411227A1

公开(公告)日：2024-12-12

申请号：US18427044

申请日：2024-01-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung Gap Im ,  Seonkyu Shin ,  Sanghoon Ahn ,  Hanhum Park ,  Minkyung Cho ,  Chungryeol Lee ,  Seungmin Lee ,  Changhyeon Lee ,  Sukwon Jang

IPC: G03F7/11 ,  G03F7/031 ,  G03F7/16 ,  H01L21/027 ,  H01L21/308

Abstract: A photolithograph method is provided. The photolithograph method may include forming a photoresist pattern on a substrate and conformally forming a liner layer on the photoresist pattern, wherein the forming of the liner layer includes a deposition process of reacting an initiator and a monomer with each other, the monomer includes multiple bonds between carbon atoms, the initiator includes a material that forms a radical by thermal decomposition, a copolymer is formed by an initiating reaction between the radical and the monomer, and the liner layer includes the copolymer.

公开(公告)号：US11830737B2

公开(公告)日：2023-11-28

申请号：US17520634

申请日：2021-11-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hanhum Park ,  Insung Kim ,  Woojeong Shin ,  Jung-Hoon Lee ,  Sanghyeon Kim ,  Ji Young Choi

IPC: H01L21/033

CPC classification number: H01L21/0338 ,  H01L21/0335 ,  H01L21/0337

Abstract: Disclosed are semiconductor device fabricating method and semiconductor device fabricated by the same. The method includes forming on a lower mask layer first upper mask patterns and sacrificial spacers that cover sidewalls of the first upper mask patterns, forming first holes in the lower mask layer below the first upper mask patterns, forming second holes in the lower mask layer not covered by the first upper mask patterns and the sacrificial spacers, forming second upper mask patterns filling a space between the sacrificial spacers on the lower mask layer and also forming sacrificial patterns filling the first and second holes, removing the sacrificial spacers, using the first and second upper mask patterns to etch the lower mask layer, and removing the sacrificial patterns.

公开(公告)号：US20250046619A1

公开(公告)日：2025-02-06

申请号：US18791926

申请日：2024-08-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Guifu Yang ,  Sunghwan Jang ,  Sanghyeon Kim ,  Jinbum Kim ,  Hanhum Park ,  Sunguk Jang

IPC: H01L21/3115 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3213

Abstract: A method of manufacturing a semiconductor apparatus includes forming a target layer, a bottom mask layer including a first mask, and a photoresist pattern, on a substrate; contracting the photoresist pattern; forming a mandrill bar on the first mask layer using the photoresist pattern that had been contracted; forming a conformal spacer layer on the first mask and the mandrill bar; etching the spacer layer such that at least a portion of the first mask is free of the spacer layer; forming a sacrificial layer on the at least the portion of the first mask; forming a hard-mask bar by etching the spacer layer and the first mask; and patterning the target layer using the hard-mask bar.