公开(公告)号：US20140141616A1

公开(公告)日：2014-05-22

申请号：US14086426

申请日：2013-11-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Won BAE ,  Yongsun KO ,  Byoungho KWON ,  Bo yun KIM ,  Hongjin KIM ,  Sungoh PARK ,  Kuntack LEE ,  Hyosan LEE ,  Sol HAN

IPC: H01L21/321 ,  H01L21/02

CPC classification number: C09K13/06 ,  C23F1/26 ,  H01L21/02074 ,  H01L21/32134 ,  H01L21/76865 ,  H01L21/76883

Abstract: An etching composition includes about 1 wt % to about 7 wt % of hydrogen peroxide, about 20 wt % to about 80 wt % of phosphoric acid, about 0.001 wt % to about 1 wt % of an amine or amide polymer, 0 wt % to about 55 wt % of sulfuric acid, and about 10 wt % to about 45 wt % of deionized water.

Abstract translation: 蚀刻组合物包含约1重量％至约7重量％的过氧化氢，约20重量％至约80重量％的磷酸，约0.001重量％至约1重量％的胺或酰胺聚合物，0重量％ 约55重量％的硫酸和约10重量％至约45重量％的去离子水。

公开(公告)号：US20240038563A1

公开(公告)日：2024-02-01

申请号：US18138771

申请日：2023-04-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun Kyu LEE ,  Hongjin KIM ,  Jeongjae BANG

IPC: H01L21/677 ,  B65G17/20 ,  B66C19/00 ,  F16F15/08 ,  B66C13/04 ,  B66C7/12 ,  B66C9/04

CPC classification number: H01L21/67706 ,  H01L21/67724 ,  H01L21/6773 ,  H01L21/67733 ,  B65G17/20 ,  B66C19/00 ,  F16F15/08 ,  B66C13/04 ,  B66C7/12 ,  B66C9/04

Abstract: A substrate transfer device includes a housing accommodating a carrier for storing a substrate, a carrier lifter moving the carrier in a vertical direction relative to an upper surface of the housing, a vertical stabilization unit connected to a lower part of the carrier lifter and reducing a vertical vibration of the carrier, a rotation stabilization unit connected to a lower part of the vertical stabilization unit and reducing rotation of the carrier, and a carrier holder connected to a lower part of the rotation stabilization unit. The carrier holder holds the carrier. The vertical stabilization unit includes an upper plate connected to the carrier lifter, a lower plate connected to the rotation stabilization unit, and a buffer disposed between the upper plate and the lower plate. The buffer contracts or relaxes to reduce the vertical vibration of the carrier.

公开(公告)号：US20160032185A1

公开(公告)日：2016-02-04

申请号：US14879835

申请日：2015-10-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Won BAE ,  Yongsun KO ,  Byoungho KWON ,  Bo yun KIM ,  Hongjin KIM ,  Sungoh PARK ,  Kuntack LEE ,  Hyosan LEE ,  Sol HAN

IPC: C09K13/06 ,  C23F1/26

CPC classification number: C09K13/06 ,  C23F1/26 ,  H01L21/02074 ,  H01L21/32134 ,  H01L21/76865 ,  H01L21/76883

Abstract: An etching composition includes about 1 wt % to about 7 wt % of hydrogen peroxide, about 20 wt % to about 80 wt % of phosphoric acid, about 0.001 wt % to about 1 wt % of an amine or amide polymer, 0 wt % to about 55 wt % of sulfuric acid, and about 10 wt % to about 45 wt % of deionized water.

Abstract translation: 蚀刻组合物包含约1重量％至约7重量％的过氧化氢，约20重量％至约80重量％的磷酸，约0.001重量％至约1重量％的胺或酰胺聚合物，0重量％ 约55重量％的硫酸和约10重量％至约45重量％的去离子水。

公开(公告)号：US20130183824A1

公开(公告)日：2013-07-18

申请号：US13733506

申请日：2013-01-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byoungho KWON ,  Kuntack LEE ,  Yongsun KO ,  Hongjin KIM ,  Sangwon BAE ,  Sigyung AHN ,  Jun-Youl YANG ,  Sol HAN ,  Bo yun KIM ,  Myung-Ki HONG

IPC: H01L21/768

CPC classification number: H01L21/76841 ,  H01L21/02074 ,  H01L21/76861

Abstract: A method of fabricating a semiconductor device includes forming a first layer including a first metal, forming a second layer including a second metal, the second layer being adjacent to the first layer, polishing top surfaces of the first and second layers, and cleaning the first and second layers using a cleaning solution. The cleaning solution may include an etching solution etching the first and second layers and an inhibitor suppressing the second layer from being over etched.

Abstract translation: 制造半导体器件的方法包括形成包括第一金属的第一层，形成包括第二金属的第二层，第二层邻近第一层，抛光第一层和第二层的顶表面，以及清洁第一层 和使用清洁溶液的第二层。 清洁溶液可以包括蚀刻溶液，蚀刻第一和第二层以及抑制第二层的抑制剂被过蚀刻。

公开(公告)号：US20240079400A1

公开(公告)日：2024-03-07

申请号：US18319193

申请日：2023-05-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hongjin KIM

IPC: H01L25/18 ,  H01L23/00 ,  H10B80/00

CPC classification number: H01L25/18 ,  H01L24/48 ,  H01L24/49 ,  H10B80/00 ,  H01L25/0657

Abstract: A semiconductor package includes a substrate, a controller chip on a first surface of the substrate, a first chip stack on the controller chip, a second chip stack on the substrate in adjacent spaced apart relationship with the first chip stack, a third chip stack including a first group of semiconductor chips above or below the first chip stack and a second group of semiconductor chips above or below the second chip stack. A buffer chip is on the substrate between the first chip stack and the second chip stack, and the buffer chip is electrically connected to the third chip stack and the controller chip. An encapsulant encapsulates at least a portion of the first chip stack, the second chip stack, and the third chip stack. Connection bumps are on an opposite second surface of the substrate. The first chip stack and the second chip stack are directly electrically connected to the controller chip, and the third chip stack is electrically connected to the controller chip by the buffer chip.

公开(公告)号：US20210033965A1

公开(公告)日：2021-02-04

申请号：US16901466

申请日：2020-06-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ginam PARK ,  Sangmin KIM ,  Jongsam KIM ,  Hongjin KIM ,  Chuljun PARK ,  Yongjun AHN ,  Sangkyung LEE ,  Junyong LEE ,  Taijo JEON ,  Kyubum CHO

IPC: G03F1/66 ,  B01D46/44 ,  B01D46/00 ,  B01D46/42 ,  F24F3/14 ,  H05B1/02 ,  F24H3/04 ,  F25B21/02

Abstract: An apparatus for storing a mask includes a main body comprising a first region and a second region, the first region having a plurality of mask containers, a gas supply pipe having an outer portion outside of the main body, a fan in the first region to propel the gas from the second region to the first region, a filter disposed at a front end and/or a rear end of the fan, a heat exchanger in the second region and configured to exchange heat with the flowing gas, a Peltier element at the outer portion of the gas supply pipe, a first sensor installed in the gas supply pipe upstream of the Peltier element, a second sensor installed in the second region in a lower position to the heat exchanger, and a controller connected to the first and second sensors and the Peltier element.

公开(公告)号：US20130199726A1

公开(公告)日：2013-08-08

申请号：US13755533

申请日：2013-01-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hongjin KIM ,  Kyoungseob KIM ,  SungHo SHIN ,  Kuntack LEE ,  Kihong CHO

IPC: H01L21/465

CPC classification number: H01L21/30625 ,  B24C1/08 ,  H01L21/02021 ,  H01L21/02057 ,  H01L21/465 ,  H01L21/67219

Abstract: A substrate treating method may include jetting a fluid containing an abrasive onto a substrate, and polishing the substrate using the jetted fluid.

Abstract translation: 基板处理方法可以包括将含有研磨剂的流体喷射到基板上，并且使用喷射流体对基板进行抛光。