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公开(公告)号:US20250138424A1
公开(公告)日:2025-05-01
申请号:US18613917
申请日:2024-03-22
Applicant: Samsung Electronics Co., Ltd.
Inventor: Dmitry ANDROSOV , Cheol KANG , Hana KIM , Sungan DO , Yonghoon MOON , Hoyoon PARK , Jaejun LEE
IPC: G03F7/039
Abstract: Provided are a photoreactive polymer compound including a first repeating unit represented by Formula 1, a photoresist composition including the same, and a method of forming a pattern by using the photoresist composition: wherein a description of Formula 1 is provided in the present specification.
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公开(公告)号:US20250021003A1
公开(公告)日:2025-01-16
申请号:US18537601
申请日:2023-12-12
Applicant: Samsung Electronics Co., Ltd.
Inventor: Cheol KANG , Haengdeog KOH , Yoonhyun KWAK , Minsang KIM , Beomseok KIM , Hana KIM , Hoyoon PARK , Chanjae AHN , Jaejun LEE , Sungwon CHOI
Abstract: Provided are a polymer including a first repeating unit represented by Formula 1 below, a resist composition including the same, a method of forming a pattern by using the same, and a monomer represented by Formula 10 below. In Formulae 1 and 10, L11 to L13, a11 to a13, X11, Rf, and R11 to R13 are as described in the specification.
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3.
公开(公告)号:US20240255847A1
公开(公告)日:2024-08-01
申请号:US18404865
申请日:2024-01-04
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hana KIM , Yoonhyun KWAK , Hyeran KIM , Beomseok KIM , Hoyoon PARK , Sunyoung LEE , Minyoung HA
CPC classification number: G03F7/0045 , G03F7/0048 , G03F7/039
Abstract: Provided are an organic salt represented by Formula 1 below, a photoresist composition including the same, and a method of forming a pattern by using the photoresist composition:
For descriptions of L1, n1, R1, and A+ in Formula 1, refer to those provided herein.-
4.
公开(公告)号:US20240199540A1
公开(公告)日:2024-06-20
申请号:US18312825
申请日:2023-05-05
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hoyoon PARK , Hana KIM , Kyuhyun IM , Haengdeog KOH , Yoonhyun KWAK , Hyeran KIM , Changheon LEE
IPC: C07C323/09 , G03F7/004 , G03F7/20
CPC classification number: C07C323/09 , G03F7/0042 , G03F7/2004 , G03F7/2059 , C07C2601/16
Abstract: Provided are a carboxylate salt represented by Formula 1, a photoresist composition including the same, and a pattern forming method using the same:
wherein A11, L11, L12, a11, a12, R11 to R13, b13, n11, n12, and M+ in Formula 1 are defined as described in the specification.-
5.
公开(公告)号:US20240327338A1
公开(公告)日:2024-10-03
申请号:US18483895
申请日:2023-10-10
Applicant: Samsung Electronics Co., Ltd.
Inventor: Aram JEON , Hana KIM , Beomseok KIM , Hoyoon PARK , Kyuhyun IM , Jinwon JEON , Sungwon CHOI
IPC: C07C309/58 , C07C309/42 , G03F7/004 , G03F7/029 , G03F7/20
CPC classification number: C07C309/58 , C07C309/42 , G03F7/0045 , G03F7/0048 , G03F7/029 , G03F7/2004
Abstract: Provided are an organic salt represented by Formula 1, a resist composition including the same, and a method of forming a pattern by using the same:
A11+B11− Formula 1
wherein, in Formula 1,
A11+ is represented by Formula 1A, and B11− is represented by Formula 1B,
wherein descriptions of R11 to R13, L21, L22, a21, a22, R21, R22, Rf, b22, c11 and n11 in Formulae 1A and 1B are provided herein.-
公开(公告)号:US20240319595A1
公开(公告)日:2024-09-26
申请号:US18612246
申请日:2024-03-21
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hoyoon PARK , Haengdeog KOH , Yoonhyun KWAK , Minsang KIM , Beomseok KIM , Hana KIM , Hyeran KIM , Chanjae AHN , Kyuhyun IM , Sungwon CHOI
IPC: G03F7/039
CPC classification number: G03F7/039
Abstract: Provided are a photoreactive polymer compound including a first repeating unit represented by Formula 1 below, a photoresist composition including the same, and a method of forming a pattern by using the photoresist composition:
A description of Formula 1 is provided herein.-
7.
公开(公告)号:US20240317672A1
公开(公告)日:2024-09-26
申请号:US18483911
申请日:2023-10-10
Applicant: Samsung Electronics Co., Ltd.
Inventor: Dmitry ANDROSOV , Cheol KANG , Haengdeog KOH , Yoonhyun KWAK , Beomseok KIM , Hana KIM , Hoyoon PARK
CPC classification number: C07C69/94 , G03F7/0385 , G03F7/039 , C07C2601/08 , C07C2603/54
Abstract: Disclosed are a polycarboxylate compound represented by Formula 1 below, a resist composition including the same, and a method of forming a pattern using the same.
In Formula 1, A11, X11, m11, n11, R13 and b13 are as described in the specification.
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