公开(公告)号：US11011511B2

公开(公告)日：2021-05-18

申请号：US16167117

申请日：2018-10-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae-Lim Kang ,  Hyun-Jo Kim ,  Jong-Mil Youn ,  Soo-Hun Hong

IPC: H01L27/02 ,  H01L29/16 ,  H01L29/08 ,  H01L27/088 ,  H01L29/78 ,  H01L21/02

Abstract: An ESD protection device includes a substrate having an active fin extending in a first direction, a plurality of gate structures extending in a second direction at a given angle with respect to the first direction and partially covering the active fin, an epitaxial layer in a recess on a portion of the active fin between the gate structures, an impurity region under the epitaxial layer, and a contact plug contacting the epitaxial layer. A central portion of the impurity region is thicker than an edge portion of the impurity region, in the first direction. The contact plug lies over the central portion of the impurity region.

公开(公告)号：US10032886B2

公开(公告)日：2018-07-24

申请号：US15170230

申请日：2016-06-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae-Yup Chung ,  Hyun-Jo Kim ,  Seong-Yul Park ,  Se-Wan Park ,  Jong-Mil Youn ,  Jeong-Hyo Lee ,  Hwa-Sung Rhee ,  Hee-Don Jeong ,  Ji-Yong Ha

IPC: H01L21/02 ,  H01L29/66 ,  H01L27/092 ,  H01L29/08 ,  H01L29/78 ,  H01L21/762 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/165

Abstract: A semiconductor device includes a fin-type pattern including a first short side and a second short side opposed to each other, a first trench in contact with the first short side, a second trench in contact with the second short side, a first field insulating film in the first trench, the first field insulating film including a first portion and a second portion arranged sequentially from the first short side, and a height of the first portion being different from a height of the second portion, a second field insulating film in the second trench, and a first dummy gate on the first portion of the first field insulating film.

公开(公告)号：US10269928B2

公开(公告)日：2019-04-23

申请号：US15717843

申请日：2017-09-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soo-Hun Hong ,  Hee-Soo Kang ,  Hyun-Jo Kim ,  Sang-Pil Sim ,  Hee-Don Jung

IPC: H01L29/161 ,  H01L29/66 ,  H01L27/088 ,  H01L29/06 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/08 ,  H01L29/16 ,  H01L21/762 ,  H01L29/78 ,  H01L29/165

Abstract: A semiconductor device includes a substrate including first to third fins aligned in a first direction, a first trench arranged between the first fin and the second fin, and a second trench arranged between the second fin and the third fin. The semiconductor device further includes a first field insulating film arranged in the first trench, a second field insulating film formed in the second trench, a first dummy gate arranged on the first field insulating film and a second dummy gate at least partly arranged on the second field insulating film. A lower surface of the second field insulating film is arranged to be lower than a lower surface of the first field insulating film.

公开(公告)号：US08878309B1

公开(公告)日：2014-11-04

申请号：US14102897

申请日：2013-12-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Soo-Hun Hong ,  Hee-Soo Kang ,  Hyun-Jo Kim ,  Sang-Pil Sim ,  Hee-Don Jung

IPC: H01L29/78 ,  H01L27/088

CPC classification number: H01L27/0886 ,  H01L21/823412 ,  H01L21/823425 ,  H01L21/823431 ,  H01L21/823481

Abstract: A semiconductor device includes a substrate having first, second and third fins longitudinally aligned in a first direction. A first trench extends between the first and second fins, and a second trench extends between the second and third fins. A first portion of field insulating material is disposed in the first trench, and a second portion of field insulating material is disposed in the second trench. An upper surface of the second portion of the field insulating material is recessed in the second trench at a level below uppermost surfaces of the second and third fins. A first dummy gate is disposed on an upper surface of the first portion of the field insulating material, and a second dummy gate at least partially extends into the second trench to the upper surface of the second portion of the field insulating material.

Abstract translation: 半导体器件包括具有沿第一方向纵向排列的第一，第二和第三鳍片的衬底。 第一沟槽在第一和第二鳍之间延伸，第二沟槽在第二和第三鳍之间延伸。 场绝缘材料的第一部分设置在第一沟槽中，场绝缘材料的第二部分设置在第二沟槽中。 场绝缘材料的第二部分的上表面在第二沟槽中凹陷在第二和第三鳍片的最上表面以下的水平面处。 第一伪栅极设置在场绝缘材料的第一部分的上表面上，并且第二伪栅极至少部分地延伸到第二沟槽中至场绝缘材料的第二部分的上表面。

公开(公告)号：US12074157B2

公开(公告)日：2024-08-27

申请号：US17320477

申请日：2021-05-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dae-Lim Kang ,  Hyun-Jo Kim ,  Jong-Mil Youn ,  Soo-Hun Hong

IPC: H01L27/02 ,  H01L21/02 ,  H01L27/088 ,  H01L29/08 ,  H01L29/16 ,  H01L29/78

CPC classification number: H01L27/0266 ,  H01L21/02293 ,  H01L27/0248 ,  H01L27/0886 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/7831 ,  H01L29/785

Abstract: An ESD protection device includes a substrate having an active fin extending in a first direction, a plurality of gate structures extending in a second direction at a given angle with respect to the first direction and partially covering the active fin, an epitaxial layer in a recess on a portion of the active fin between the gate structures, an impurity region under the epitaxial layer, and a contact plug contacting the epitaxial layer. A central portion of the impurity region is thicker than an edge portion of the impurity region, in the first direction. The contact plug lies over the central portion of the impurity region.

公开(公告)号：US10276567B2

公开(公告)日：2019-04-30

申请号：US15014291

申请日：2016-02-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju-Youn Kim ,  Hyun-Jo Kim ,  Hwa-Sung Rhee

IPC: H01L27/02 ,  H01L27/08 ,  H01L29/06 ,  H01L27/088

Abstract: Semiconductor devices are provided. The semiconductor device includes an active fin which extends along a first direction and has a protruding shape, a gate structure which is disposed on the active fin to extend along a second direction intersecting the first direction, and a spacer which is disposed on at least one side of the gate structure, wherein the gate structure includes a first area and a second area which is adjacent to the first area in the second direction, wherein a first width of the first area in the first direction is different from a second width of the second area in the first direction, and the spacer extends continuously along both the first area and the second area.

公开(公告)号：US09679896B2

公开(公告)日：2017-06-13

申请号：US14968297

申请日：2015-12-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-Soo Yoon ,  Min-Kwon Choi ,  Yang-Soo Son ,  Hyun-Jo Kim ,  Han-Ii Yu

IPC: H01L27/088 ,  H01L23/00 ,  H01L23/58 ,  H01L29/40 ,  H01L29/78

CPC classification number: H01L27/0886 ,  H01L23/564 ,  H01L23/585 ,  H01L29/402 ,  H01L29/785 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A moisture blocking structure includes an active fin disposed on a sealing region of a substrate, the substrate including a chip region and the sealing region surrounding a periphery of the chip region, the active fin continuously surrounding the chip region and having a winding line shape in a plan view. A gate structure covers the active fin and surrounds the periphery of the chip region. A conductive structure is disposed on the gate structure, the conductive structure surrounding the periphery of the chip region.

公开(公告)号：US09379106B2

公开(公告)日：2016-06-28

申请号：US14504822

申请日：2014-10-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soo-Hun Hong ,  Hee-Soo Kang ,  Hyun-Jo Kim ,  Sang-Pil Sim ,  Hee-Don Jung

IPC: H01L29/06 ,  H01L27/088 ,  H01L21/8234

CPC classification number: H01L29/66545 ,  H01L21/762 ,  H01L21/76229 ,  H01L21/823412 ,  H01L21/823425 ,  H01L21/823431 ,  H01L21/823481 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823878 ,  H01L27/0886 ,  H01L27/0924 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

Abstract: A semiconductor device includes a substrate including first to third fins aligned in a first direction, a first trench arranged between the first fin and the second fin, and a second trench arranged between the second fin and the third fin. The semiconductor device further includes a first field insulating film arranged in the first trench, a second field insulating film formed in the second trench, a first dummy gate arranged on the first field insulating film, and a second dummy gate at least partly arranged on the second field insulating film. A lower surface of the second field insulating film is arranged to be lower than a lower surface of the first field insulating film.

Abstract translation: 一种半导体器件包括：衬底，包括沿第一方向排列的第一至第三鳍片，布置在第一鳍片和第二鳍片之间的第一沟槽，以及布置在第二鳍片和第三鳍片之间的第二沟槽。 半导体器件还包括布置在第一沟槽中的第一场绝缘膜，形成在第二沟槽中的第二场绝缘膜，布置在第一场绝缘膜上的第一虚栅极，以及至少部分地布置在第二沟槽上的第二虚栅极 第二场绝缘膜。 第二场绝缘膜的下表面被布置成低于第一场绝缘膜的下表面。

公开(公告)号：US11183496B2

公开(公告)日：2021-11-23

申请号：US16366140

申请日：2019-03-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju-Youn Kim ,  Hyun-Jo Kim ,  Hwa-Sung Rhee

IPC: H01L27/088 ,  H01L27/02 ,  H01L29/06 ,  H01L29/66 ,  H01L29/78

Abstract: Semiconductor devices are provided. The semiconductor device includes an active fin which extends along a first direction and has a protruding shape, a gate structure which is disposed on the active fin to extend along a second direction intersecting the first direction, and a spacer which is disposed on at least one side of the gate structure, wherein the gate structure includes a first area and a second area which is adjacent to the first area in the second direction, wherein a first width of the first area in the first direction is different from a second width of the second area in the first direction, and the spacer extends continuously along both the first area and the second area.

公开(公告)号：US10002943B2

公开(公告)日：2018-06-19

申请号：US15164246

申请日：2016-05-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soo-Hun Hong ,  Hee-Soo Kang ,  Hyun-Jo Kim ,  Sang-Pil Sim ,  Hee-Don Jung

IPC: H01L29/78 ,  H01L29/66 ,  H01L27/088 ,  H01L29/06 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/08 ,  H01L29/16 ,  H01L29/161 ,  H01L21/762 ,  H01L21/8234 ,  H01L29/165

CPC classification number: H01L29/66545 ,  H01L21/762 ,  H01L21/76229 ,  H01L21/823412 ,  H01L21/823425 ,  H01L21/823431 ,  H01L21/823481 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823878 ,  H01L27/0886 ,  H01L27/0924 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

Abstract: A semiconductor device includes a substrate including first to third fins aligned in a first direction, a first trench arranged between the first fin and the second fin, and a second trench arranged between the second fin and the third fin. The semiconductor device further includes a first field insulating film arranged in the first trench, a second field insulating film formed in the second trench, a first dummy gate arranged on the first field insulating film and a second dummy gate at least partly arranged on the second field insulating film. A lower surface of the second field insulating film is arranged to be lower than a lower surface of the first field insulating film.