公开(公告)号：US09698264B2

公开(公告)日：2017-07-04

申请号：US14991127

申请日：2016-01-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju-Youn Kim ,  Hyung-Soon Jang ,  Jong-Mil Youn ,  Tae-Won Ha

IPC: H01L27/088 ,  H01L29/78 ,  H01L29/423 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/49 ,  H01L29/51 ,  H01L29/06 ,  H01L29/161 ,  H01L29/20 ,  H01L29/165 ,  H01L27/02

CPC classification number: H01L29/7848 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823842 ,  H01L21/823871 ,  H01L27/0207 ,  H01L27/092 ,  H01L27/0922 ,  H01L27/0924 ,  H01L29/0642 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/161 ,  H01L29/165 ,  H01L29/20 ,  H01L29/42364 ,  H01L29/42372 ,  H01L29/42376 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/4983 ,  H01L29/51 ,  H01L29/513 ,  H01L29/517

Abstract: A semiconductor device includes a substrate including a first active region, a second active region and a field region between the first and second active regions, and a gate structure formed on the substrate to cross the first active region, the second active region and the field region. The gate structure includes a p type metal gate electrode and an n-type metal gate electrode directly contacting each other, the p-type metal gate electrode extends from the first active region less than half way toward the second active region.

公开(公告)号：US09502417B2

公开(公告)日：2016-11-22

申请号：US15046572

申请日：2016-02-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju-Youn Kim ,  Hyung-Soon Jang ,  Jong-Mil Youn ,  Tae-Won Ha

IPC: H01L21/70 ,  H01L27/092 ,  H01L29/423 ,  H01L21/8238 ,  H01L29/49 ,  H01L29/51 ,  H01L29/06 ,  H01L29/161 ,  H01L29/20 ,  H01L29/165 ,  H01L29/78 ,  H01L27/02

CPC classification number: H01L29/7848 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823842 ,  H01L21/823871 ,  H01L27/0207 ,  H01L27/092 ,  H01L27/0922 ,  H01L27/0924 ,  H01L29/0642 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/161 ,  H01L29/165 ,  H01L29/20 ,  H01L29/42364 ,  H01L29/42372 ,  H01L29/42376 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/4983 ,  H01L29/51 ,  H01L29/513 ,  H01L29/517

Abstract: A semiconductor device includes a substrate including a first active region, a second active region and a field region between the first and second active regions, and a gate structure formed on the substrate to cross the first active region, the second active region and the field region. The gate structure includes a p type metal gate electrode and an n-type metal gate electrode directly contacting each other, the p-type metal gate electrode extends from the first active region less than half way toward the second active region.

Abstract translation: 半导体器件包括：衬底，包括第一有源区，第二有源区和第一有源区和第二有源区之间的场区;以及栅极结构，形成在衬底上以跨过第一有源区，第二有源区和场 地区。 栅极结构包括彼此直接接触的p型金属栅电极和n型金属栅极电极，p型金属栅极电极从第一有源区域延伸到第二有源区域的一半以下。

公开(公告)号：US20180366582A1

公开(公告)日：2018-12-20

申请号：US16109350

申请日：2018-08-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju-Youn Kim ,  Hyung-Soon Jang ,  Jong-Mil Youn ,  Tae-Won Ha

IPC: H01L29/78 ,  H01L29/423 ,  H01L27/092 ,  H01L27/02 ,  H01L29/51 ,  H01L29/49 ,  H01L29/06 ,  H01L29/20 ,  H01L29/161 ,  H01L29/165 ,  H01L21/8238

Abstract: A semiconductor device includes a substrate including a first active region, a second active region and a field region between the first and second active regions, and a gate structure formed on the substrate to cross the first active region, the second active region and the field region. The gate structure includes a p type metal gate electrode and an n-type metal gate electrode directly contacting each other, the p-type metal gate electrode extends from the first active region less than half way toward the second active region.

公开(公告)号：US20170278966A1

公开(公告)日：2017-09-28

申请号：US15618623

申请日：2017-06-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju-Youn Kim ,  Hyung-Soon Jang ,  Jong-Mil Youn ,  Tae-Won Ha

IPC: H01L29/78 ,  H01L29/51 ,  H01L29/423 ,  H01L21/8238 ,  H01L29/06 ,  H01L27/02 ,  H01L29/161 ,  H01L29/20 ,  H01L29/49 ,  H01L27/092 ,  H01L29/165

CPC classification number: H01L29/7848 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823842 ,  H01L21/823871 ,  H01L27/0207 ,  H01L27/092 ,  H01L27/0922 ,  H01L27/0924 ,  H01L29/0642 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/161 ,  H01L29/165 ,  H01L29/20 ,  H01L29/42364 ,  H01L29/42372 ,  H01L29/42376 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/4983 ,  H01L29/51 ,  H01L29/513 ,  H01L29/517

Abstract: A semiconductor device includes a substrate including a first active region, a second active region and a field region between the first and second active regions, and a gate structure formed on the substrate to cross the first active region, the second active region and the field region. The gate structure includes a p type metal gate electrode and an n-type metal gate electrode directly contacting each other, the p-type metal gate electrode extends from the first active region less than half way toward the second active region.

公开(公告)号：US09240411B1

公开(公告)日：2016-01-19

申请号：US14881525

申请日：2015-10-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju-Youn Kim ,  Hyung-Soon Jang ,  Jong-Mil Youn ,  Tae-Won Ha

IPC: H01L27/092 ,  H01L29/423 ,  H01L29/49 ,  H01L29/06

CPC classification number: H01L29/7848 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823842 ,  H01L21/823871 ,  H01L27/0207 ,  H01L27/092 ,  H01L27/0922 ,  H01L27/0924 ,  H01L29/0642 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/161 ,  H01L29/165 ,  H01L29/20 ,  H01L29/42364 ,  H01L29/42372 ,  H01L29/42376 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/4983 ,  H01L29/51 ,  H01L29/513 ,  H01L29/517

Abstract: A semiconductor device includes a substrate including a first active region, a second active region and a field region between the first and second active regions, and a gate structure formed on the substrate to cross the first active region, the second active region and the field region. The gate structure includes a p type metal gate electrode and an n-type metal gate electrode directly contacting each other, the p-type metal gate electrode extends from the first active region less than half way toward the second active region.

公开(公告)号：US09209184B2

公开(公告)日：2015-12-08

申请号：US14683525

申请日：2015-04-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju-Youn Kim ,  Hyung-Soon Jang ,  Jong-Mil Youn ,  Tae-Won Ha

IPC: H01L27/092 ,  H01L29/423 ,  H01L21/8238 ,  H01L29/49 ,  H01L29/51

CPC classification number: H01L29/7848 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823842 ,  H01L21/823871 ,  H01L27/0207 ,  H01L27/092 ,  H01L27/0922 ,  H01L27/0924 ,  H01L29/0642 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/161 ,  H01L29/165 ,  H01L29/20 ,  H01L29/42364 ,  H01L29/42372 ,  H01L29/42376 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/4983 ,  H01L29/51 ,  H01L29/513 ,  H01L29/517

Abstract: A semiconductor device includes a substrate including a first active region, a second active region and a field region between the first and second active regions, and a gate structure formed on the substrate to cross the first active region, the second active region and the field region. The gate structure includes a p type metal gate electrode and an n-type metal gate electrode directly contacting each other, the p-type metal gate electrode extends from the first active region less than half way toward the second active region.

Abstract translation: 半导体器件包括：衬底，包括第一有源区，第二有源区和第一有源区和第二有源区之间的场区;以及栅极结构，形成在衬底上以跨过第一有源区，第二有源区和场 地区。 栅极结构包括彼此直接接触的p型金属栅电极和n型金属栅极电极，p型金属栅极电极从第一有源区域延伸到第二有源区域的一半以下。

公开(公告)号：US11581435B2

公开(公告)日：2023-02-14

申请号：US16895059

申请日：2020-06-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju-Youn Kim ,  Hyung-Soon Jang ,  Jong-Mil Youn ,  Tae-Won Ha

IPC: H01L29/78 ,  H01L29/423 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/49 ,  H01L29/51 ,  H01L29/06 ,  H01L29/161 ,  H01L29/20 ,  H01L29/165 ,  H01L27/02

Abstract: A semiconductor device includes a substrate including a first active region, a second active region and a field region between the first and second active regions, and a gate structure formed on the substrate to cross the first active region, the second active region and the field region. The gate structure includes a p type metal gate electrode and an n-type metal gate electrode directly contacting each other, the p-type metal gate electrode extends from the first active region less than half way toward the second active region.

公开(公告)号：US10714614B2

公开(公告)日：2020-07-14

申请号：US16109350

申请日：2018-08-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju-Youn Kim ,  Hyung-Soon Jang ,  Jong-Mil Youn ,  Tae-Won Ha

IPC: H01L29/78 ,  H01L29/423 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/49 ,  H01L29/51 ,  H01L29/06 ,  H01L29/161 ,  H01L29/20 ,  H01L29/165 ,  H01L27/02

Abstract: A semiconductor device includes a substrate including a first active region, a second active region and a field region between the first and second active regions, and a gate structure formed on the substrate to cross the first active region, the second active region and the field region. The gate structure includes a p type metal gate electrode and an n-type metal gate electrode directly contacting each other, the p-type metal gate electrode extends from the first active region less than half way toward the second active region.

公开(公告)号：US10084088B2

公开(公告)日：2018-09-25

申请号：US15618623

申请日：2017-06-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju-Youn Kim ,  Hyung-Soon Jang ,  Jong-Mil Youn ,  Tae-Won Ha

IPC: H01L21/8238 ,  H01L29/78 ,  H01L29/423 ,  H01L27/092 ,  H01L29/49 ,  H01L29/51 ,  H01L29/06 ,  H01L29/161 ,  H01L29/20 ,  H01L29/165 ,  H01L27/02

CPC classification number: H01L29/7848 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823842 ,  H01L21/823871 ,  H01L27/0207 ,  H01L27/092 ,  H01L27/0922 ,  H01L27/0924 ,  H01L29/0642 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/161 ,  H01L29/165 ,  H01L29/20 ,  H01L29/42364 ,  H01L29/42372 ,  H01L29/42376 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/4983 ,  H01L29/51 ,  H01L29/513 ,  H01L29/517

Abstract: A semiconductor device includes a substrate including a first active region, a second active region and a field region between the first and second active regions, and a gate structure formed on the substrate to cross the first active region, the second active region and the field region. The gate structure includes a p type metal gate electrode and an n-type metal gate electrode directly contacting each other, the p-type metal gate electrode extends from the first active region less than half way toward the second active region.

公开(公告)号：US09461173B2

公开(公告)日：2016-10-04

申请号：US14964830

申请日：2015-12-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ju-Youn Kim ,  Hyung-Soon Jang ,  Jong-Mil Youn ,  Tae-Won Ha

IPC: H01L29/78 ,  H01L29/423 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/49 ,  H01L29/51 ,  H01L29/06 ,  H01L29/161 ,  H01L29/20 ,  H01L29/165

CPC classification number: H01L29/7848 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823842 ,  H01L21/823871 ,  H01L27/0207 ,  H01L27/092 ,  H01L27/0922 ,  H01L27/0924 ,  H01L29/0642 ,  H01L29/0649 ,  H01L29/0653 ,  H01L29/161 ,  H01L29/165 ,  H01L29/20 ,  H01L29/42364 ,  H01L29/42372 ,  H01L29/42376 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/4983 ,  H01L29/51 ,  H01L29/513 ,  H01L29/517

Abstract: A semiconductor device includes a substrate including a first active region, a second active region and a field region between the first and second active regions, and a gate structure formed on the substrate to cross the first active region, the second active region and the field region. The gate structure includes a p type metal gate electrode and an n-type metal gate electrode directly contacting each other, the p-type metal gate electrode extends from the first active region less than half way toward the second active region.

Abstract translation: 半导体器件包括：衬底，包括第一有源区，第二有源区和第一有源区和第二有源区之间的场区;以及栅极结构，形成在衬底上以跨过第一有源区，第二有源区和场 地区。 栅极结构包括彼此直接接触的p型金属栅电极和n型金属栅极电极，p型金属栅极电极从第一有源区域延伸到第二有源区域的一半以下。