公开(公告)号：US20180355213A1

公开(公告)日：2018-12-13

申请号：US15883655

申请日：2018-01-30

Applicant: Samsung Electronics Co., Ltd. ,  KCTECH CO., LTD.

Inventor： Seung Ho Park ,  Hyun Goo KONG ,  Jung Hun KIM ,  Sang Mi LEE ,  Woo In LEE ,  Hee Sook CHEON ,  Sang Kyun KIM ,  Hao CUI ,  Jong Hyuk PARK ,  Il Young YOON

IPC: C09G1/02 ,  H01L21/28 ,  H01L27/108 ,  H01L21/321

CPC classification number: C09G1/02 ,  H01L21/28079 ,  H01L21/28123 ,  H01L21/3212 ,  H01L27/10814 ,  H01L27/10823 ,  H01L27/10876

Abstract: A slurry composition for polishing a metal layer and a method for fabricating a semiconductor device using the same are provided. The slurry composition for polishing a metal layer includes polishing particles including a metal oxide, an oxidizer including hydrogen peroxide, and a first polishing regulator including at least one selected from a group consisting of phosphate, phosphite, hypophosphite, and metaphosphate, wherein a content of the oxidizer is 0.01 wt % to 0.09 wt % with respect to 100 wt % of the slurry composition for polishing the metal layer.

公开(公告)号：US20230053379A1

公开(公告)日：2023-02-23

申请号：US17685909

申请日：2022-03-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seung Hoon CHOI ,  Ja Eung KOO ,  Il Young YOON

IPC: H01L29/417 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L29/775 ,  H01L29/40

Abstract: There is provided a semiconductor device capable of improving the performance and reliability of a device. The semiconductor device includes comprising a gate structure including a gate electrode and a gate capping pattern on an upper surface of the gate electrode; a source/drain pattern on at least one side of the gate structure; and a source/drain contact on and connected with an upper surface of the source/drain pattern, the source/drain contact extending along a sidewall of the gate electrode, wherein an upper surface of the source/drain contact includes a convex curved surface.

公开(公告)号：US20180362806A1

公开(公告)日：2018-12-20

申请号：US15822117

申请日：2017-11-25

Applicant: Samsung Electronics Co., Ltd. ,  K.C.TECH CO., LTD

Inventor： Seung Ho PARK ,  Chang Gil Kwon ,  Sung Pyo LEE ,  Jun Ha HWANG ,  Sang Kyun KIM ,  Hye Sung PARK ,  Su Young SHIN ,  Woo In LEE ,  Yang Hee LEE ,  Jong Hyuk PARK ,  Il Young YOON

IPC: C09G1/02 ,  H01L21/3105

Abstract: Provided are a chemical mechanical polishing (CMP) slurry composition and a method of fabricating a semiconductor device using the same. The chemical mechanical polishing (CMP) slurry composition includes abrasive particles, a first cationic compound which comprises at least any one of an amino acid, a polyalkylene glycol, a polymer polysaccharide to which a glucosamine compound is bonded, and a polymer containing an amine group, a second cationic compound which comprises an organic acid, and a nonionic compound which comprises polyetheramine.

公开(公告)号：US20210242215A1

公开(公告)日：2021-08-05

申请号：US17237195

申请日：2021-04-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hye Sung PARK ,  Jong Hyuk PARK ,  Jin Woo BAE ,  Bo Un YOON ,  Il Young YOON ,  Bong Sik CHOI

IPC: H01L27/108 ,  H01L21/027 ,  H01L21/768 ,  H01L23/544

Abstract: A method of manufacturing a semiconductor device includes forming a first pattern structure having a first opening and a second pattern structure having a second opening on a substrate, forming a gap fill layer in the second opening, forming fences and contact structures in the first opening, removing the gap fill layer in the second opening, forming an upper conductive layer to cover the first and second pattern structures, the fences, and the contact structures, forming a mask pattern based on a photolithography process using the second pattern structure covered by the upper conductive layer as an align mark, and etching the upper conductive layer using the mask pattern to form upper conductive patterns. A width of the second opening is larger than a width of a first opening. A thickness of the upper conductive layer is smaller than a depth of the second opening.