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    IMAGE SENSOR
    1.
    发明申请
    IMAGE SENSOR 审中-公开

    公开(公告)号：US20200227452A1

    公开(公告)日：2020-07-16

    申请号：US16458229

    申请日：2019-07-01

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Masaru Ishii ,  Tae-hyoung Kim ,  Min-ho Jang ,  In-sung Joe

    IPC: H01L27/146

    Abstract: An image sensor includes a semiconductor substrate having opposite first and second surfaces, a wiring structure on the first surface of the semiconductor substrate, and a refractive structure on the second surface of the semiconductor substrate. The refractive structure includes a first anti-reflective layer on the second surface of the semiconductor substrate, a refractive pattern on the first anti-reflective layer, an insulation layer on the first anti-reflective layer, and a second anti-reflective layer on the refractive pattern and the insulation layer. The refractive pattern includes first refractive parts spaced apart from each other in a first direction parallel to the second surface of the semiconductor substrate, and the insulation layer fills spaces between the first refractive parts.

    Image sensor
    2.
    发明授权
    Image sensor 有权

    公开(公告)号：US11264414B2

    公开(公告)日：2022-03-01

    申请号：US16458229

    申请日：2019-07-01

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Masaru Ishii ,  Tae-hyoung Kim ,  Min-ho Jang ,  In-sung Joe

    IPC: H01L27/146

    Abstract: An image sensor includes a semiconductor substrate having opposite first and second surfaces, a wiring structure on the first surface of the semiconductor substrate, and a refractive structure on the second surface of the semiconductor substrate. The refractive structure includes a first anti-reflective layer on the second surface of the semiconductor substrate, a refractive pattern on the first anti-reflective layer, an insulation layer on the first anti-reflective layer, and a second anti-reflective layer on the refractive pattern and the insulation layer. The refractive pattern includes first refractive parts spaced apart from each other in a first direction parallel to the second surface of the semiconductor substrate, and the insulation layer fills spaces between the first refractive parts.

    Memory Device And Method Of Storing Data With Error Correction Using Codewords
    3.
    发明申请
    Memory Device And Method Of Storing Data With Error Correction Using Codewords 有权
    使用代码字进行纠错存储数据的存储器件和方法

    公开(公告)号：US20130019143A1

    公开(公告)日：2013-01-17

    申请号：US13625554

    申请日：2012-09-24

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kwang Soo Seol ,  Sung-Il Park ,  Kyoung Lae Cho ,  In-sung Joe

    IPC: H03M13/05

    CPC classification number: H03M13/611 ,  G06F11/1072 ,  G11C7/1006 ,  G11C11/5642 ,  G11C16/26 ,  G11C29/00 ,  H03M13/13 ,  H03M13/15 ,  H03M13/27 ,  H03M13/2732 ,  H03M13/2906 ,  H03M13/3707 ,  H03M13/3715 ,  H03M13/47

    Abstract: Memory devices and/or methods of storing memory data bits are provided. A memory device includes a multi-level cell (MLC) array including a plurality of MLCs, an error correction unit configured to encode data to be recorded in an MLC, where the encoded data is converted to convert the encoded data into a codeword, an error pattern analysis unit configured to analyze a first data pattern included in the codeword corresponding to an error pattern included in the codeword and a data conversion unit configured to convert the analyzed first data pattern into a second data pattern. According to the above memory devices and/or methods, it is possible to efficiently reduce a data error that occurs when the data is stored for a relatively long period of time, thereby improving reliability.

    Abstract translation: 提供了存储器件和/或存储存储器数据位的方法。 存储器件包括包括多个MLC的多电平单元（MLC）阵列，纠错单元，被配置为编码要记录在MLC中的数据，其中编码数据被转换以将编码数据转换为码字， 错误模式分析单元，被配置为分析与包括在码字中的错误模式相对应的码字中包含的第一数据模式;以及数据转换单元，被配置为将分析的第一数据模式转换为第二数据模式。 根据上述存储器件和/或方法，可以有效地减少在数据存储较长时间段时发生的数据错误，从而提高可靠性。

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