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1.发明授权Memory device and method of storing data with error correction using codewords 有权使用码字进行纠错的存储装置和存储数据的方法公开(公告)号：US08543892B2
公开(公告)日：2013-09-24
申请号：US13625554
申请日：2012-09-24
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kwang Soo Seol , Sung-Il Park , Kyoung Lae Cho , In-Sung Joe
IPC: G11C21/00
CPC classification number: H03M13/611 , G06F11/1072 , G11C7/1006 , G11C11/5642 , G11C16/26 , G11C29/00 , H03M13/13 , H03M13/15 , H03M13/27 , H03M13/2732 , H03M13/2906 , H03M13/3707 , H03M13/3715 , H03M13/47
Abstract: Memory devices and/or methods of storing memory data bits are provided. A memory device includes a multi-level cell (MLC) array including a plurality of MLCs, an error correction unit configured to encode data to be recorded in an MLC, where the encoded data is converted to convert the encoded data into a codeword, an error pattern analysis unit configured to analyze a first data pattern included in the codeword corresponding to an error pattern included in the codeword and a data conversion unit configured to convert the analyzed first data pattern into a second data pattern. According to the above memory devices and/or methods, it is possible to efficiently reduce a data error that occurs when the data is stored for a relatively long period of time, thereby improving reliability.
Abstract translation: 提供了存储器件和/或存储存储器数据位的方法。 存储器件包括包括多个MLC的多电平单元（MLC）阵列，纠错单元，被配置为编码要记录在MLC中的数据，其中编码数据被转换以将编码数据转换为码字， 错误模式分析单元，被配置为分析与包括在码字中的错误模式相对应的码字中包含的第一数据模式;以及数据转换单元，被配置为将分析的第一数据模式转换为第二数据模式。 根据上述存储器件和/或方法，可以有效地减少在数据存储较长时间段时发生的数据错误，从而提高可靠性。
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2.发明申请Memory Device And Method Of Storing Data With Error Correction Using Codewords 有权使用代码字进行纠错存储数据的存储器件和方法公开(公告)号：US20130019143A1
公开(公告)日：2013-01-17
申请号：US13625554
申请日：2012-09-24
Applicant: Samsung Electronics Co., Ltd.
Inventor： Kwang Soo Seol , Sung-Il Park , Kyoung Lae Cho , In-sung Joe
IPC: H03M13/05
CPC classification number: H03M13/611 , G06F11/1072 , G11C7/1006 , G11C11/5642 , G11C16/26 , G11C29/00 , H03M13/13 , H03M13/15 , H03M13/27 , H03M13/2732 , H03M13/2906 , H03M13/3707 , H03M13/3715 , H03M13/47
Abstract: Memory devices and/or methods of storing memory data bits are provided. A memory device includes a multi-level cell (MLC) array including a plurality of MLCs, an error correction unit configured to encode data to be recorded in an MLC, where the encoded data is converted to convert the encoded data into a codeword, an error pattern analysis unit configured to analyze a first data pattern included in the codeword corresponding to an error pattern included in the codeword and a data conversion unit configured to convert the analyzed first data pattern into a second data pattern. According to the above memory devices and/or methods, it is possible to efficiently reduce a data error that occurs when the data is stored for a relatively long period of time, thereby improving reliability.
Abstract translation: 提供了存储器件和/或存储存储器数据位的方法。 存储器件包括包括多个MLC的多电平单元（MLC）阵列，纠错单元，被配置为编码要记录在MLC中的数据，其中编码数据被转换以将编码数据转换为码字， 错误模式分析单元，被配置为分析与包括在码字中的错误模式相对应的码字中包含的第一数据模式;以及数据转换单元，被配置为将分析的第一数据模式转换为第二数据模式。 根据上述存储器件和/或方法，可以有效地减少在数据存储较长时间段时发生的数据错误，从而提高可靠性。
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3.发明授权Embedded multimedia card (eMMC), host for controlling eMMC method operating eMMC system 有权嵌入式多媒体卡（eMMC），用于控制eMMC方式操作eMMC系统的主机公开(公告)号：US09146579B2
公开(公告)日：2015-09-29
申请号：US14025886
申请日：2013-09-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jung Pil Lee , Young Gyu Kang , Sung Ho Seo , Myung Sub Shin , Kyung Phil Yoo , Kyoung Lae Cho
Abstract: An embedded multimedia card (eMMC) includes a clock channel receiving a clock from a host, a complementary clock channel receiving a complementary clock from the host, a command/response channel exchanging commands/responses with the host, a plurality of data channels exchanging data between the host and the eMMC, a return clock channel sending a return clock to the host synchronously with data, a complementary return clock channel sending a complementary return clock to the host, and a reference voltage channel that either receives a reference voltage from the host or communicates a reference voltage to the host.
Abstract translation: 嵌入式多媒体卡（eMMC）包括从主机接收时钟的时钟信道，从主机接收互补时钟的补充时钟信道，与主机交换命令/响应的命令/响应信道，多个数据信道交换数据 在主机和eMMC之间，返回时钟信道与数据同步地向主机发送返回时钟，互补返回时钟信道向主机发送互补返回时钟，以及从主机接收参考电压的参考电压信道 或将参考电压传送到主机。
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4.发明授权Non-volatile memory device capable of multi-page programming by simultaneously activating a plurality of selection lines based on programmed data 有权能够通过基于编程数据同时激活多个选择线的能够进行多页编程的非易失性存储器件公开(公告)号：US08873290B2
公开(公告)日：2014-10-28
申请号：US14225601
申请日：2014-03-26
Applicant: SAMSUNG Electronics Co., Ltd
Inventor： Kyoung Lae Cho , Heeseok Eun , Junjin Kong
CPC classification number: G11C16/10 , G11C16/0483 , G11C16/3454 , G11C16/3459
Abstract: A method of programming a non-volatile memory device including a plurality of strings arranged in rows and columns comprises activating all or a part of selection lines in one column at the same time depending upon data to be programmed, driving a bit line corresponding to the one column with a bit line program voltage, and repeating the activating and the driving until bit lines corresponding to the columns are all driven.
Abstract translation: 一种编程包括以行和列排列的多个串的非易失性存储器件的方法包括根据要编程的数据同时激活一列中的一列中的全部或一部分选择线，驱动对应于 具有位线编程电压的一列，并重复激活和驱动，直到与列相对应的位线都被驱动。
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