公开(公告)号：US09431416B2

公开(公告)日：2016-08-30

申请号：US14525361

申请日：2014-10-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Phil-ouk Nam ,  Jun-kyu Yang ,  Hun-hyeong Lim ,  Ki-hyun Hwang ,  Jae-young Ahn ,  Dong-chul Yoo

IPC: H01L21/02 ,  H01L27/115 ,  H01L29/792 ,  H01L29/66

CPC classification number: H01L27/11582 ,  H01L27/11524 ,  H01L27/11575 ,  H01L29/66666 ,  H01L29/66833 ,  H01L29/7926

Abstract: A vertical-type nonvolatile memory device includes a first vertical channel structure, and first and second stacked structure. The first vertical channel structure extends vertically on a substrate. The first stacked structure includes gate electrodes and first interlayer insulating layers. The gate layers and the first interlayer insulating layers are alternately and vertically stacked on each other. The first stacked structure is disposed on a first sidewall of the first vertical channel structure. The second stacked structure includes first sacrificial layers and second interlayer insulating layers. The first sacrificial layers and the second interlayer insulating layers are alternately and vertically stacked on each other. The second stacked structure is disposed on a second sidewall of the first vertical channel structure. The first sacrificial layers is formed of a polysilicon layer.

Abstract translation: 垂直型非易失性存储器件包括第一垂直沟道结构以及第一和第二堆叠结构。 第一垂直通道结构在衬底上垂直延伸。 第一堆叠结构包括栅电极和第一层间绝缘层。 栅极层和第一层间绝缘层彼此交替地和垂直地堆叠。 第一堆叠结构设置在第一垂直通道结构的第一侧壁上。 第二堆叠结构包括第一牺牲层和第二层间绝缘层。 第一牺牲层和第二层间绝缘层彼此交替地和垂直地堆叠。 第二堆叠结构设置在第一垂直通道结构的第二侧壁上。 第一牺牲层由多晶硅层形成。

公开(公告)号：US08901643B2

公开(公告)日：2014-12-02

申请号：US13796394

申请日：2013-03-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Bi-o Kim ,  Jin-tae Noh ,  Chang-woo Sun ,  Jae-young Ahn ,  Seung-hyun Lim ,  Ki-hyun Hwang

IPC: H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119 ,  H01L27/115 ,  H01L29/78 ,  H01L29/423

CPC classification number: H01L29/66666 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582 ,  H01L29/42332 ,  H01L29/7827

Abstract: A semiconductor device includes a channel region extending in a vertical direction perpendicular to a substrate and having a nitrogen concentration distribution, a plurality of gate electrodes arranged on a side wall of the channel region and separated from each other in a vertical direction, and a gate dielectric layer disposed between the channel region and the gate electrodes. The nitrogen concentration distribution has a first concentration near an interface between the channel region and the gate dielectric layer.

Abstract translation: 半导体器件包括：在与衬底垂直的垂直方向上延伸并且具有氮浓度分布的沟道区，布置在沟道区的侧壁上并在垂直方向上彼此分离的多个栅电极和栅极 设置在沟道区和栅电极之间的介电层。 氮浓度分布在沟道区和栅介电层之间的界面附近具有第一浓度。

公开(公告)号：US09343546B2

公开(公告)日：2016-05-17

申请号：US14505571

申请日：2014-10-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Bi-o Kim ,  Jin-tae Noh ,  Chang-woo Sun ,  Jae-young Ahn ,  Seung-hyun Lim ,  Ki-hyun Hwang

IPC: H01L21/8238 ,  H01L29/66 ,  H01L29/78 ,  H01L29/423 ,  H01L27/115

CPC classification number: H01L29/66666 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582 ,  H01L29/42332 ,  H01L29/7827

Abstract: A semiconductor device includes a channel region extending in a vertical direction perpendicular to a substrate and having a nitrogen concentration distribution, a plurality of gate electrodes arranged on a side wall of the channel region and separated from each other in a vertical direction, and a gate dielectric layer disposed between the channel region and the gate electrodes. The nitrogen concentration distribution has a first concentration near an interface between the channel region and the gate dielectric layer.

Abstract translation: 半导体器件包括：在与衬底垂直的垂直方向上延伸并且具有氮浓度分布的沟道区，布置在沟道区的侧壁上并在垂直方向上彼此分离的多个栅电极和栅极 设置在沟道区和栅电极之间的介电层。 氮浓度分布在沟道区和栅介电层之间的界面附近具有第一浓度。

公开(公告)号：US20150056797A1

公开(公告)日：2015-02-26

申请号：US14505571

申请日：2014-10-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Bi-o Kim ,  Jin-tae Noh ,  Chang-woo Sun ,  Jae-young Ahn ,  Seung-hyun Lim ,  Ki-hyun Hwang

IPC: H01L29/66

CPC classification number: H01L29/66666 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11582 ,  H01L29/42332 ,  H01L29/7827

Abstract: A semiconductor device includes a channel region extending in a vertical direction perpendicular to a substrate and having a nitrogen concentration distribution, a plurality of gate electrodes arranged on a side wall of the channel region and separated from each other in a vertical direction, and a gate dielectric layer disposed between the channel region and the gate electrodes. The nitrogen concentration distribution has a first concentration near an interface between the channel region and the gate dielectric layer.

Abstract translation: 半导体器件包括：在与衬底垂直的垂直方向上延伸并且具有氮浓度分布的沟道区，布置在沟道区的侧壁上并在垂直方向上彼此分离的多个栅电极和栅极 设置在沟道区和栅电极之间的介电层。 氮浓度分布在沟道区和栅介电层之间的界面附近具有第一浓度。