Etching apparatus
    4.
    发明授权

    公开(公告)号:US11515193B2

    公开(公告)日:2022-11-29

    申请号:US16901228

    申请日:2020-06-15

    Abstract: An etching apparatus includes a reaction chamber having an internal space; an upper electrode in the reaction chamber; a fixing chuck in the internal space of the reaction chamber and below the upper electrode; an electrostatic chuck above the fixing chuck and on which a wafer is configured to be placed; a focus ring surrounding the electrostatic chuck; and a plurality of sealing members configured to seal cooling gas provided to the focus ring and being in contact with the focus ring. The plurality of sealing members may be formed of a porous material. Each of the plurality of sealing members may include a body portion and an outer surface surrounding the body portion. Only the body portion may include voids and the outer surface may be smooth and free of voids.

    Substrate processing apparatus and method of manufacturing semiconductor device using the same

    公开(公告)号:US12183555B2

    公开(公告)日:2024-12-31

    申请号:US17981874

    申请日:2022-11-07

    Abstract: Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device using the same. The substrate processing apparatus includes a lower electrode assembly, an upper electrode assembly disposed on the lower electrode assembly, and a plasma processing region between the lower electrode assembly and the upper electrode assembly. The lower electrode assembly includes a substrate support supporting a substrate, a coupling ring assembly surrounding the substrate support, an edge ring on the coupling ring assembly, and at least one upper contact pad contacting a lower surface of the edge ring and contacting at least one of the substrate support and the coupling ring assembly, the at least one upper contact pad being conductive. The coupling ring assembly includes a coupling ring and a conductive side contact pad in contact with a side surface of the substrate support and an inner surface of the coupling ring.

    SUBSTRATE PROCESSING APPARATUS AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME

    公开(公告)号:US20230143049A1

    公开(公告)日:2023-05-11

    申请号:US17981874

    申请日:2022-11-07

    CPC classification number: H01J37/32642 H01J37/32532

    Abstract: Provided are a substrate processing apparatus and a method of manufacturing a semiconductor device using the same. The substrate processing apparatus includes a lower electrode assembly, an upper electrode assembly disposed on the lower electrode assembly, and a plasma processing region between the lower electrode assembly and the upper electrode assembly. The lower electrode assembly includes a substrate support supporting a substrate, a coupling ring assembly surrounding the substrate support, an edge ring on the coupling ring assembly, and at least one upper contact pad contacting a lower surface of the edge ring and contacting at least one of the substrate support and the coupling ring assembly, the at least one upper contact pad being conductive. The coupling ring assembly includes a coupling ring and a conductive side contact pad in contact with a side surface of the substrate support and an inner surface of the coupling ring.

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