公开(公告)号：US12094508B1

公开(公告)日：2024-09-17

申请号：US18509818

申请日：2023-11-15

Applicant: Samsung Electronics Co., Ltd. ,  INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： See-Hun Yang ,  Mahesh Govind Samant ,  Panagiotis Charilaos Filippou ,  Chirag Garg ,  Fnu Ikhtiar ,  Jaewoo Jeong

IPC: G11C11/16 ,  H01F10/32 ,  H10B61/00 ,  H10N50/01 ,  H10N50/10 ,  H10N50/85

CPC classification number: G11C11/161 ,  H01F10/329 ,  H10B61/00 ,  H10N50/01 ,  H10N50/10 ,  H10N50/85

Abstract: Methods and apparatuses are provided for MRAM devices utilizing spin transfer torque. A device includes a substrate; an MTJ formed over the substrate, the MTJ including a reference layer, a tunnel barrier layer, and a free layer; and a PSM layer formed over the free layer of the MTJ. The PSM layer, i.e., a chiral material layer, may be formed adject to a free layer (or adjacent to a TBL, which is adjacent to the free layer) of the MTJ, providing an additional source of spin-transfer-torque, and providing MTJ devices that are operable with lower switching current.

公开(公告)号：US20240349619A1

公开(公告)日：2024-10-17

申请号：US18218920

申请日：2023-07-06

Applicant: Samsung Electronics Co., Ltd. ,  International Business Machines Corporation

Inventor： Jaewoo Jeong ,  Tiar Ikhtiar ,  Panagiotis Charilaos Filippou ,  Chirag Garg ,  See-Hun Yang ,  Mahesh Govind Samant

IPC: H10N50/80 ,  H01F10/32 ,  H10B61/00 ,  H10N50/01 ,  H10N50/20 ,  H10N50/85

CPC classification number: H10N50/80 ,  H01F10/3254 ,  H01F10/3272 ,  H10B61/00 ,  H10N50/01 ,  H10N50/20 ,  H10N50/85

Abstract: A magnetic memory device includes a substrate, a thermally stable nitride seed layer substantially oriented in a (001) direction above the substrate, a chemical templating layer above the thermally stable nitride seed layer, and a magnetic layer above the chemical templating layer. The chemical templating layer includes a binary alloy having a CsCl prototype structure, and the magnetic layer includes a Heusler compound having perpendicular magnetic anisotropy (PMA).

公开(公告)号：US20240347089A1

公开(公告)日：2024-10-17

申请号：US18348087

申请日：2023-07-06

Applicant: Samsung Electronics Co., Ltd. ,  International Business Machines Corporation

Inventor： Jaewoo Jeong ,  Tiar Ikhtiar ,  Panagiotis Charilaos Filippou ,  Chirag Garg ,  Mahesh Govind Samant

IPC: G11C11/16 ,  H01F10/32 ,  H10B61/00 ,  H10N50/01 ,  H10N50/10 ,  H10N50/85

CPC classification number: G11C11/161 ,  H01F10/3272 ,  H01F10/3286 ,  H10B61/00 ,  H10N50/01 ,  H10N50/10 ,  H10N50/85

Abstract: A magnetic random-access memory (MRAM) device includes a substrate, a bottom magnetic reference layer on the substrate, a tunnel barrier layer above the bottom magnetic reference layer, and a top magnetic free layer above the tunnel barrier layer. The top magnetic free layer includes a chemical templating layer on the tunnel barrier layer and a magnetic layer on the chemical templating layer. The chemical templating layer includes a binary alloy of FeyX which may have a BiF3 prototype structure in which y is in a range from 0.9 to 3.3, and the magnetic layer includes a Heusler compound having substantially perpendicular magnetic anisotropy.

公开(公告)号：US20240349622A1

公开(公告)日：2024-10-17

申请号：US18218926

申请日：2023-07-06

Applicant: Samsung Electronics Co., Ltd. ,  International Business Machines Corporation

Inventor： Jaewoo Jeong ,  Tiar Ikhtiar ,  Panagiotis Charilaos Filippou ,  Chirag Garg ,  Mahesh Govind Samant

IPC: H10N50/85 ,  H10B61/00 ,  H10N50/01 ,  H10N50/10

CPC classification number: H10N50/85 ,  H10B61/00 ,  H10N50/01 ,  H10N50/10

Abstract: A magnetic memory device includes a substrate, a seed layer above the substrate, a chemical templating layer above the seed layer, and a first magnetic layer above the chemical templating layer. The seed layer includes ScxN, MnxN, or MgO substantially oriented in (001) direction. The chemical templating layer includes a binary alloy having a Cu3Au prototype structure or a BiF3 prototype structure. The first magnetic layer includes a Heusler compound having perpendicular magnetic anisotropy.

公开(公告)号：US09825217B1

公开(公告)日：2017-11-21

申请号：US15360221

申请日：2016-11-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woojin Kim ,  Keewon Kim ,  S. P. Stuart Parkin ,  Jaewoo Jeong ,  Mahesh Govind Samant

IPC: H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01F10/32 ,  H01L43/12

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01F10/3218 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Example embodiments relate to magnetic memory devices and methods for manufacturing the same. The magnetic memory device includes a magnetic tunnel junction layer including a first magnetic layer, a second magnetic layer, and a first tunnel barrier layer between the first and second magnetic layers. The second magnetic layer is disposed on the first tunnel barrier layer and is in direct contact with the first tunnel barrier layer. The second magnetic layer includes cobalt-iron-beryllium (CoFeBe). A beryllium content of CoFeBe in the second magnetic layer ranges from about 2 at % to about 15 at %.

公开(公告)号：US09761793B1

公开(公告)日：2017-09-12

申请号：US15157717

申请日：2016-05-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woojin Kim ,  Keewon Kim ,  Jaewoo Jeong ,  Stuart S. P. Parkin ,  Mahesh Govind Samant

IPC: H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L27/22 ,  G11C11/16

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/222 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: Example embodiments relate to a magnetic memory device that includes a magnetic tunnel junction layer including a first magnetic layer, a second magnetic layer, and a first tunnel barrier layer between the first and second magnetic layers. The second magnetic layer is disposed on the first tunnel barrier layer and is in direct contact with the first tunnel barrier layer. The second magnetic layer includes cobalt-iron-beryllium (CoFeBe). A beryllium content of CoFeBe in the second magnetic layer ranges from about 2 at % to about 10 at %.