公开(公告)号：US20220352470A1

公开(公告)日：2022-11-03

申请号：US17471474

申请日：2021-09-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Haengdeog KOH ,  Hajin KIM ,  Moonil JUNG

IPC: H01L51/00 ,  H01L51/05 ,  H01L29/06 ,  C01B32/16

Abstract: A method of preparing a carbon nanotube monolayer film includes applying a bifunctional hydrogen-bond linker onto a substrate to prepare a surface-treated substrate, mixing carbon nanotubes having a heteroatom-containing aromatic polymer coating film with a hydrophobic solvent to obtain a composition and contacting the surface-treated substrate with the composition, and heat-treating the surface-treated substrate contacting the composition.

公开(公告)号：US20240120403A1

公开(公告)日：2024-04-11

申请号：US18481444

申请日：2023-10-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeeeun YANG ,  Sangwook KIM ,  Euntae KIM ,  Kwanghee LEE ,  Moonil JUNG

IPC: H01L29/45 ,  H01L21/02 ,  H01L21/443 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L29/45 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/443 ,  H01L29/66969 ,  H01L29/78642 ,  H01L29/7869 ,  H01L29/78696

Abstract: Provided are a semiconductor device and a method of manufacturing the same. The semiconductor device includes a lower electrode on a substrate, a metal oxide on the lower electrode, a buffer on the metal oxide, an oxide channel in the buffer, a gate insulating layer in the oxide channel, a gate electrode in the gate insulating layer, and an upper electrode on the gate electrode, and the buffer may include a silicide material.

公开(公告)号：US20200342894A1

公开(公告)日：2020-10-29

申请号：US16715721

申请日：2019-12-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Boreum JEONG ,  Wontaek SEO ,  Youngtek OH ,  Yunju YU ,  Moonil JUNG

IPC: G10L25/51 ,  G10L21/0272 ,  G10L15/22

Abstract: Provided is a sound source tracking apparatuses including a vibration unit including vibrators configured to vibrate in response to an ambient sound, the ambient sound including individual sounds, and a processor configured to separate the ambient sound into individual sounds, to determine a target individual sound having a target tone color among the individual sounds, and to obtain a relative location of a target sound source that generates the target individual sound.

公开(公告)号：US20240215215A1

公开(公告)日：2024-06-27

申请号：US18534220

申请日：2023-12-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangwook KIM ,  Kwanghee LEE ,  Jeeeun YANG ,  Moonil JUNG ,  Euntae KIM ,  Youngkwan CHA

IPC: H10B12/00

CPC classification number: H10B12/00

Abstract: A memory device includes a read word line on a substrate, a first channel extending along a plane perpendicular to an upper surface of the substrate, a second channel facing the first channel in parallel, a first gate insulation layer adjacent to the first channel between the first channel and the second channel, a second gate insulation layer adjacent to the second channel between the first channel and the second channel, a gate electrode adjacent to the first gate insulation layer between the first gate insulation layer and the second gate insulation layer, a write word line adjacent to the second gate insulation layer between the first gate insulation layer and the second gate insulation layer, a read bit line electrically connected to the first channel, and a write bit line electrically connected to the second channel.

公开(公告)号：US20240120421A1

公开(公告)日：2024-04-11

申请号：US18479428

申请日：2023-10-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeeeun YANG ,  Sangwook KIM ,  Euntae KIM ,  Kwanghee LEE ,  Moonil JUNG

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/42384 ,  H01L29/66742

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a lower electrode provided on a substrate, a buffer layer provided on the lower electrode and including first indium, an oxide semiconductor layer provided on the buffer layer and including second indium, a gate electrode provided apart from the oxide semiconductor layer, and an upper electrode provided on the oxide semiconductor layer, wherein a content of the first indium is greater than a content of the second indium.

公开(公告)号：US20240222515A1

公开(公告)日：2024-07-04

申请号：US18398912

申请日：2023-12-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeeeun YANG ,  Yongsung KIM ,  Sangwook KIM ,  Kwanghee LEE ,  Moonil JUNG

IPC: H01L29/786 ,  H01L29/423 ,  H10B10/00

CPC classification number: H01L29/7869 ,  H01L29/42392 ,  H10B10/12

Abstract: Provided are a semiconductor device including an oxide semiconductor layer and an electronic device including the semiconductor device. The semiconductor device includes a substrate, a first electrode provided on the substrate, a second electrode provided on the first electrode, an oxide semiconductor layer provided between the first electrode and the second electrode, a gate electrode provided in a thickness direction of the oxide semiconductor layer, and a gate insulating layer provided between the oxide semiconductor layer and the gate electrode, wherein a measurement density relative to a theoretical density of the oxide semiconductor layer is about 90% or more. The oxide semiconductor layer of the semiconductor device may have a more uniform and improved film density, and may improve the reliability of the device due to the improved film density.

公开(公告)号：US20240162350A1

公开(公告)日：2024-05-16

申请号：US18496353

申请日：2023-10-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Moonil JUNG ,  Sangwook KIM ,  Euntae KIM ,  Jeeeun YANG ,  Kwanghee LEE ,  Youngkwan CHA

IPC: H01L29/786 ,  H01L29/10 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L29/1054 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78696

Abstract: Semiconductor devices and manufacturing methods thereof are provided. A semiconductor device includes a substrate, a lower electrode on the substrate, an oxide channel on the lower electrode, the oxide channel including vertical extension portions extending in a first direction perpendicular to the substrate, an upper electrode on the oxide channel, a gate insulator on a portion the oxide channel that is exposed by the lower electrode and the upper electrode, and a gate electrode on the gate insulator, wherein the upper electrode and the lower electrode are separated from each other by the oxide channel in the first direction, and the oxide channel is doped with ions.

公开(公告)号：US20240079468A1

公开(公告)日：2024-03-07

申请号：US18457803

申请日：2023-08-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Moonil JUNG ,  Sangwook KIM ,  Euntae KIM ,  Jeeeun YANG ,  Kwanghee LEE

IPC: H01L29/45 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L29/45 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78642 ,  H01L29/7869 ,  H01L21/02491 ,  H01L29/78696

Abstract: Provided are a vertical transistor and a method of manufacturing the same. The vertical transistor includes a substrate, a lower electrode on the substrate and including a metal material, a carbon thin film being conductive and on the lower electrode, an oxide semiconductor layer on the carbon thin film, a gate electrode apart from the oxide semiconductor layer, a gate insulating layer arranged between the oxide semiconductor layer and the gate electrode, and an upper electrode on the oxide semiconductor layer, wherein the lower electrode. The carbon thin film, the oxide semiconductor layer, and the upper electrode are arranged in a direction perpendicular to the substrate.

公开(公告)号：US20230051857A1

公开(公告)日：2023-02-16

申请号：US17540662

申请日：2021-12-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwanghee LEE ,  Sangwook KIM ,  Euntae KIM ,  Jeeeun YANG ,  Moonil JUNG ,  Sangjun HONG

IPC: H01L29/786 ,  H01L29/417

Abstract: Provided are oxide semiconductor transistors. The oxide semiconductor transistor includes a substrate, a channel layer arranged on the substrate and having a flat plate shape extending along one plane, a gate electrode facing a part of the channel layer, and a source region and a drain region separated from each other with the gate electrode therebetween, wherein the source region contacts three or more surfaces of the channel layer, and the drain region contacts three or more surfaces of the channel layer.

公开(公告)号：US20210148757A1

公开(公告)日：2021-05-20

申请号：US17159900

申请日：2021-01-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jineun KIM ,  Younggeun ROH ,  Yeonsang PARK ,  Hyochul KIM ,  Moonil JUNG

IPC: G01J3/18 ,  G01J3/45 ,  G02B5/28 ,  G01J3/26 ,  G02B5/20 ,  G01J3/28 ,  G01J3/02

Abstract: A light filter and a spectrometer including the light filter are disclosed. The light filter includes a plurality of filter units having different resonance wavelengths, wherein each of the plurality of filter units includes a cavity layer configured to output light of constructive interference, a Bragg reflection layer provided on a first surface of the cavity layer, and a pattern reflection layer provided on a second surface of the cavity layer opposite to the first surface and configured to cause guided mode resonance of light incident on the pattern reflection layer, the pattern reflection layer including a plurality of reflection structures that are periodically arranged.