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公开(公告)号：US20240120403A1
公开(公告)日：2024-04-11
申请号：US18481444
申请日：2023-10-05
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jeeeun YANG , Sangwook KIM , Euntae KIM , Kwanghee LEE , Moonil JUNG
IPC: H01L29/45 , H01L21/02 , H01L21/443 , H01L29/66 , H01L29/786
CPC classification number: H01L29/45 , H01L21/02565 , H01L21/0262 , H01L21/443 , H01L29/66969 , H01L29/78642 , H01L29/7869 , H01L29/78696
Abstract: Provided are a semiconductor device and a method of manufacturing the same. The semiconductor device includes a lower electrode on a substrate, a metal oxide on the lower electrode, a buffer on the metal oxide, an oxide channel in the buffer, a gate insulating layer in the oxide channel, a gate electrode in the gate insulating layer, and an upper electrode on the gate electrode, and the buffer may include a silicide material.
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公开(公告)号：US20250006844A1
公开(公告)日：2025-01-02
申请号：US18756169
申请日：2024-06-27
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jeeeun YANG , Sangwook KIM , Youngkwan CHA
IPC: H01L29/786 , H01L27/118 , H01L29/66 , H10B10/00
Abstract: A semiconductor device includes an oxide semiconductor layer, a first electrode and a second electrode, which are arranged apart from each other on the oxide semiconductor layer, a metal oxide layer arranged between the oxide semiconductor layer and at least one of the first electrode and the second electrode, and a metal nitride layer arranged between the metal oxide layer and the oxide semiconductor layer.
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公开(公告)号：US20170155151A1
公开(公告)日：2017-06-01
申请号：US15356932
申请日：2016-11-21
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Woojin BAE , Seunguk KWON , Jeeeun YANG
CPC classification number: H01M4/622 , C08G73/105 , C08G73/1071 , H01M4/0471 , H01M4/139 , H01M4/362 , H01M4/386 , H01M4/587
Abstract: A water-soluble partially lithiated polyamic acid having an acid equivalent of less than 300 grams per equivalent and a degree of lithium ion substitution of from about 0.2 equivalents to about 1.0 equivalent with respect to carboxylic acid groups, which is a product of a polyamic acid and lithium hydroxide.
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4.发明公开公开(公告)号：US20240215215A1
公开(公告)日：2024-06-27
申请号：US18534220
申请日：2023-12-08
Applicant: Samsung Electronics Co., Ltd.
Inventor： Sangwook KIM , Kwanghee LEE , Jeeeun YANG , Moonil JUNG , Euntae KIM , Youngkwan CHA
IPC: H10B12/00
CPC classification number: H10B12/00
Abstract: A memory device includes a read word line on a substrate, a first channel extending along a plane perpendicular to an upper surface of the substrate, a second channel facing the first channel in parallel, a first gate insulation layer adjacent to the first channel between the first channel and the second channel, a second gate insulation layer adjacent to the second channel between the first channel and the second channel, a gate electrode adjacent to the first gate insulation layer between the first gate insulation layer and the second gate insulation layer, a write word line adjacent to the second gate insulation layer between the first gate insulation layer and the second gate insulation layer, a read bit line electrically connected to the first channel, and a write bit line electrically connected to the second channel.
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公开(公告)号：US20240120421A1
公开(公告)日：2024-04-11
申请号：US18479428
申请日：2023-10-02
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jeeeun YANG , Sangwook KIM , Euntae KIM , Kwanghee LEE , Moonil JUNG
IPC: H01L29/786 , H01L29/423 , H01L29/66
CPC classification number: H01L29/7869 , H01L29/42384 , H01L29/66742
Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a lower electrode provided on a substrate, a buffer layer provided on the lower electrode and including first indium, an oxide semiconductor layer provided on the buffer layer and including second indium, a gate electrode provided apart from the oxide semiconductor layer, and an upper electrode provided on the oxide semiconductor layer, wherein a content of the first indium is greater than a content of the second indium.
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Patent Agency Ranking
6.发明申请COMPOSITE ANODE ACTIVE MATERIAL, METHOD OF PREPARING THE SAME, AND ANODE AND LITHIUM SECONDARY BATTERY INCLUDING THE COMPOSITE ANODE ACTIVE MATERIAL 审中-公开复合阳极活性材料，其制备方法，阳极和锂二次电池，包括复合阳极活性材料公开(公告)号：US20160190568A1
公开(公告)日：2016-06-30
申请号：US14985544
申请日：2015-12-31
Applicant: Samsung Electronics Co., Ltd. , Samsung SDI Co., Ltd.
Inventor： Jeeeun YANG , Heechul JUNG , Jinsoo MUN
IPC: H01M4/36 , H01M10/0525 , H01M4/38 , H01M4/42 , H01M4/46
Abstract: A composite anode active material includes a metal silicide core, a silicon shell, and a metal nitride and a carbon material that are dispersed in at least one surface of the silicon shell.
Abstract translation: 复合阳极活性材料包括分散在硅壳的至少一个表面中的金属硅化物芯，硅壳以及金属氮化物和碳材料。
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公开(公告)号：US20250006778A1
公开(公告)日：2025-01-02
申请号：US18510973
申请日：2023-11-16
Applicant: Samsung Electronics Co., Ltd.
Inventor： Haeryong KIM , Eunae CHO , Beomseok KIM , Jeeeun YANG , Jooho LEE
Abstract: A capacitor includes a first electrode, a second electrode spaced apart from the first electrode, a dielectric layer arranged between the first electrode and the second electrode, and an interface layer arranged between the second electrode and the dielectric layer, wherein the interface layer includes a first element, a second element, and a third element, the first element includes aluminum (Al), the second element includes gallium (Ga), and the third element includes oxygen (O).
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8.发明申请公开(公告)号：US20180026270A1
公开(公告)日：2018-01-25
申请号：US15656476
申请日：2017-07-21
Applicant: SAMSUNG ELECTRONICS CO., LTD. , Samsung SDI Co., Ltd.
Inventor： Woojin BAE , Seunguk KWON , Sangkook MAH , Jeeeun YANG , Dukhyoung YOON , Sungsoo HAN
IPC: H01M4/62 , C08L87/00 , H01M4/36 , H01M10/0568 , H01M4/587 , H01M6/16 , H01M10/0569 , C08G81/02 , H01M4/38
CPC classification number: H01M4/622 , C08G73/1042 , C08G73/1071 , C08G81/027 , C08G81/028 , C08L87/00 , C08L87/005 , H01M4/364 , H01M4/366 , H01M4/382 , H01M4/386 , H01M4/587 , H01M4/606 , H01M6/164 , H01M6/166 , H01M6/168 , H01M10/0567 , H01M10/0568 , H01M10/0569 , H01M2300/004
Abstract: A binder includes a third polymer including a cross-linked product of a first polymer and a second polymer, wherein the first polymer includes a first functional group and is at least one selected from a polyamic acid and a polyimide, wherein the second polymer includes a second functional group and is water-soluble, and wherein the first polymer and the second polymer are cross-linked by an ester bond formed by a reaction of the first functional group and the second functional.
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9.发明申请COMPOSITE ANODE ACTIVE MATERIAL, METHOD OF PREPARING THE SAME, AND ANODE AND LITHIUM SECONDARY BATTERY INCLUDING THE COMPOSITE ANODE ACTIVE MATERIAL 审中-公开复合阳极活性材料，其制备方法，阳极和锂二次电池，包括复合阳极活性材料公开(公告)号：US20160190548A1
公开(公告)日：2016-06-30
申请号：US14982790
申请日：2015-12-29
Applicant: Samsung Electronics Co., Ltd. , Samsung SDI Co., Ltd.
Inventor： Jeeeun YANG
IPC: H01M4/134 , H01M10/0525 , H01M4/62 , H01M4/04 , H01M4/1395 , H01M4/38
CPC classification number: H01M4/134 , H01M4/0402 , H01M4/1395 , H01M4/366 , H01M4/386 , H01M4/622 , H01M10/052 , H01M2004/027 , Y02T10/7011
Abstract: A composite anode active material including: a silicon material and a coating layer formed on at least a portion of a surface of the silicon material, wherein the coating layer is chemically bonded to the silicon material, and wherein the coating layer includes a hydrosilylation product of a C4-C30 alkene having a terminal —C(═O)OR group, wherein R is a hydrogen, a C1-C5 alkyl group, a C2-C6 heteroalkyl group, a C6-C12 aryl group, or a C7-C13 arylalkyl group, each of which except hydrogen is substituted or unsubstituted.
Abstract translation: 一种复合阳极活性材料，包括：硅材料和形成在所述硅材料的表面的至少一部分上的涂层，其中所述涂层与所述硅材料化学键合，并且其中所述涂层包括硅烷化产物 具有末端-C（= O）OR基团的C 4 -C 30烯烃，其中R是氢，C 1 -C 5烷基，C 2 -C 6杂烷基，C 6 -C 12芳基或C 7 -C 13芳基烷基 基团，其中除氢以外的每一个是取代的或未取代的。
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公开(公告)号：US20240234557A1
公开(公告)日：2024-07-11
申请号：US18515102
申请日：2023-11-20
Applicant: Samsung Electronics Co., Ltd.
Inventor： Minsu SEOL , Jeeeun YANG , Sangwook KIM , Kyung-Eun BYUN , Eunkyu LEE
IPC: H01L29/76 , H01L21/02 , H01L29/24 , H01L29/423 , H01L29/66
CPC classification number: H01L29/7606 , H01L21/02568 , H01L29/24 , H01L29/4236 , H01L29/66969
Abstract: Disclosed are a semiconductor device, a method of manufacturing the same, and an electronic element and an electronic apparatus each including the semiconductor device. The semiconductor device may include a substrate, a channel layer on the substrate, a first electrode and a second electrode on two opposite ends of the channel layer, respectively, and spaced apart from each other, a gate electrode on the channel layer and spaced apart from the first electrode and the second electrode, a gate dielectric material provided between the channel layer and the gate electrode, and a chalcogen compound layer being at least one of between the gate dielectric material and the channel layer, between the first electrode and the channel layer, and between the second electrode and the channel layer.
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