公开(公告)号：US20130307007A1

公开(公告)日：2013-11-21

申请号：US13896166

申请日：2013-05-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Young CHOI ,  Jae Ho HAN ,  Ki Seok KIM ,  Wan Ho LEE ,  Myeong Ha KIM ,  Hae Soo HA

IPC: H01L33/40

CPC classification number: H01L33/405 ,  H01L33/145 ,  H01L33/42

Abstract: A light emitting device includes a first semiconductor layer, an active layer, and a second semiconductor layer, and first and second electrodes electrically connected to the first and second semiconductor layers, respectively. The second electrode includes a reflective pad portion, a transparent electrode layer, a reflective finger portion and an electrode pad portion. The reflective pad portion is disposed in a region of an upper surface of the second semiconductor layer. The transparent electrode layer is disposed on the second semiconductor layer and has an opening encompassing the reflective pad portion such that the transparent electrode layer is not in contact with the reflective pad portion. The reflective finger portion extends from the reflective pad portion and has at least a portion thereof disposed on the transparent electrode layer. The electrode pad portion covers the reflective pad portion to be in contact with the transparent electrode layer.

Abstract translation: 发光器件包括第一半导体层，有源层和第二半导体层，以及分别与第一和第二半导体层电连接的第一和第二电极。 第二电极包括反射焊盘部分，透明电极层，反射指状部分和电极焊盘部分。 反射焊盘部分设置在第二半导体层的上表面的区域中。 透明电极层设置在第二半导体层上，并且具有包围反射焊盘部分的开口，使得透明电极层不与反射焊盘部分接触。 反射指部从反射板部延伸，并且其至少一部分设置在透明电极层上。 电极焊盘部分覆盖与透明电极层接触的反射焊盘部分。

公开(公告)号：US20170005242A1

公开(公告)日：2017-01-05

申请号：US15138326

申请日：2016-04-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myeong Ha KIM ,  Sang Yeob SONG ,  Chan Mook LIM

IPC: H01L33/50 ,  H01L33/32 ,  H01L33/46 ,  H01L33/06

CPC classification number: H01L33/46 ,  F21K9/23 ,  F21K9/27 ,  F21V23/005 ,  F21Y2103/10 ,  F21Y2105/10 ,  F21Y2115/10 ,  H01L33/08 ,  H01L33/24 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: A semiconductor light emitting device may include a substrate having a first surface and a second surface, the second surface being opposite to the first surface; a light emitting structure disposed on the first surface of the substrate and including a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer; and a reflector disposed on the second surface of the substrate and including a low refractive index layer and a Bragg layer, wherein the Bragg layer includes a plurality of alternately stacked layers having different refractive indices, and wherein a refractive index of the low refractive index layer is lower than a refractive index of the Bragg layer.

Abstract translation: 半导体发光器件可以包括具有第一表面和第二表面的衬底，第二表面与第一表面相对; 发光结构，其设置在所述基板的所述第一表面上，并且包括第一导电型半导体层，有源层和第二导电型半导体层; 以及设置在所述基板的所述第二表面上并且包括低折射率层和布拉格层的反射器，其中所述布拉格层包括具有不同折射率的多个交替堆叠的层，并且其中所述低折射率层的折射率 低于布拉格层的折射率。

公开(公告)号：US20160087159A1

公开(公告)日：2016-03-24

申请号：US14720698

申请日：2015-05-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myeong Ha KIM ,  Chan Mook LIM ,  Masaaki SOFUE ,  Sang Yeob SONG ,  Mi Jeong YUN

IPC: H01L33/46 ,  H01L33/44

CPC classification number: H01L33/46 ,  H01L33/50 ,  H01L2224/1403 ,  H01L2224/16225 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012

Abstract: A semiconductor light-emitting device includes a light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, and a selective transmission-reflection layer disposed on the light-emitting structure and including a plurality of dielectric layers having different optical thicknesses alternately stacked at least once. The sum of an optical thickness of a dielectric layer having a maximum optical thickness and an optical thickness of a dielectric layer having a minimum optical thickness is in the range of 0.75 to 0.80.

Abstract translation: 一种半导体发光器件包括包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构以及设置在发光结构上的选择性透射反射层，并且包括 具有交替层叠至少一次的具有不同光学厚度的多个电介质层。 具有最大光学厚度和具有最小光学厚度的介电层的光学厚度的介电层的光学厚度的总和在0.75至0.80的范围内。

公开(公告)号：US20150087096A1

公开(公告)日：2015-03-26

申请号：US14285102

申请日：2014-05-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae Ho HAN ,  Myeong Ha KIM

IPC: H01L33/42 ,  H01L33/40

CPC classification number: H01L33/42 ,  F21K9/232 ,  F21K9/27 ,  F21K9/90 ,  F21S41/143 ,  F21S45/47 ,  F21Y2115/10 ,  H01L31/02366 ,  H01L33/22 ,  H01L33/405 ,  H01L2224/48091 ,  H01L2224/48237 ,  H01L2224/48257 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A method of manufacturing a semiconductor light emitting device is performed on a light emitting structure including a sequential stack of a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. The second conductivity-type semiconductor layer and the active layer are mesa-etched to expose a portion of the first conductivity-type semiconductor layer therethrough. A conductive layer is formed on the second conductivity-type semiconductor layer and the portion of the first conductivity-type semiconductor layer exposed by mesa-etching. In turn, the conductive layer is dry etched such that an upper surface of the first conductivity-type semiconductor layer is partially etched to have uneven portions formed thereon. The resulting semiconductor light emitting device has improved external light extraction efficiency while being easily manufactured.

Abstract translation: 对包括第一导电类型半导体层，有源层和第二导电类型半导体层的顺序堆叠的发光结构进行半导体发光器件的制造方法。 对第二导电型半导体层和有源层进行台面蚀刻，以使第一导电型半导体层的一部分透过。 在第二导电型半导体层上形成导电层，通过台面蚀刻形成第一导电型半导体层的部分。 接着，对导电层进行干蚀刻，使得第一导电型半导体层的上表面被部分地蚀刻以形成在其上的不平坦部分。 所得到的半导体发光器件在容易制造的同时具有改善的外部光提取效率。