公开(公告)号：US20180266017A1

公开(公告)日：2018-09-20

申请号：US15664294

申请日：2017-07-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： KEUM SEOK PARK ,  SUNJUNG KIM ,  YIHWAN KIM

IPC: C30B33/12 ,  C30B25/12 ,  C30B25/14 ,  C30B31/16 ,  C30B31/14 ,  H01L21/02

CPC classification number: C30B33/12 ,  C30B25/12 ,  C30B25/14 ,  C30B31/14 ,  C30B31/16 ,  H01L21/02057 ,  H01L21/02532 ,  H01L21/0257 ,  H01L21/0262 ,  H01L29/66545 ,  H01L29/66636

Abstract: Disclosed is a substrate treating apparatus comprising a wafer chuck on which a substrate is placed, an injector unit on a side of the wafer chuck and injecting process gases that include a first gas and a second gas, and a gas supply unit supplying the process gases to the injector unit. The gas supply unit comprises first and second gas supply sources that respectively accommodate the first and second gases, first and second gas supply lines that respectively connect the first and second gas supply sources to the injector unit, and first and second heating units that are respectively disposed on the first and second gas supply lines. The first heating units disposed on the first gas supply line have a density per unit length greater than the density per unit length of the second heating units disposed on the second gas supply line.

公开(公告)号：US20180122922A1

公开(公告)日：2018-05-03

申请号：US15800242

申请日：2017-11-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： SEOKHOON KIM ,  WOO BIN SONG ,  SUNJUNG KIM ,  JinBum KIM ,  SANGMOON LEE ,  SEUNG HUN LEE ,  DONGSUK SHIN

IPC: H01L29/66 ,  H01L29/423 ,  H01L29/78 ,  H01L21/762 ,  H01L23/31

CPC classification number: H01L29/66795 ,  H01L21/76224 ,  H01L23/3171 ,  H01L29/16 ,  H01L29/20 ,  H01L29/267 ,  H01L29/42364 ,  H01L29/785 ,  H01L29/7851

Abstract: Disclosed is a semiconductor device. The semiconductor device comprises a fin structure on a substrate, device isolation patterns provided on the substrate and disposed on opposite sides of the fin structure, a gate electrode running across the fin structure and the device isolation patterns, a gate dielectric pattern between the gate electrode and the fin structure and between the gate electrode and the device isolation patterns, and a capping layer between the substrate and the device isolation patterns and between the fin structure and the device isolation patterns. The capping layer has a thickness greater than a thickness of the gate dielectric pattern.

公开(公告)号：US20160315193A1

公开(公告)日：2016-10-27

申请号：US15138914

申请日：2016-04-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： DONGWOO KIM ,  SEUNGHUN LEE ,  SUNJUNG KIM ,  HYUNJUNG LEE ,  BONYOUNG KOO

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/165 ,  H01L29/08 ,  H01L29/161

CPC classification number: H01L29/7848 ,  H01L29/0847 ,  H01L29/165 ,  H01L29/7853

Abstract: A semiconductor device can include a substrate and a fin body that protrudes from a surface of the substrate. The fin body can include a lower portion having a first lattice structure and an upper portion, separated from the lower portion by a boundary, the upper portion having a second lattice structure that is different than the first lattice structure. An epitaxially grown epitxial layer can be on the lower and upper portions.

Abstract translation: 半导体器件可以包括从衬底的表面突出的衬底和鳍体。 翅片本体可以包括具有第一格子结构的下部和与下部分开边界的上部，上部具有不同于第一格子结构的第二格子结构。 外延生长的外延层可以在下部和上部。