公开(公告)号：US11835579B2

公开(公告)日：2023-12-05

申请号：US17335963

申请日：2021-06-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hwangju Song ,  Jaeeun Yoon ,  Jiseok Lee ,  Sangwon Hwang

IPC: G01R31/317 ,  G11C16/04 ,  G11C11/08 ,  H01L25/065 ,  H01L25/18 ,  H01L23/00 ,  G11C16/08

CPC classification number: G01R31/31724 ,  G01R31/31703 ,  G11C16/0483 ,  G11C16/08 ,  H01L24/08 ,  H01L25/0657 ,  H01L25/18 ,  H01L2224/08145 ,  H01L2924/1431 ,  H01L2924/14511

Abstract: A memory device includes; a memory cell array including memory cells, a row decoder selecting a word line in response to a received address, and control logic including a sensing capacitor having a size proportional to a size of a word line capacitor associated with the selected word line. The control logic measures line resistance of the selected word line by precharging the selected word line, performing a charge sharing operation between the selected word line and the sensing capacitor following the precharging of the selected word line, and measuring a voltage of the sensing capacitor following the performing of the charge sharing operation.

公开(公告)号：US11682460B2

公开(公告)日：2023-06-20

申请号：US17714552

申请日：2022-04-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-ho Seo ,  Sangwon Hwang ,  Suk-Eun Kang ,  Haneol Jang ,  Youngwook Jeong ,  Wanha Hwang

IPC: G11C16/16 ,  G11C16/26 ,  G11C16/34 ,  G11C16/24 ,  G11C16/08

CPC classification number: G11C16/16 ,  G11C16/08 ,  G11C16/24 ,  G11C16/26 ,  G11C16/3445

Abstract: A program method of a nonvolatile memory device including receiving a write address and write data, generating a seed corresponding to the write address, generating a random sequence by using the seed, randomizing the write data by using the random sequence, and programming the randomized write data to a memory area corresponding to the write address may be provided. The seed may provide state shaping variable depending on a location of a word line, at which the received write data is to be programmed.

公开(公告)号：US11798645B2

公开(公告)日：2023-10-24

申请号：US17467968

申请日：2021-09-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jiseok Lee ,  Hwangju Song ,  Namyong Kim ,  Jaeeun Yoon ,  Sangmu Lee ,  Sangwon Hwang

IPC: G11C29/42 ,  G11C29/12 ,  G11C16/34 ,  G11C16/26 ,  G11C16/10

CPC classification number: G11C29/42 ,  G11C16/102 ,  G11C16/26 ,  G11C16/3495 ,  G11C29/12005

Abstract: A storage device for performing a reliability check by using error correction code (ECC) data is provided. The storage device includes a memory controller configured to detect the number of errors of second read data read out by a second read operation, based on ECC data of first read data read by a first read operation of a memory device. The memory controller includes a memory check circuit that includes a counter configured to count states of memory cells, a comparator configured to compare respective count numbers of the states with one another, and a register configured to store the number of errors based on a result of the comparison.

公开(公告)号：US11322208B2

公开(公告)日：2022-05-03

申请号：US17098590

申请日：2020-11-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-ho Seo ,  Sangwon Hwang ,  Suk-Eun Kang ,  Haneol Jang ,  Youngwook Jeong ,  Wanha Hwang

IPC: G11C16/26 ,  G11C16/16 ,  G11C16/34 ,  G11C16/24 ,  G11C16/08

Abstract: A program method of a nonvolatile memory device including receiving a write address and write data, generating a seed corresponding to the write address, generating a random sequence by using the seed, randomizing the write data by using the random sequence, and programming the randomized write data to a memory area corresponding to the write address may be provided. The seed may provide state shaping variable depending on a location of a word line, at which the received write data is to be programmed.