公开(公告)号：US20230357977A1

公开(公告)日：2023-11-09

申请号：US18351884

申请日：2023-07-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Namgil KIM ,  Junhyun PARK ,  Seunghun LEE ,  Youngjin UM

IPC: D06F37/40 ,  D06F34/14

CPC classification number: D06F37/40 ,  D06F34/14 ,  D06F2103/24

Abstract: A washing apparatus is provided. The washing apparatus includes a main body having a door, a spin basket disposed inside the main body and rotating about a rotary shaft, a motor providing power to the rotary shaft, a spring clutch including a first core rotating in conjunction with the motor and a second core rotating in conjunction with the rotation shaft, and selectively transmitting power of the motor to the spin basket, a processor, and a sensor that measures revolutions per minute (RPM) of the spring clutch, and when the driving of the motor based on an input signal is completed, the processor controls to stop the driving of the motor, and after stopping the driving of the motor, controls the motor to be re-driven for a preset driving time based on a measurement value of the sensor.

公开(公告)号：US20230268441A1

公开(公告)日：2023-08-24

申请号：US18307279

申请日：2023-04-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaemun KIM ,  Dahye KIM ,  Jinbum KIM ,  Gyeom KIM ,  Dohee KIM ,  Dongwoo KIM ,  Seunghun LEE

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/417 ,  H01L21/8234

CPC classification number: H01L29/785 ,  H01L29/66818 ,  H01L29/41791 ,  H01L29/6681 ,  H01L21/823431 ,  H01L29/045

Abstract: A semiconductor device includes a substrate including a fin-type active region, the fin-type active region extending in a first direction; a plurality of channel layers on the fin-type active region, the plurality of channel layers including an uppermost channel layer, a lowermost channel layer, and an intermediate channel layer isolated from direct contact with each other in a direction perpendicular to an upper surface of the substrate; a gate electrode surrounding the plurality of channel layers and extending in a second direction intersecting the first direction; a gate insulating film between the plurality of channel layers and the gate electrode; and source/drain regions electrically connected to the plurality of channel layers. In a cross section taken in the second direction, the uppermost channel layer has a width greater than a width of the intermediate channel layer.

公开(公告)号：US20230175191A1

公开(公告)日：2023-06-08

申请号：US17955831

申请日：2022-09-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seunghun LEE ,  Junhyun PARK

IPC: D06F39/08 ,  D06F23/04 ,  D06F23/02 ,  D06F34/18 ,  D06F34/32 ,  D06F34/06 ,  D06F37/30 ,  D06F33/34

CPC classification number: D06F39/087 ,  D06F23/04 ,  D06F23/02 ,  D06F34/18 ,  D06F34/32 ,  D06F34/06 ,  D06F37/304 ,  D06F33/34 ,  D06F39/088 ,  D06F2103/18

Abstract: A washing machine capable of determining an accurate state of a water supplier during a water supply course includes a tub; a drum rotationally arranged in the tub; a driving motor configured to rotate the drum; a water supplier configured to supply water into the tub; a water level sensor configured to measure a water level in the tub; and a controller configured to control the driving motor to perform a first weight detection course before water supply is started, and control the driving motor to perform a second weight detection course based on the water level in the tub being less than a preset water level when a predetermined time has elapsed after the water supply into the tub is started.

公开(公告)号：US20220109065A1

公开(公告)日：2022-04-07

申请号：US17550712

申请日：2021-12-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangmoon LEE ,  Kyungin CHOI ,  Seunghun LEE

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/417 ,  H01L29/66

Abstract: An active pattern structure includes a lower active pattern protruding from an upper surface of a substrate in a vertical direction substantially perpendicular to an upper surface of the substrate, a buffer structure on the lower active pattern, at least a portion of which may include aluminum silicon oxide, and an upper active pattern on the buffer structure.

公开(公告)号：US20240357787A1

公开(公告)日：2024-10-24

申请号：US18540008

申请日：2023-12-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Inchan HWANG ,  Kyung Hee CHO ,  Seunghun LEE

IPC: H10B10/00 ,  H01L23/522 ,  H01L23/528 ,  H01L29/423

CPC classification number: H10B10/12 ,  H01L23/5226 ,  H01L23/5286 ,  H01L29/4232

Abstract: A semiconductor memory device comprising a substrate having first and second surfaces opposite to each other, a lower active region on the first surface and including a first lower gate electrode and a first lower active contact, an upper active region on the lower active region and including a first upper gate electrode and a first upper active contact that vertically overlap at least a part of the first lower active contact, a first connection structure vertically connecting the first upper active contact to the first lower active contact, a first metal layer on the first surface, and a backside metal layer on the second surface. The first upper gate electrode and the first lower gate electrode are connected and form a first gate electrode. The first metal layer includes a first node line electrically connecting the first gate electrode to the first upper active contact.

公开(公告)号：US20220238666A1

公开(公告)日：2022-07-28

申请号：US17404078

申请日：2021-08-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dohee KIM ,  Gyeom KIM ,  Jinbum KIM ,  Jaemun KIM ,  Seunghun LEE

IPC: H01L29/417 ,  H01L29/78 ,  H01L27/088

Abstract: An integrated circuit (IC) device includes a fin-type active region extending in a first lateral direction on a substrate, a gate line extending in a second lateral direction on the fin-type active region, an insulating spacer covering a sidewall of the gate line, a source/drain region at a position adjacent to the gate line, a metal silicide film covering a top surface of the source/drain region, and a source/drain contact apart from the gate line with the insulating spacer therebetween in the first lateral direction. The source/drain contact includes a bottom contact segment being in contact with a top surface of the metal silicide film and an upper contact segment integrally connected to the bottom contact segment. A width of the bottom contact segment is greater than a width of at least a portion of the upper contact segment in the first lateral direction.

公开(公告)号：US20210143271A1

公开(公告)日：2021-05-13

申请号：US16887900

申请日：2020-05-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangmoon LEE ,  Kyungin CHOI ,  Seunghun LEE

IPC: H01L29/78 ,  H01L29/417 ,  H01L29/66 ,  H01L29/06

Abstract: An active pattern structure includes a lower active pattern protruding from an upper surface of a substrate in a vertical direction substantially perpendicular to an upper surface of the substrate, a buffer structure on the lower active pattern, at least a portion of which may include aluminum silicon oxide, and an upper active pattern on the buffer structure.

公开(公告)号：US20250092594A1

公开(公告)日：2025-03-20

申请号：US18829120

申请日：2024-09-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyomin AHN ,  Jehyung CHO ,  Jeongil KANG ,  Seunghoon KIM ,  Junhyun PARK ,  Sungmo LEE ,  Seunghun LEE ,  Junghyun LEE

IPC: D06F34/10 ,  D06F34/05 ,  D06F34/08 ,  D06F34/28 ,  H02P3/14

Abstract: A washing machine including a motor regenerative braking configuration uses a buck power converter capable of reducing a direct current (DC) voltage, in association with charging an energy storage device when a voltage of a DC link capacitor becomes greater than or equal to a certain voltage. The washing machine uses the buck power converter in association with discharging the energy storage device and charging the DC link capacitor when the voltage of the DC link capacitor decreases. The washing machine may utilize regenerative braking energy by reducing or increasing a voltage amount provided from the energy storage device to a load by using a power conversion device.

公开(公告)号：US20240167211A1

公开(公告)日：2024-05-23

申请号：US18537227

申请日：2023-12-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seunghun LEE ,  Junhyeon PARK ,  Sungdai CHO

IPC: D06F34/05 ,  D06F34/08

CPC classification number: D06F34/05 ,  D06F34/08 ,  D06F34/18

Abstract: A clothes treating system includes a first clothes treating apparatus including a first drum, a first controller configured to control an operation of the first drum, and a diagnostic port; and a second clothes treating apparatus including a second drum, and a second controller configured to control an operation of the second drum. The first controller includes a first transmitting end and a first receiving end, and is configured to receive a first diagnosis request signal from the diagnostic port through the first receiving end, identify a diagnosis target based on the first diagnosis request signal, transmit a first diagnosis result signal to the diagnostic port through the first transmitting end after performing a diagnostic operation corresponding to the first diagnosis request signal in response to the diagnosis target being identified as the first clothes treating apparatus, and in response to the diagnosis target being identified as the second clothes treating apparatus, transmit a second diagnosis request signal to the second controller through the first transmitting end.

公开(公告)号：US20220069134A1

公开(公告)日：2022-03-03

申请号：US17206229

申请日：2021-03-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongwoo KIM ,  Jinbum KIM ,  Gyeom KIM ,  Dohee KIM ,  Seunghun LEE

IPC: H01L29/786 ,  H01L29/06 ,  H01L29/161 ,  H01L29/423 ,  H01L29/417 ,  H01L21/02 ,  H01L29/66

Abstract: A semiconductor device including an active region extending in a first direction on a substrate; channel layers vertically spaced apart on the active region; a gate structure extending in a second direction and intersecting the active region, the gate structure surrounding the channel layers; a source/drain region on the active region in contact with the channel layers; and a contact plug connected to the source/drain region, wherein the source/drain region includes a first epitaxial layer on side surfaces of the channel layers and including a first impurity; a second epitaxial layer on the first epitaxial layer and including the first impurity and a second impurity; and a third epitaxial layer on the second epitaxial layer and including the first impurity, and in a horizontal sectional view, the second epitaxial layer includes a peripheral portion having a thickness in the first direction that increases along the second direction.