公开(公告)号：US20190180972A1

公开(公告)日：2019-06-13

申请号：US16003870

申请日：2018-06-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun Ho LEE ,  Jong Mun PARK ,  Byoung Sup AHN ,  Jin CHOI ,  Shuichi TAMAMUSHI

IPC: H01J37/09 ,  H01J37/10

Abstract: An aperture system of an electron beam apparatus includes a plurality of apertures each including a first area including at least one through hole allowing an electron beam to pass therethrough and a second area disposed outside the first area and including first and second alignment keys, wherein two apertures, among the plurality of apertures, include the first alignment keys arranged in mutually overlapping positions and having the same size, and an aperture, excluding the two apertures, among the plurality of apertures, includes the second alignment keys arranged to overlap the first alignment keys and having an area larger than an area of the first alignment keys.

公开(公告)号：US20170082921A1

公开(公告)日：2017-03-23

申请号：US15218284

申请日：2016-07-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-su KIM ,  Shuichi TAMAMUSHI ,  In-kyun SHIN ,  Sung-il LEE ,  Jin CHOI

IPC: G03F1/70 ,  G03F1/72

CPC classification number: G03F1/70 ,  G03F1/78 ,  G03F7/2059 ,  G03F7/70616 ,  G03F7/70875

Abstract: A method of manufacturing a reticle, the method including preparing a substrate, determining position data of a pattern to be formed on the substrate, and setting a primary exposure condition to form the pattern; performing a primary exposure simulation regarding the substrate based on the position data of the pattern and the primary exposure condition; calculating a primary deformation rate of the substrate, which is generated in the primary exposure simulation; correcting the position data of the pattern based on the primary deformation rate of the substrate to provide a corrected position data of the pattern; and exposing the substrate under the primary exposure condition based on the corrected position data of the pattern.

公开(公告)号：US20150311032A1

公开(公告)日：2015-10-29

申请号：US14632767

申请日：2015-02-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yong-Seok JUNG ,  Shuichi TAMAMUSHI ,  In-Hwan NOH ,  In-Kyun SHIN ,  Sang-Hee LEE ,  Jin CHOI

IPC: H01J37/147 ,  H01J37/30 ,  H01J37/317

CPC classification number: H01J37/1472 ,  H01J37/3005 ,  H01J37/3174 ,  H01J2237/063 ,  H01J2237/15

Abstract: An exposure method may include: radiating a charged particle beam in an exposure system comprising a beam generator, radiating the beam, and main and auxiliary deflectors deflecting the beam to determine a position of a beam shot; determining whether a deflection distance from a first position of a latest radiated beam shot to a second position of a subsequent beam shot is within a first distance in a main field area of an exposure target area, the main field area having a size determined by the main deflector; setting a settling time according to the deflection distance so that a settling time of the subsequent beam shot is set to a constant minimum value, greater than zero, when the deflection distance from the first position to the second position is within the first distance; and deflecting the beam using the main deflector based on the set settling time.

Abstract translation: 曝光方法可以包括：在包括光束发生器，辐射光束以及偏转光束的主和辅助偏转器的曝光系统中辐射带电粒子束以确定射束的位置; 确定从最近发射光束的第一位置到随后的射束射击的第二位置的偏转距离是否在曝光目标区域的主场区域内的第一距离内，所述主场区域具有由 主导流板 根据所述偏转距离设定建立时间，使得当从所述第一位置到所述第二位置的偏转距离在所述第一距离内时，所述后续射束的建立时间被设定为大于零的恒定最小值; 并且基于设定的建立时间使用主偏转器偏转光束。