公开(公告)号：US09099336B2

公开(公告)日：2015-08-04

申请号：US13834488

申请日：2013-03-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae-Won Ha ,  Suk-Hoon Kim ,  Ju-Youn Kim ,  Kwang-You Seo ,  Jong-Mil Youn

IPC: H01L27/092 ,  H01L29/78 ,  H01L21/8238 ,  H01L29/49 ,  H01L29/51 ,  H01L29/10

CPC classification number: H01L27/092 ,  H01L21/823807 ,  H01L21/823842 ,  H01L29/1054 ,  H01L29/4958 ,  H01L29/517 ,  H01L29/78 ,  H01L29/7833

Abstract: A semiconductor device using a high-k dielectric film is provided. The semiconductor device comprises a first gate insulating layer on a substrate and a first barrier layer on the first gate insulating layer, the first barrier layer having a first thickness. A first work function control layer is on the first barrier layer. A second barrier layer is present on the first work function control layer, the second barrier layer having a second thickness that is less than the first thickness.

Abstract translation: 提供了使用高k电介质膜的半导体器件。 半导体器件包括衬底上的第一栅极绝缘层和第一栅极绝缘层上的第一势垒层，第一势垒层具有第一厚度。 第一功能控制层位于第一阻挡层上。 第二阻挡层存在于第一功函数控制层上，第二阻挡层具有小于第一厚度的第二厚度。

公开(公告)号：US20140239405A1

公开(公告)日：2014-08-28

申请号：US13834488

申请日：2013-03-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae-Won Ha ,  Suk-Hoon Kim ,  Ju-Youn Kim ,  Kwang-You Seo ,  Jong-Mil Youn

IPC: H01L27/092 ,  H01L29/78

CPC classification number: H01L27/092 ,  H01L21/823807 ,  H01L21/823842 ,  H01L29/1054 ,  H01L29/4958 ,  H01L29/517 ,  H01L29/78 ,  H01L29/7833

Abstract: A semiconductor device using a high-k dielectric film is provided. The semiconductor device comprises a first gate insulating layer on a substrate and a first barrier layer on the first gate insulating layer, the first barrier layer having a first thickness. A first work function control layer is on the first barrier layer. A second barrier layer is present on the first work function control layer, the second barrier layer having a second thickness that is less than the first thickness.

Abstract translation: 提供了使用高k电介质膜的半导体器件。 半导体器件包括衬底上的第一栅极绝缘层和第一栅极绝缘层上的第一势垒层，第一势垒层具有第一厚度。 第一功能控制层位于第一阻挡层上。 第二阻挡层存在于第一功函数控制层上，第二阻挡层具有小于第一厚度的第二厚度。

公开(公告)号：US09035398B2

公开(公告)日：2015-05-19

申请号：US14010961

申请日：2013-08-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seok-Jun Won ,  Suk-Hoon Kim ,  Hyung-Suk Jung

IPC: H01L29/66 ,  H01L29/78 ,  H01L21/8238 ,  H01L21/28 ,  H01L29/49 ,  H01L29/51

CPC classification number: H01L29/78 ,  H01L21/28176 ,  H01L21/28194 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545

Abstract: A semiconductor device includes an interlayer insulating film on a substrate, the interlayer insulating film including a trench, a gate insulating film in the trench, a diffusion film on the gate insulating film, the diffusion film including a first diffusion material, a gate metal structure on the diffusion film, the gate metal structure including a second diffusion material, and a diffusion prevention film between the gate metal structure and the diffusion film, the diffusion prevention film being configured to prevent diffusion of the second diffusion material from the gate metal structure, the first diffusion material diffused from the diffusion film exists in the gate insulating film.

Abstract translation: 一种半导体器件，包括：衬底上的层间绝缘膜，所述层间绝缘膜包括沟槽，所述沟槽中的栅极绝缘膜，所述栅极绝缘膜上的扩散膜，所述扩散膜包括第一扩散材料，栅极金属结构 在扩散膜上，包括第二扩散材料的栅极金属结构和栅极金属结构和扩散膜之间的扩散防止膜，所述扩散防止膜被配置为防止第二扩散材料从栅极金属结构扩散， 从扩散膜扩散的第一扩散材料存在于栅极绝缘膜中。