公开(公告)号：US20200243466A1

公开(公告)日：2020-07-30

申请号：US16527323

申请日：2019-07-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Nam Kim ,  Tae Seong Kim ,  Hoon Joo Na ,  Kwang Jin Moon

IPC: H01L23/00 ,  H01L23/48 ,  H01L25/18 ,  H01L23/522 ,  H01L23/528

Abstract: A semiconductor device includes a first semiconductor chip having a first bonding layer and a second semiconductor chip stacked on the first semiconductor chip and having a second bonding layer. The first bonding layer includes a first bonding pad, a plurality of first internal vias, and a first interconnection connecting the first bonding pad and the plurality of first internal vias. The second bonding layer includes a second bonding pad bonded to the first bonding pad. An upper surface of the first interconnection and an upper surface of the first bonding pad are coplanar with an upper surface of the first bonding layer. The first interconnection is electrically connected to the plurality of different first internal lines through the plurality of first internal vias.

公开(公告)号：US12014763B2

公开(公告)日：2024-06-18

申请号：US17882790

申请日：2022-08-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chan Kyung Kim ,  Ji Yean Kim ,  Hyun Taek Jung ,  Ji Eun Kim ,  Tae Seong Kim ,  Sang-Hoon Jung ,  Jae Wook Joo

IPC: G11C11/16

CPC classification number: G11C11/1675 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1657 ,  G11C11/1673

Abstract: Magnetic junction memory devices and methods for writing data to memory devices are provided. The magnetic junction memory device includes a first memory bank including first magnetic junction memory cells, a first local write driver adjacent to the first memory bank, connected to global data lines, the first local write driver configured to write data to the first magnetic junction memory cells via local data lines, a second memory bank adjacent to the first memory bank and including second magnetic junction memory cells, a second local write driver adjacent to the second memory bank, connected to the global data lines, the second local write driver configured to write data to the second magnetic junction memory cells via local data lines, and a global write driver configured to provide first and second write data to the first and second local write driver, respectively, via the global data lines.

公开(公告)号：US11889703B2

公开(公告)日：2024-01-30

申请号：US17975242

申请日：2022-10-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chan Kyung Kim ,  Eun Ji Lee ,  Ji Yean Kim ,  Tae Seong Kim ,  Jae Wook Joo

IPC: H10B61/00 ,  G11C11/16 ,  H10N50/10

CPC classification number: H10B61/20 ,  G11C11/1659 ,  G11C11/1673 ,  H10N50/10

Abstract: A magnetic junction memory device is provided. The magnetic junction memory device including a sensing circuit including a sensing node, the sensing node being connected to a first end of a transistor and configured to change a voltage of the sensing node in accordance with a resistance of a magnetic junction memory cell, a gating voltage generator circuit configured to generate a gating voltage of the transistor using a reference resistor and a reference voltage, and a read circuit configured to read data from the magnetic junction memory cell using the reference voltage and the voltage of the sensing node.

公开(公告)号：US11515357B2

公开(公告)日：2022-11-29

申请号：US16798615

申请日：2020-02-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chan Kyung Kim ,  Eun Ji Lee ,  Ji Yean Kim ,  Tae Seong Kim ,  Jae Wook Joo

IPC: H01L27/22 ,  G11C11/16 ,  H01L43/08

Abstract: A magnetic junction memory device is provided. The magnetic junction memory device including a sensing circuit including a sensing node, the sensing node being connected to a first end of a transistor and configured to change a voltage of the sensing node in accordance with a resistance of a magnetic junction memory cell, a gating voltage generator circuit configured to generate a gating voltage of the transistor using a reference resistor and a reference voltage, and a read circuit configured to read data from the magnetic junction memory cell using the reference voltage and the voltage of the sensing node.

公开(公告)号：US11133277B2

公开(公告)日：2021-09-28

申请号：US16527323

申请日：2019-07-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Nam Kim ,  Tae Seong Kim ,  Hoon Joo Na ,  Kwang Jin Moon

IPC: H01L23/00 ,  H01L23/48 ,  H01L25/18 ,  H01L23/528 ,  H01L23/522

Abstract: A semiconductor device includes a first semiconductor chip having a first bonding layer and a second semiconductor chip stacked on the first semiconductor chip and having a second bonding layer. The first bonding layer includes a first bonding pad, a plurality of first internal vias, and a first interconnection connecting the first bonding pad and the plurality of first internal vias. The second bonding layer includes a second bonding pad bonded to the first bonding pad. An upper surface of the first interconnection and an upper surface of the first bonding pad are coplanar with an upper surface of the first bonding layer. The first interconnection is electrically connected to the plurality of different first internal lines through the plurality of first internal vias.

公开(公告)号：US11443791B2

公开(公告)日：2022-09-13

申请号：US16848140

申请日：2020-04-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chan Kyung Kim ,  Ji Yean Kim ,  Hyun Taek Jung ,  Ji Eun Kim ,  Tae Seong Kim ,  Sang-Hoon Jung ,  Jae Wook Joo

IPC: G11C11/16

Abstract: Magnetic junction memory devices and methods for writing data to memory devices are provided. The magnetic junction memory device includes a first memory bank including first magnetic junction memory cells, a first local write driver adjacent to the first memory bank, connected to global data lines, the first local write driver configured to write data to the first magnetic junction memory cells via local data lines, a second memory bank adjacent to the first memory bank and including second magnetic junction memory cells, a second local write driver adjacent to the second memory bank, connected to the global data lines, the second local write driver configured to write data to the second magnetic junction memory cells via local data lines, and a global write driver configured to provide first and second write data to the first and second local write driver, respectively, via the global data lines.