公开(公告)号：US20160225451A1

公开(公告)日：2016-08-04

申请号：US15094184

申请日：2016-04-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-hun Jeong ,  Han-soo Kim ,  Won-seok Cho ,  Jae-hoon Jang ,  Sun-il Shim

IPC: G11C16/04 ,  H01L23/522 ,  H01L27/115 ,  G11C16/10 ,  G11C16/26

CPC classification number: G11C16/0483 ,  G11C16/10 ,  G11C16/26 ,  H01L23/5226 ,  H01L27/11524 ,  H01L27/11551 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/66825 ,  H01L29/7881

Abstract: A non-volatile memory device having a vertical structure includes a NAND string having a vertical structure. The NAND string includes a plurality of memory cells, and at least one pair of first selection transistors arranged to be adjacent to a first end of the plurality of memory cells. A plurality of word lines are coupled to the plurality of memory cells of the NAND string. A first selection line is commonly connected to the at least one pair of first selection transistors of the NAND string.

公开(公告)号：US09881934B2

公开(公告)日：2018-01-30

申请号：US14495397

申请日：2014-09-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung-min Hwang ,  Han-soo Kim ,  Won-seok Cho ,  Jae-hoon Jang

IPC: H01L27/115 ,  H01L21/265 ,  H01L21/285 ,  H01L21/306 ,  H01L21/768 ,  H01L29/66 ,  H01L27/11582 ,  H01L27/11578 ,  G11C16/04

CPC classification number: H01L27/11582 ,  G11C16/0483 ,  H01L21/265 ,  H01L21/28518 ,  H01L21/30604 ,  H01L21/768 ,  H01L27/11578 ,  H01L29/6656

Abstract: Provided is a vertical non-volatile memory device having a metal source line. The vertical non-volatile memory device includes cell string units that are formed on first portions of a semiconductor substrate and are vertically arranged with respect to a surface of the semiconductor substrate, impurity regions formed on second portions of the semiconductor substrate between the cell string units, conductive lines formed on the impurity regions, and spacers that are formed on the sidewalls of the cell string units and insulate the conductive lines from the cells string units.

公开(公告)号：US09564221B2

公开(公告)日：2017-02-07

申请号：US15094184

申请日：2016-04-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-hun Jeong ,  Han-soo Kim ,  Won-seok Cho ,  Jae-hoon Jang ,  Sun-il Shim

IPC: G11C16/04 ,  H01L27/115 ,  H01L29/66 ,  H01L29/788 ,  G11C16/10 ,  G11C16/26 ,  H01L23/522

CPC classification number: G11C16/0483 ,  G11C16/10 ,  G11C16/26 ,  H01L23/5226 ,  H01L27/11524 ,  H01L27/11551 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/66825 ,  H01L29/7881

Abstract: A non-volatile memory device having a vertical structure includes a NAND string having a vertical structure. The NAND string includes a plurality of memory cells, and at least one pair of first selection transistors arranged to be adjacent to a first end of the plurality of memory cells. A plurality of word lines are coupled to the plurality of memory cells of the NAND string. A first selection line is commonly connected to the at least one pair of first selection transistors of the NAND string.

Abstract translation: 具有垂直结构的非易失性存储器件包括具有垂直结构的NAND串。 NAND串包括多个存储单元，并且至少一对第一选择晶体管布置成与多个存储单元的第一端相邻。 多个字线耦合到NAND串的多个存储单元。 第一选择线通常连接到NAND串的至少一对第一选择晶体管。

公开(公告)号：US09336884B2

公开(公告)日：2016-05-10

申请号：US14302025

申请日：2014-06-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-hun Jeong ,  Han-soo Kim ,  Won-seok Cho ,  Jae-hoon Jang ,  Sun-il Shim

IPC: G11C16/04 ,  H01L27/115 ,  H01L29/66 ,  H01L29/788

CPC classification number: G11C16/0483 ,  G11C16/10 ,  G11C16/26 ,  H01L23/5226 ,  H01L27/11524 ,  H01L27/11551 ,  H01L27/11556 ,  H01L27/11582 ,  H01L29/66825 ,  H01L29/7881

Abstract: A non-volatile memory device having a vertical structure includes a NAND string having a vertical structure. The NAND string includes a plurality of memory cells, and at least one pair of first selection transistors arranged to be adjacent to a first end of the plurality of memory cells. A plurality of word lines are coupled to the plurality of memory cells of the NAND string. A first selection line is commonly connected to the at least one pair of first selection transistors of the NAND string.