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    Image display device and operating method thereof
    4.
    发明授权
    Image display device and operating method thereof 有权

    公开(公告)号：US10924795B2

    公开(公告)日：2021-02-16

    申请号：US16295598

    申请日：2019-03-07

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Dong-won Ok ,  Jae-oh Park ,  Han-soo Kim ,  Ji-eun Byun

    IPC: H04N21/422 ,  H04N21/431 ,  H04N21/438 ,  G06F3/0485 ,  G06F3/16 ,  G06F3/0484 ,  H04N21/41

    Abstract: An image display device includes: a processor; a memory configured to store channel information corresponding to at least one channel; and at least one program which is stored in the memory and executed by the processor. The program may include instructions for controlling a display so as to move a channel indicator in a first or second direction on a channel scroll bar and to display channel information of a channel corresponding to a point at which the channel indicator is located, in response to a first input of pressing a channel-up or channel-down key for a long time, and for switching a current channel to the channel corresponding to the point at which the channel indicator is located and displaying an image corresponding to the switched channel, in response to a second input of releasing the channel-up or channel-down key.

    Display apparatus, UI display method thereof and computer-readable recording medium
    7.
    发明授权
    Display apparatus, UI display method thereof and computer-readable recording medium 有权
    显示装置，UI显示方法和计算机可读记录介质

    公开(公告)号：US09465447B2

    公开(公告)日：2016-10-11

    申请号：US14104598

    申请日：2013-12-12

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Yeo-ri Yoon ,  Dae-Hyun Kim ,  Han-soo Kim ,  Chang-soo Lee

    IPC: G06F3/048 ,  G06F3/023 ,  G06F17/24 ,  G06F3/0488

    CPC classification number: G06F3/0236 ,  G06F3/04886 ,  G06F17/24

    Abstract: A display apparatus which corrects input characters by moving a cursor in word units is provided. The display apparatus includes a communication interface configured to receive a control command for a character input from a control device, a display configured to display characters corresponding to the control command, and a controller configured to control the display to move a cursor in word units when a correction command to correct the displayed characters is received.

    Abstract translation: 提供了通过以字为单位移动光标来校正输入字符的显示装置。 显示装置包括：通信接口，被配置为接收来自控制装置的字符输入的控制命令;显示器，被配置为显示与控制命令对应的字符;以及控制器，被配置为控制显示器以单位单位移动光标 接收用于校正所显示的字符的校正命令。

    Vertical structure non-volatile memory device having insulating regions that are formed as air gaps
    9.
    发明授权
    Vertical structure non-volatile memory device having insulating regions that are formed as air gaps 有权
    具有形成为气隙的绝缘区域的垂直结构的非易失性存储器件

    公开(公告)号：US09406688B2

    公开(公告)日：2016-08-02

    申请号：US14726065

    申请日：2015-05-29

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sung-min Hwang ,  Han-soo Kim

    IPC: H01L27/115 ,  H01L29/788 ,  H01L29/792

    CPC classification number: H01L27/11529 ,  H01L27/11524 ,  H01L27/11548 ,  H01L27/11551 ,  H01L27/11556 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11575 ,  H01L27/11578 ,  H01L27/11582 ,  H01L29/7889 ,  H01L29/7926

    Abstract: A vertical structure non-volatile memory device includes semiconductor regions that vertically extend on a substrate, a plurality of memory cell strings that vertically extend on the substrate along sidewalls of the semiconductor regions and include a plurality of memory cells and at least one or more first selection transistors, which are disposed on sides of the memory cells and are adjacent to one another. A plurality of wordlines is connected to the memory cells of the memory cell strings. A first selection line is connected to the selection transistors of the memory cell strings and insulating regions are formed as air gaps between the first selection transistors of the adjacent memory cell strings.

    Abstract translation: 垂直结构的非易失性存储器件包括在衬底上垂直延伸的半导体区域，沿着半导体区域的侧壁在衬底上垂直延伸的多个存储单元串，并且包括多个存储单元和至少一个或多个第一 选择晶体管，它们设置在存储单元的侧面并彼此相邻。 多个字线连接到存储单元串的存储单元。 第一选择线连接到存储单元串的选择晶体管，绝缘区形成为相邻存储单元串的第一选择晶体管之间的气隙。

    VERTICAL NON-VOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME
    10.
    发明申请
    VERTICAL NON-VOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
    垂直非易失性存储器件及其制造方法

    公开(公告)号：US20130279233A1

    公开(公告)日：2013-10-24

    申请号：US13921554

    申请日：2013-06-19

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sung-min Hwang ,  Han-soo Kim ,  Won-seok CHO ,  Jae-hoon Jang ,  Sun-il Shim ,  Jae-hun Jeong ,  Ki-hyun Kim

    IPC: G11C5/06

    CPC classification number: G11C5/06 ,  H01L23/5283 ,  H01L27/112 ,  H01L27/115 ,  H01L27/11517

    Abstract: A vertical non-volatile memory device is structured/fabricated to include a substrate, groups of memory cell strings each having a plurality of memory transistors distributed vertically so that the memory throughout multiple layers on the substrate, integrated word lines coupled to sets of the memory transistors, respectively, and stacks of word select lines. The memory transistors of each set are those transistors, of one group of the memory cell strings, which are disposed in the same layer above the substrate. The word select lines are respectively connected to the integrated word lines.

    Abstract translation: 垂直非易失性存储器件被构造/制造成包括衬底，每组具有多个垂直分布的存储器晶体管的存储单元串组，使得衬底上多层的存储器，与存储器组合耦合的集成字线 晶体管和字选择线的堆叠。 每组的存储晶体管是一组存储单元串的晶体管，它们设置在衬底上方的相同层中。 字选择线分别连接到集成字线。

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