Abstract:
A non-volatile memory device having a vertical structure includes a NAND string having a vertical structure. The NAND string includes a plurality of memory cells, and at least one pair of first selection transistors arranged to be adjacent to a first end of the plurality of memory cells. A plurality of word lines are coupled to the plurality of memory cells of the NAND string. A first selection line is commonly connected to the at least one pair of first selection transistors of the NAND string.
Abstract:
A device includes a photographing unit, an image processing unit, a buffer, a storage unit, and a digital signal processor. The buffer stores index information to be assigned to at least one image signal obtained by the photographing unit, file name and storage path information to be provided to the at least one image signal when the at least one image signal is stored in the storage unit. The digital signal processor displays the most recently stored image signal when a display input instruction to display a currently captured image is received, searches the storage unit when an input instruction to display previously-captured images is additionally received, if a corresponding image file is found in the storage unit, displays the found image file, and if the corresponding image file is not found in the storage unit, displays an image signal stored in the buffer using the index information.
Abstract:
A vertical non-volatile memory device is structured/fabricated to include a substrate, groups of memory cell strings each having a plurality of memory transistors distributed vertically so that the memory throughout multiple layers on the substrate, integrated word lines coupled to sets of the memory transistors, respectively, and stacks of word select lines. The memory transistors of each set are those transistors, of one group of the memory cell strings, which are disposed in the same layer above the substrate. The word select lines are respectively connected to the integrated word lines.
Abstract:
A non-volatile memory device having a vertical structure includes a NAND string having a vertical structure. The NAND string includes a plurality of memory cells, and at least one pair of first selection transistors arranged to be adjacent to a first end of the plurality of memory cells. A plurality of word lines are coupled to the plurality of memory cells of the NAND string. A first selection line is commonly connected to the at least one pair of first selection transistors of the NAND string.
Abstract:
A non-volatile memory device having a vertical structure includes a NAND string having a vertical structure. The NAND string includes a plurality of memory cells, and at least one pair of first selection transistors arranged to be adjacent to a first end of the plurality of memory cells. A plurality of word lines are coupled to the plurality of memory cells of the NAND string. A first selection line is commonly connected to the at least one pair of first selection transistors of the NAND string.
Abstract:
A device includes a photographing unit, an image processing unit, a buffer, a storage unit, and a digital signal processor. The buffer stores index information to be assigned to at least one image signal obtained by the photographing unit, file name and storage path information to be provided to the at least one image signal when the at least one image signal is stored in the storage unit. The digital signal processor displays the most recently stored image signal when a display input instruction to display a currently captured image is received, searches the storage unit when an input instruction to display previously-captured images is additionally received, if a corresponding image file is found in the storage unit, displays the found image file, and if the corresponding image file is not found in the storage unit, displays an image signal stored in the buffer using the index information.