公开(公告)号：US07024536B2

公开(公告)日：2006-04-04

申请号：US10253408

申请日：2002-09-24

申请人： Sang-hyun Park ,  Seh-Woong Jeong ,  Shin-dug Kim ,  Jung-Hoon Lee

发明人： Sang-hyun Park ,  Seh-Woong Jeong ,  Shin-dug Kim ,  Jung-Hoon Lee

IPC分类号： G06F12/10

CPC分类号： G06F12/1027 ,  G06F2212/1028 ,  G06F2212/652 ,  G06F2212/681 ,  Y02D10/13

摘要： A translation look-aside buffer (TLB) capable of reducing power consumption and improving performance of a memory is provided. The fully-associative TLB which converts a virtual address into a physical address, comprises a first TLB having a plurality of banks; a second TLB having a plurality of entries, each of which having one virtual page number and 2N physical page numbers, wherein N is a natural number; and a selection circuit for outputting an output signal of the first TLB to the second TLB in response to a selection signal, wherein each bank of the first TLB has a plurality of entries, each of which has one virtual page number and one physical page number. The size of a page indicated by a virtual page number of the first TLB is different from the size of a page indicated by a virtual page number of the second TLB.

摘要翻译： 提供了能够降低功耗并提高存储器性能的翻译后备缓冲器（TLB）。 将虚拟地址转换为物理地址的全关联TLB包括具有多个存储体的第一TLB; 具有多个条目的第二TLB，每个条目具有一个虚拟页码和2个N个物理页号，其中N是自然数; 以及选择电路，用于响应于选择信号将第一TLB的输出信号输出到第二TLB，其中第一TLB的每个存储体具有多个条目，每个条目具有一个虚拟页码和一个物理页码 。 由第一TLB的虚拟页码指示的页面的大小与由第二TLB的虚拟页面编号指示的页面的大小不同。

公开(公告)号：US07047362B2

公开(公告)日：2006-05-16

申请号：US10258074

申请日：2001-05-16

申请人： Shin-Dug Kim ,  Jung-Hoon Lee

发明人： Shin-Dug Kim ,  Jung-Hoon Lee

IPC分类号： G06F12/00

CPC分类号： G06F12/0897 ,  G06F12/0864 ,  Y02D10/13

摘要： A method is provided for controlling a cache system. The cache system to be controlled comprises a direct-mapped cache configured with a small block size, and a fully associative spatial buffer configured with a large block, which includes a plurality of small blocks. Where accesses to the direct-mapped cache and the fully associative buffer are misses, data of a missed address and data of adjacent addresses are copied to the large block in the fully associative spatial buffer according to a first-in-first-out (FIFO) process. Furthermore, if one or more small data blocks is accessed among its corresponding large block of data which is to be expelled from the fully associative buffer, the small block(s) accessed is copied to the direct-mapped cache.

摘要翻译： 提供了一种用于控制高速缓存系统的方法。 要控制的缓存系统包括配置有小块大小的直接映射高速缓存器，以及配置有包括多个小块的大块的完全关联空间缓冲器。 在对直接映射高速缓存和完全关联缓冲区的访问丢失的情况下，根据先入先出（FIFO），将缺失地址的数据和相邻地址的数据复制到完全关联空间缓冲器中的大块 ）过程。 此外，如果在要从全关联缓冲器中排出的相应的大量数据块之间访问一个或多个小数据块，则将所访问的小块复制到直接映射高速缓存。

公开(公告)号：US20100061138A1

公开(公告)日：2010-03-11

申请号：US12516192

申请日：2006-12-18

申请人： Byung-Youn Song ,  Jung-Hoon Lee

发明人： Byung-Youn Song ,  Jung-Hoon Lee

IPC分类号： G11C13/00 ,  G01J1/04

CPC分类号： G11C11/42 ,  G11C13/04

摘要： Provided are a photonic memory device, a method of storing data using the photonic memory device, and a photonic sensor device. The photonic memory device comprises a signal line through which a photon is input; a ring resonator receiving a photon through an input gap that is adjacent to the signal line and storing the photon; and a detect line outputting the photon stored in the ring resonator through an output gap that is adjacent to the ring resonator, wherein data is read/written and stored/deleted by the input/output of the photon.

摘要翻译： 提供了光子存储器件，使用光子存储器件存储数据的方法和光子传感器器件。 光子存储器件包括输入光子的信号线; 环形谐振器，通过与信号线相邻并存储光子的输入间隙接收光子; 以及检测线，其通过与环形谐振器相邻的输出间隙输出存储在环形谐振器中的光子，其中数据由光子的输入/输出读/写和存储/删除。

公开(公告)号：US20100041224A1

公开(公告)日：2010-02-18

申请号：US12588064

申请日：2009-10-02

申请人： Yoon-Dong Park ,  Won-Joo Kim ,  June-Mo Koo ,  Suk-Pil Kim ,  Jae-Woong Hyun ,  Jung-Hoon Lee

发明人： Yoon-Dong Park ,  Won-Joo Kim ,  June-Mo Koo ,  Suk-Pil Kim ,  Jae-Woong Hyun ,  Jung-Hoon Lee

IPC分类号： H01L21/28

CPC分类号： H01L27/115 ,  H01L21/764 ,  H01L27/11521 ,  H01L27/11568 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/788 ,  H01L29/792

摘要： The non-volatile memory device may include a semiconductor substrate having a body and a pair of fins. A bridge insulating layer may non-electrically connect upper portions of the pair of fins to define a void between the pair of fins. Outer surfaces of the pair of fins are the surfaces of the pair of fins that do not face the void and inner surfaces of the pair of fins are the surfaces of the pair of fins that do face the void. The non-volatile memory device may further include at least one control gate electrode that may cover at least a portion of outer surfaces of the pair of fins, may extend over the bridge insulating layer, and may be isolated from the semiconductor substrate. At least one pair of gate insulating layers may be between the at least one control gate electrode and the pair of fins, and at least one pair of storage nodes may be between the at least one pair of gate insulating layers and the at least one control gate electrode.

摘要翻译： 非易失性存储器件可以包括具有主体和一对翅片的半导体衬底。 桥式绝缘层可以非电连接该对翅片的上部，以限定一对翅片之间的空隙。 一对翅片的外表面是一对翅片的不面向空隙的表面，并且一对翅片的内表面是面对空隙的一对翅片的表面。 非易失性存储器件还可以包括至少一个可覆盖该对散热片的外表面的至少一部分的控制栅极电极，可以在该桥绝缘层上延伸，并且可以与该半导体衬底隔离。 至少一对栅极绝缘层可以在至少一个控制栅极电极和一对散热片之间，并且至少一对存储节点可以位于至少一对栅极绝缘层之间，并且至少一个控制 栅电极。

公开(公告)号：US20090155592A1

公开(公告)日：2009-06-18

申请号：US12299836

申请日：2007-05-07

申请人： Jung-Hoon Lee ,  Gilbae Choi

发明人： Jung-Hoon Lee ,  Gilbae Choi

IPC分类号： B32B27/14 ,  B05D1/12 ,  B01J19/00

CPC分类号： C08K3/08 ,  C08K3/22 ,  Y10T428/2998 ,  C08L67/02

摘要： According to the present invention, it is possible to easily provide a polymeric macroparticle of which surface is modified with mesoparticles and nanoparticles, by the step of adhering mesoparticles and nanoparticles to the surface of said polymeric macroparticle to form a composite structure of nanoparticle-mesoparticle-macroparticle, and optionally subjecting to a heat treatment to fix said mesoparticles and nanoparticles onto the surface of macroparticle. In addition, a nanoparticle-polymer composite materials can be provide from the above polymeric macroparticles of which surface is modified with mesoparticles and nanoparticles.

摘要翻译： 根据本发明，通过将中等颗粒和纳米颗粒粘附到所述聚合物大颗粒的表面上，可以容易地提供表面用中间颗粒和纳米颗粒进行表面改性的聚合物大颗粒，以形成纳米颗粒 - 中微粒子的复合结构， 大颗粒，并且可选地进行热处理以将所述介晶和纳米颗粒固定在大颗粒的表面上。 此外，可以从其上表面用中间颗粒和纳米颗粒改性的上述聚合物大颗粒提供纳米颗粒 - 聚合物复合材料。

公开(公告)号：US20080035487A1

公开(公告)日：2008-02-14

申请号：US11876180

申请日：2007-10-22

申请人： Oug-Ki Lee ,  Jung-Hoon Lee

发明人： Oug-Ki Lee ,  Jung-Hoon Lee

IPC分类号： C25D5/00

CPC分类号： G01R1/06744 ,  G01R1/06711 ,  G01R1/07307 ,  G01R1/07342 ,  G01R3/00

摘要： Disclosed herein are a probe and a method of making the same, and more particularly to a probe having a minute pitch, with which a probe card corresponding to arrangement of pads formed with a massed shape or other various shapes on a wafer is made, and a method of making the same. The probe having a prescribed thickness and formed in the shape of a flat plate. The probe comprises a body part bent at the middle thereof so that the body part is elastically tensioned or compressed when a tension force or a compression force is applied to the body part at the upper and lower ends thereof, a connection part integrally formed with the lower end of the body part, the connection part being fixed to a substrate, and a tip part integrally formed with the upper end of the body part, the tip part contacting a pad of an element.

摘要翻译： 本文公开了一种探针及其制造方法，更具体地说，涉及一种具有微小间距的探针，其中形成了与晶片上形成有组合形状或其它各种形状的焊盘布置对应的探针卡，以及 制作相同的方法。 探针具有规定的厚度并形成为平板状。 探头包括在其中间弯曲的主体部分，使得当在其上端和下端处对主体部分施加张力或压缩力时，主体部分被弹性张紧或压缩;与主体部分的上端和下端一体形成的连接部， 主体部分的下端，连接部分固定到基底，以及与主体部分的上端一体形成的尖端部分，尖端部分接触元件的垫。

公开(公告)号：US20070284648A1

公开(公告)日：2007-12-13

申请号：US11723222

申请日：2007-03-19

申请人： Yoon-Dong Park ,  Won-Joo Kim ,  June-Mo Koo ,  Suk-Pil Kim ,  Jae-Woong Hyun ,  Jung-Hoon Lee

发明人： Yoon-Dong Park ,  Won-Joo Kim ,  June-Mo Koo ,  Suk-Pil Kim ,  Jae-Woong Hyun ,  Jung-Hoon Lee

IPC分类号： H01L29/788 ,  H01L21/336

CPC分类号： H01L27/115 ,  H01L21/764 ,  H01L27/11521 ,  H01L27/11568 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/788 ,  H01L29/792

摘要： The non-volatile memory device may include a semiconductor substrate having a body and a pair of fins. A bridge insulating layer may non-electrically connect upper portions of the pair of fins to define a void between the pair of fins. Outer surfaces of the pair of fins are the surfaces of the pair of fins that do not face the void and inner surfaces of the pair of fins are the surfaces of the pair of fins that do face the void. The non-volatile memory device may further include at least one control gate electrode that may cover at least a portion of outer surfaces of the pair of fins, may extend over the bridge insulating layer, and may be isolated from the semiconductor substrate. At least one pair of gate insulating layers may be between the at least one control gate electrode and the pair of fins, and at least one pair of storage nodes may be between the at least one pair of gate insulating layers and the at least one control gate electrode.

摘要翻译： 非易失性存储器件可以包括具有主体和一对翅片的半导体衬底。 桥式绝缘层可以非电连接该对翅片的上部，以限定一对翅片之间的空隙。 一对翅片的外表面是一对翅片的不面向空隙的表面，并且一对翅片的内表面是面对空隙的一对翅片的表面。 非易失性存储器件还可以包括至少一个可覆盖该对散热片的外表面的至少一部分的控制栅极电极，可以在该桥绝缘层上延伸，并且可以与该半导体衬底隔离。 至少一对栅极绝缘层可以在至少一个控制栅极电极和一对散热片之间，并且至少一对存储节点可以位于至少一对栅极绝缘层之间，并且至少一个控制 栅电极。

公开(公告)号：US20050103815A1

公开(公告)日：2005-05-19

申请号：US10988559

申请日：2004-11-16

申请人： Jung-Hoon Lee ,  Hyun Cho

发明人： Jung-Hoon Lee ,  Hyun Cho

IPC分类号： B60R7/04 ,  B60R11/00 ,  B60R11/02 ,  H04N5/64 ,  H05K5/02 ,  H01R4/24 ,  H01R4/26 ,  H01R11/20

CPC分类号： B60R11/0235 ,  B60K35/00 ,  B60K37/06 ,  B60K2370/143 ,  B60K2370/1438 ,  B60R11/0211 ,  B60R11/0252 ,  B60R2011/0012 ,  B60R2011/0015 ,  B60R2011/0017

摘要： A case for carrying and mounting an image system in a car includes a first case member for accommodating an image reproducing device therein, a second case member for accommodating a display device therein, a fastening device for selectively fastening the second case member to a top portion of the first case member, and one or more mounting straps for detachably mounting the first case member to a seat in the car. The first case member has an opening formed at the top portion thereof and an edge of the second case member is rotatably connected to the top portion of the first case member, so that the second case member selectively opens or closes the opening. The mounting straps are connected to the first case member.

摘要翻译： 用于将图像系统携带和安装在汽车中的壳体包括用于在其中容纳图像再现装置的第一壳体构件，用于在其中容纳显示装置的第二壳体构件，用于选择性地将第二壳体构件紧固到顶部的紧固装置 的一个或多个安装带，用于将第一壳体部件可拆卸地安装到轿厢中的座椅上。 第一壳体构件具有在其顶部形成的开口，并且第二壳体构件的边缘可旋转地连接到第一壳体构件的顶部，使得第二壳体构件选择性地打开或关闭开口。 安装带连接到第一壳体构件。

公开(公告)号：US07804312B2

公开(公告)日：2010-09-28

申请号：US11569839

申请日：2005-06-14

申请人： Jung-Hoon Lee

发明人： Jung-Hoon Lee

IPC分类号： G01R31/02

CPC分类号： G01R3/00 ,  G01R1/07342

摘要： Disclosed herein are a silicon wafer for probe bonding and a probe bonding method using the same. The silicon wafer for probe bonding is improved in structure to facilitate probe bonding on a probe substrate. The probe bonding method involves bonding supporting beams on the silicon wafer to bumps on the probe substrate. The silicon wafer is formed at a surface thereof with probe tips and supporting beams on an end of each probe tip to have a redetermined arrangement pattern. The silicon wafer is further formed with openings from an upper surface to a lower surface thereof. A portion of each supporting beam opposite to the probe tips protrudes is exposed to the outside through the openings.

摘要翻译： 这里公开了用于探针接合的硅晶片和使用该硅晶片的探针接合方法。 用于探针接合的硅晶片在结构上得到改善以便于在探针基底上的探针接合。 探针接合方法包括将硅晶片上的支撑束粘合到探针基板上的凸起。 硅晶片在其表面处形成有探针尖端和支撑梁，每个探针尖端的端部具有重新确定的布置图案。 硅晶片还形成有从上表面到下表面的开口。 与探针尖端相反的每个支撑梁的一部分突出通过开口暴露于外部。

公开(公告)号：US07560764B2

公开(公告)日：2009-07-14

申请号：US11424524

申请日：2006-06-15

申请人： Byung-Gook Park ,  Jung-Hoon Lee

发明人： Byung-Gook Park ,  Jung-Hoon Lee

IPC分类号： H01L23/62

CPC分类号： H01L29/792 ,  H01L21/28282 ,  H01L29/1033 ,  H01L29/4232 ,  H01L29/66833 ,  H01L29/7854

摘要： A new SONOS memory device is provided, in which a conventional planar surface of multi-dielectric layers (ONO layers) is instead formed with a curved surface such as a cylindrical shape, and included is a method for fabricating the same.A radius of curvature of the upper surface of a blocking oxide can be designed to be larger than that of the lower surface of a tunneling oxide, which restrains electrons from passing through the blocking oxide by back-tunneling on erasing. As a result, a SONOS memory device shows an improvement in erasing speed.

摘要翻译： 提供了一种新的SONOS存储器件，其中多个电介质层（ONO层）的常规平面表面替代地形成有诸如圆柱形的弯曲表面，并且包括其制造方法。 阻挡氧化物的上表面的曲率半径可以被设计为大于隧道氧化物的下表面的曲率半径，其阻止电子在擦除时通过反向隧道穿过阻塞氧化物。 结果，SONOS存储器件显示出擦除速度的改进。