公开(公告)号：US11513879B2

公开(公告)日：2022-11-29

申请号：US16427502

申请日：2019-05-31

Applicant: Seagate Technology LLC

Inventor： Darshana H. Mehta ,  Antoine Khoueir

IPC: G06F11/00 ,  G06F11/07 ,  G11C16/14 ,  G11C16/34 ,  G11C16/26 ,  G06F11/10 ,  G11C16/04

Abstract: Weak erase detection and mitigation techniques are provided that detect permanent failures in solid-state storage devices. One exemplary method comprises obtaining an erase fail bits metric for a solid-state storage device; and detecting a permanent failure in at least a portion of the solid-state storage device causing weak erase failure mode by comparing the erase fail bit metric to a predefined fail bits threshold. In at least one embodiment, the method also comprises mitigating for the permanent failure causing the weak erase failure mode for one or more cells of the solid-state storage device. The mitigating for the permanent failure comprises, for example, changing a status of the one or more cells to a defective state and/or a retired state. The detection of the permanent failure causing the weak erase failure mode comprises, for example, detecting the weak erase failure mode without an erase failure.

公开(公告)号：US11347403B2

公开(公告)日：2022-05-31

申请号：US16560858

申请日：2019-09-04

Applicant: Seagate Technology LLC

Inventor： Darshana H. Mehta ,  Antoine Khoueir

IPC: G06F3/06 ,  G06F11/07 ,  G06F11/20 ,  G11C29/00

Abstract: Technologies are described herein for or extending the lifespan of a solid-state drive by using worn-out MLC flash blocks in SLC mode to extend their useful life. Upon identifying a first storage location in the storage media of an SSD as a candidate for defecting, the first storage location is switched from a first programming mode to a second programming mode, where the second programming mode results in a lower storage density of storage locations than the first programming mode. In conjunction with switching the first storage location to the first programming mode, a second storage location in the storage media is switched from the second programming mode to the first programming mode to ensure that the total capacity of the storage media remains at or above the rated capacity.

公开(公告)号：US11340979B2

公开(公告)日：2022-05-24

申请号：US16729237

申请日：2019-12-27

Applicant: Seagate Technology LLC

Inventor： Mehmet Emin Aklik ,  Antoine Khoueir ,  Darshana H. Mehta ,  Nicholas Lien

IPC: G06F11/07 ,  G11C29/08 ,  G06F11/10 ,  G11C29/52 ,  G11C29/00

Abstract: Read error mitigation in solid-state memory devices. A solid-state drive (SSD) includes a read error mitigation module that monitors one or more memory regions. In response to detecting uncorrectable read errors, memory regions of the memory device may be identified and preemptively retired. Example approaches include identifying a memory region as being suspect such that upon repeated read failures within the memory region, the memory region is retired. Moreover, memory regions may be compared to peer memory regions to determine when to retire a memory region. The read error mitigation module may trigger a test procedure on a memory region to detect the susceptibility of a memory region to read error failures. By detecting read error failures and retirement of a memory regions, data loss and/or data recovery processes may be limited to improve drive performance and reliability.

公开(公告)号：US20200264944A1

公开(公告)日：2020-08-20

申请号：US16427502

申请日：2019-05-31

Applicant: Seagate Technology LLC

Inventor： Darshana H. Mehta ,  Antoine Khoueir

IPC: G06F11/07 ,  G06F11/10 ,  G11C16/14 ,  G11C16/34 ,  G11C16/26

Abstract: Weak erase detection and mitigation techniques are provided that detect permanent failures in solid-state storage devices. One exemplary method comprises obtaining an erase fail bits metric for a solid-state storage device; and detecting a permanent failure in at least a portion of the solid-state storage device causing weak erase failure mode by comparing the erase fail bit metric to a predefined fail bits threshold. In at least one embodiment, the method also comprises mitigating for the permanent failure causing the weak erase failure mode for one or more cells of the solid-state storage device. The mitigating for the permanent failure comprises, for example, changing a status of the one or more cells to a defective state and/or a retired state. The detection of the permanent failure causing the weak erase failure mode comprises, for example, detecting the weak erase failure mode without an erase failure.

公开(公告)号：US10324648B1

公开(公告)日：2019-06-18

申请号：US15495036

申请日：2017-04-24

Applicant: Seagate Technology LLC

Inventor： Ryan James Goss ,  Antoine Khoueir ,  Ara Patapoutian

IPC: G06F11/10 ,  G06F3/06 ,  G11C29/52

Abstract: Systems and methods are disclosed for wear-based access optimization. An apparatus may comprise a circuit configured to perform a data access operation at a target location of a memory, and determine a wear value of the target location. The circuit may compare the wear value to global wear value of other locations of the drive, and adjust data access parameters for the target location based on the comparison.

公开(公告)号：US10254969B2

公开(公告)日：2019-04-09

申请号：US15154786

申请日：2016-05-13

Applicant: SEAGATE TECHNOLOGY LLC

Inventor： Ryan J. Goss ,  Antoine Khoueir ,  Ara Patapoutian

IPC: G06F12/00 ,  G06F3/06 ,  G06F11/10 ,  G11C29/52

Abstract: Systems and methods for improving data refresh in flash memory are described. In one embodiment, the method includes identifying a first garbage collection unit (GCU) of the storage system, computing a parity function in relation to the first GCU, identifying a data impairment in a first block, the first block being from the N blocks in the first GCU, removing the first block from the first GCU after identifying the data impairment in the first block, and recomputing the parity function when the first block is not cloned.

公开(公告)号：US10089170B1

公开(公告)日：2018-10-02

申请号：US15183710

申请日：2016-06-15

Applicant: Seagate Technology LLC

Inventor： Ryan James Goss ,  Antoine Khoueir ,  Ara Patapoutian

IPC: G06F11/07

Abstract: Systems and methods are disclosed for open block management. In certain embodiments, an apparatus may comprise a circuit configured to determine an error sensitivity of a last-written page of a block of a solid state memory that is in an open state where the block has not been fully filled with data. The error sensitivity may include a value that represents a susceptibility to developing data errors while in the open state. The circuit may perform a first error mitigation procedure when the error sensitivity is lower than a first threshold, include increasing an open block timeout period applied to the last-written page. The circuit may perform a second error mitigation procedure when the error sensitivity is higher than the first threshold, including copying data from the block to a new location when a first open block timeout is reached.

公开(公告)号：US09910606B2

公开(公告)日：2018-03-06

申请号：US15078151

申请日：2016-03-23

Applicant: Seagate Technology LLC

Inventor： Antoine Khoueir ,  Ara Patapoutian ,  David S. Ebsen ,  Ryan J. Goss

IPC: G11C29/00 ,  G06F3/06 ,  G06F11/10 ,  G11C29/52

CPC classification number: G06F3/0616 ,  G06F3/0649 ,  G06F3/0653 ,  G06F3/0679 ,  G06F11/1012 ,  G06F11/1068 ,  G11C16/349 ,  G11C29/42 ,  G11C29/4401 ,  G11C29/52

Abstract: Method and apparatus for managing a solid state memory, such as but not limited to a NAND flash memory. In some embodiments, a storage device includes a non-volatile solid state memory and a control circuit configured to transfer user data between the memory and a host device. The control circuit maintains, in a local memory, a data structure indicative of measured readback error rates associated with memory locations in the memory in relation to erasure counts associated with the memory locations. The control circuit retires a subset of the memory locations identified by the data structure from further availability to store user data from the host device responsive to the measured readback error rates, and responsive to the erasure counts of said memory locations indicating the memory has reached an end of life (EOL) condition.

公开(公告)号：US09892798B2

公开(公告)日：2018-02-13

申请号：US14616424

申请日：2015-02-06

Applicant: Seagate Technology LLC

Inventor： Jon Trantham ,  Michael Joseph Steiner ,  Antoine Khoueir

IPC: G11C16/34 ,  G11C5/14 ,  G11C11/56 ,  G11C16/14

CPC classification number: G11C16/3418 ,  G11C5/143 ,  G11C11/5621 ,  G11C16/14 ,  G11C16/3409

Abstract: A data storage device receives a write data command and data. The data is stored in a buffer of the data storage device. The data storage device issues a command complete status indication. After the command complete status indication is issued, the data are stored in a primary memory of the data storage device. The primary memory comprises a first type of non-volatile memory and the buffer comprises a second type of non-volatile memory that is different from the first type of non-volatile memory.

公开(公告)号：US09858002B1

公开(公告)日：2018-01-02

申请号：US15154501

申请日：2016-05-13

Applicant: Seagate Technology LLC

Inventor： Ryan James Goss ,  Antoine Khoueir ,  Ara Patapoutian

IPC: G06F3/06 ,  G11C16/34

CPC classification number: G06F3/0619 ,  G06F3/064 ,  G06F3/0653 ,  G06F3/0679 ,  G11C16/3431

Abstract: Systems and methods are disclosed for open block stability scanning. When a solid state memory block remains in an open state, where the block is only partially filled with written data, for a prolonged period of time, a circuit may perform a scan on the block to determine the stability of the stored data. When the scan indicates that the data is below a stability threshold, the data may be refreshed by reading the data and writing it to a new location. When the scan indicates that the data is above a stability threshold, the circuit may extend the time period in which the block may remain in the open state.