公开(公告)号：US20170301826A1

公开(公告)日：2017-10-19

申请号：US15490492

申请日：2017-04-18

Applicant: Seoul Viosys Co., Ltd.

Inventor： Keum Ju LEE ,  Seom Geun LEE ,  Kyoung Wan KIM ,  Yong Woo RYU ,  Mi Na JANG

IPC: H01L33/14 ,  H01L33/42 ,  H01L33/32 ,  H01L33/10 ,  H01L33/06 ,  H01L33/62 ,  H01L27/15

CPC classification number: H01L33/145 ,  H01L27/15 ,  H01L27/156 ,  H01L33/06 ,  H01L33/10 ,  H01L33/32 ,  H01L33/38 ,  H01L33/42 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2924/00014

Abstract: A light emitting diode includes: a substrate; a semiconductor stack disposed on the substrate and including a lower semiconductor layer, an upper semiconductor layer and an active layer interposed between the lower semiconductor layer and the upper semiconductor layer, the semiconductor stack having an isolation groove exposing the substrate through the upper semiconductor layer, the active layer and the lower semiconductor layer; a first electrode pad and an upper extension portion electrically connected to the upper semiconductor layer; a second electrode pad and a lower extension portion electrically connected to the lower semiconductor layer; a connecting portion connecting the upper extension portion and the lower extension portion to each other across the isolation groove; a first current blocking layer interposed between the lower extension portion and the lower semiconductor layer; and a second current blocking layer interposed between the second electrode pad and the lower semiconductor layer.

公开(公告)号：US20220165914A1

公开(公告)日：2022-05-26

申请号：US17586804

申请日：2022-01-28

Applicant: Seoul Viosys Co., Ltd.

Inventor： Keum Ju LEE ,  Seom Geun LEE ,  Kyoung Wan KIM ,  Yong Woo RYU ,  Mi Na JANG

IPC: H01L33/14 ,  H01L27/15 ,  H01L33/38 ,  H01L33/06 ,  H01L33/10 ,  H01L33/32 ,  H01L33/42 ,  H01L33/62

Abstract: A light emitting diode including a substrate having a first area and a second area defined by an isolation groove line, a semiconductor stack disposed on the substrate and including a lower semiconductor layer, an upper semiconductor layer, an active layer, a first electrode pad electrically connected to the lower semiconductor layer, a second electrode pad electrically connected to the upper semiconductor layer, and a connecting portion electrically connecting the semiconductor stack disposed in the first and second areas to each other, and including a first portion, a second portion, and a third portion extending from a second distal end of the first portion, in which the isolation groove line is disposed between the first and second electrode pads and exposes the substrate, the first portion extends along a first direction substantially parallel to an extending direction of the isolation groove line, and the second and third portions extend in a second direction crossing the first direction.

公开(公告)号：US20200006612A1

公开(公告)日：2020-01-02

申请号：US16453332

申请日：2019-06-26

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jin Woong LEE ,  Kyoung Wan KIM ,  Keum Ju LEE

IPC: H01L33/62 ,  H01L33/24 ,  H01L33/42 ,  H01L33/46

Abstract: A light emitting diode chip includes: a first conductivity type semiconductor layer; a mesa disposed on a partial region of the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer; a transparent electrode being in ohmic contact with the second conductivity type semiconductor layer; a first current spreader being in ohmic contact with the first conductivity type semiconductor layer; a second current spreader electrically connected to the transparent electrode; an insulation layer covering the mesa, the first current spreader and the second current spreader, and including a distributed Bragg reflector. A lateral distance between the first current spreader and the mesa is larger than a thickness of the insulation layer, and a first side surface of the first current spreader close to the mesa is longer than the second side surface thereof.