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    Method of Aligning a Wafer and Method of Monitoring a Lithography Process Including the Same
    1.
    发明申请
    Method of Aligning a Wafer and Method of Monitoring a Lithography Process Including the Same 审中-公开
    晶圆对准方法和包括其的平版印刷术的监控方法

    公开(公告)号：US20110317163A1

    公开(公告)日：2011-12-29

    申请号：US13166327

    申请日：2011-06-22

    申请人： Seung-Yoon Lee ,  Jeong-Ho Yeo ,  Chan Hwang

    发明人： Seung-Yoon Lee ,  Jeong-Ho Yeo ,  Chan Hwang

    IPC分类号： G01B11/14

    CPC分类号： G03F9/7046

    摘要： A method of aligning a wafer includes irradiating light onto a plurality of alignment marks of a wafer, detecting signals outputted from the alignment marks to obtain alignment position offsets, selecting a set of the alignment marks corresponding to the alignment position offsets having a same or similar distribution, and aligning the wafer based the selected alignment marks.

    摘要翻译： 对准晶片的方法包括将光照射到晶片的多个对准标记上，检测从对准标记输出的信号以获得对准位置偏移，选择与具有相同或相似的对准位置偏移对应的一组对准标记 分布和基于所选择的对准标记对齐晶片。

    APPARATUS FOR CREATING AN EXTREME ULTRAVIOLET LIGHT, AN EXPOSING APPARATUS INCLUDING THE SAME, AND ELECTRONIC DEVICES MANUFACTURED USING THE EXPOSING APPARATUS
    2.
    发明申请
    APPARATUS FOR CREATING AN EXTREME ULTRAVIOLET LIGHT, AN EXPOSING APPARATUS INCLUDING THE SAME, AND ELECTRONIC DEVICES MANUFACTURED USING THE EXPOSING APPARATUS 有权
    用于制造极端超紫外线灯的装置，包括其的曝光装置以及使用曝光装置制造的电子装置

    公开(公告)号：US20140078480A1

    公开(公告)日：2014-03-20

    申请号：US13940784

    申请日：2013-07-12

    申请人： Chang-Min Park ,  Joo-On Park ,  Jeong-Ho Yeo

    发明人： Chang-Min Park ,  Joo-On Park ,  Jeong-Ho Yeo

    IPC分类号： G03F7/20

    CPC分类号： G03F7/2006 ,  G03F7/20 ,  G03F7/70025 ,  G03F7/70916 ,  H05G2/003 ,  H05G2/006 ,  H05G2/008

    摘要： An apparatus for creating an EUV light may include a droplet-supplying unit, a laser-irradiating unit, a light-concentrating unit and a guiding unit. The droplet-supplying unit may supply a droplet from which the EUV light may be created. The laser-irradiating unit may irradiate a laser to the droplet supplied from the droplet-supplying unit to create the EUV light. The light-concentrating unit may concentrate the EUV light created by the laser-irradiating unit. The guiding unit may guide the droplet to a position at which the laser may be irradiated. The guiding unit may have at least one gas-spraying hole for spraying a gas to a space between the droplet-supplying unit and the laser irradiation position to form a gas curtain configured to surround the droplet.

    摘要翻译： 用于产生EUV光的装置可以包括液滴供给单元，激光照射单元，光聚集单元和引导单元。 液滴供给单元可以供应可以从其产生EUV光的液滴。 激光照射单元可以将激光照射到从液滴供给单元提供的液滴以产生EUV光。 光聚集单元可以集中由激光照射单元产生的EUV光。 引导单元可以将液滴引导到可以照射激光的位置。 引导单元可以具有用于将气体喷射到液滴供应单元和激光照射位置之间的空间的至少一个气体喷射孔，以形成围绕液滴的气幕。

    Photolithography method including technique of determining distribution of energy of exposure light passing through slit of exposure apparatus
    3.
    发明授权
    Photolithography method including technique of determining distribution of energy of exposure light passing through slit of exposure apparatus 有权
    光刻方法，包括确定通过曝光装置的狭缝的曝光光的能量分布的技术

    公开(公告)号：US08492058B2

    公开(公告)日：2013-07-23

    申请号：US13710643

    申请日：2012-12-11

    申请人： Jin-Seok Heo ,  Seok-Hwan Oh ,  Jeong-Ho Yeo

    发明人： Jin-Seok Heo ,  Seok-Hwan Oh ,  Jeong-Ho Yeo

    IPC分类号： G03F9/00

    CPC分类号： G03F7/20 ,  G03F7/70075 ,  G03F7/70133 ,  G03F7/70608 ,  G03F7/70616

    摘要： The energy distribution of exposure light directed passing through the slit of an exposure apparatus is determined. A photoresist layer on a substrate is exposed over a plurality of shots while changing the intensity of the exposure light for each shot. Then the photoresist layer is developed to form a sample photoresist layer. An image of the developed sample photoresist layer is analyzed for color intensity. Values of the color intensity across a selected one of the shots are correlated with values of the intensity of the exposure light to produce an energy distribution of the exposure light along the length of the slit. The energy distribution is used to change the slit so that a more desirable energy distribution may be realized when the slit is used in a process of manufacturing a semiconductor device.

    摘要翻译： 确定通过曝光装置的狭缝的曝光光的能量分布。 衬底上的光致抗蚀剂层在多次照射下曝光，同时改变每次射击的曝光光的强度。 然后将光致抗蚀剂层显影以形成样品光致抗蚀剂层。 分析显影样品光致抗蚀剂层的图像的颜色强度。 所选择的一个拍摄中的颜色强度的值与曝光光的强度的值相关，以产生沿着狭缝的长度的曝光光的能量分布。 使用能量分布来改变狭缝，使得当在制造半导体器件的工艺中使用狭缝时可以实现更理想的能量分布。

    APPARATUS FOR MANUFACTURING A MASK
    4.
    发明申请
    APPARATUS FOR MANUFACTURING A MASK 有权
    制造面罩的装置

    公开(公告)号：US20120257185A1

    公开(公告)日：2012-10-11

    申请号：US13440112

    申请日：2012-04-05

    申请人： Jin-Seok HEO ,  Chang-Min Park ,  Seok-Hwan Oh ,  Jeong-Ho Yeo

    发明人： Jin-Seok HEO ,  Chang-Min Park ,  Seok-Hwan Oh ,  Jeong-Ho Yeo

    IPC分类号： G03B27/58

    CPC分类号： G03F7/0002 ,  B29C35/0805 ,  B29C2035/0827 ,  B29L2031/737 ,  B82Y10/00 ,  B82Y40/00

    摘要： A method of manufacturing a mask includes dividing an upper surface of a template having a design pattern into a plurality of regions, the template being arranged over a polymer layer on a mask substrate, correcting a distorted region among the regions, pressing the polymer layer with the template to form a mask pattern corresponding to the design pattern on the polymer layer; and curing the mask pattern.

    摘要翻译： 制造掩模的方法包括将具有设计图案的模板的上表面划分为多个区域，模板布置在掩模基板上的聚合物层上，校正区域之间的变形区域，将聚合物层与 该模板形成对应于聚合物层上的设计图案的掩模图案; 并固化掩模图案。

    Method of measuring an overlay of an object
    6.
    发明授权
    Method of measuring an overlay of an object 有权
    测量物体重叠的方法

    公开(公告)号：US08930011B2

    公开(公告)日：2015-01-06

    申请号：US13107166

    申请日：2011-05-13

    申请人： Jin-Seok Heo ,  Seok-Hwan Oh ,  Jeong-Ho Yeo

    发明人： Jin-Seok Heo ,  Seok-Hwan Oh ,  Jeong-Ho Yeo

    IPC分类号： G06F19/00 ,  H01L21/00 ,  G06K9/00 ,  G03F7/20

    CPC分类号： G03F7/70633

    摘要： A method of measuring an overlay of an object is provided. In the method, first information of a first structure may be obtained. A preliminary structure may be formed on the first structure. Second information of the preliminary structure may be obtained. The first information and the second information may be processed to obtain virtual information of a second structure that would be formed on the first structure if a process is performed on the preliminary structure. A virtual overlay between the first structure and the second structure may be measured using the virtual information.

    摘要翻译： 提供了一种测量物体的重叠的方法。 在该方法中，可以获得第一结构的第一信息。 可以在第一结构上形成初步结构。 可以获得初步结构的第二信息。 如果对初步结构执行处理，则可以处理第一信息和第二信息以获得将在第一结构上形成的第二结构的虚拟信息。 可以使用虚拟信息来测量第一结构和第二结构之间的虚拟覆盖。

    Photolithography method including technique of determining distribution of energy of exposure light passing through slit of exposure apparatus
    8.
    发明授权
    Photolithography method including technique of determining distribution of energy of exposure light passing through slit of exposure apparatus 有权
    光刻方法，包括确定通过曝光装置的狭缝的曝光光的能量分布的技术

    公开(公告)号：US08338063B2

    公开(公告)日：2012-12-25

    申请号：US13402902

    申请日：2012-02-23

    申请人： Jin-Seok Heo ,  Seok-Hwan Oh ,  Jeong-Ho Yeo

    发明人： Jin-Seok Heo ,  Seok-Hwan Oh ,  Jeong-Ho Yeo

    IPC分类号： G03F9/00

    CPC分类号： G03F7/20 ,  G03F7/70075 ,  G03F7/70133 ,  G03F7/70608 ,  G03F7/70616

    摘要： The energy distribution of exposure light directed passing through the slit of an exposure apparatus is determined. A photoresist layer on a substrate is exposed over a plurality of shots while changing the intensity of the exposure light for each shot. Then the photoresist layer is developed to form a sample photoresist layer. An image of the developed sample photoresist layer is analyzed for color intensity. Values of the color intensity across a selected one of the shots are correlated with values of the intensity of the exposure light to produce an energy distribution of the exposure light along the length of the slit. The energy distribution is used to change the slit so that a more desirable energy distribution may be realized when the slit is used in a process of manufacturing a semiconductor device.

    摘要翻译： 确定通过曝光装置的狭缝的曝光光的能量分布。 衬底上的光致抗蚀剂层在多次照射下曝光，同时改变每次射击的曝光光的强度。 然后将光致抗蚀剂层显影以形成样品光致抗蚀剂层。 分析显影样品光致抗蚀剂层的图像的颜色强度。 所选择的一个拍摄中的颜色强度的值与曝光光的强度的值相关，以产生沿着狭缝的长度的曝光光的能量分布。 使用能量分布来改变狭缝，使得当在制造半导体器件的工艺中使用狭缝时可以实现更理想的能量分布。

    METHOD AND APPARATUS FOR MEASURING OVERLAY
    9.
    发明申请
    METHOD AND APPARATUS FOR MEASURING OVERLAY 有权
    测量重叠的方法和装置

    公开(公告)号：US20120188543A1

    公开(公告)日：2012-07-26

    申请号：US13349770

    申请日：2012-01-13

    申请人： Seong-Bo Shim ,  Jeong-Ho Yeo ,  Ho-Yeon Kim

    发明人： Seong-Bo Shim ,  Jeong-Ho Yeo ,  Ho-Yeon Kim

    IPC分类号： G01B11/14

    CPC分类号： G03F7/70633

    摘要： A method of measuring an overlay includes generating an original signal using first and second overlay measurement keys that are spaced apart from each other, generating a first spectrum signal by performing Fourier transform of the original signal, generating a second spectrum signal by filtering the first spectrum signal, and generating a corrected signal by performing inverse Fourier transform of the second spectrum signal.

    摘要翻译： 测量覆盖的方法包括使用彼此间隔开的第一和第二覆盖测量键来产生原始信号，通过执行原始信号的傅里叶变换产生第一频谱信号，通过滤波第一频谱产生第二频谱信号 并通过执行第二频谱信号的傅立叶逆变换产生校正信号。

    METHOD OF MEASURING AN OVERLAY OF AN OBJECT
    10.
    发明申请
    METHOD OF MEASURING AN OVERLAY OF AN OBJECT 有权
    测量对象覆盖的方法

    公开(公告)号：US20110320025A1

    公开(公告)日：2011-12-29

    申请号：US13107166

    申请日：2011-05-13

    申请人： Jin-Seok Heo ,  Seok-Hwan Oh ,  Jeong-Ho Yeo

    发明人： Jin-Seok Heo ,  Seok-Hwan Oh ,  Jeong-Ho Yeo

    IPC分类号： G06F17/50

    CPC分类号： G03F7/70633

    摘要： A method of measuring an overlay of an object is provided. In the method, first information of a first structure may be obtained. A preliminary structure may be formed on the first structure. Second information of the preliminary structure may be obtained. The first information and the second information may be processed to obtain virtual information of a second structure that would be formed on the first structure if a process is performed on the preliminary structure. A virtual overlay between the first structure and the second structure may be measured using the virtual information.

    摘要翻译： 提供了一种测量物体的重叠的方法。 在该方法中，可以获得第一结构的第一信息。 可以在第一结构上形成初步结构。 可以获得初步结构的第二信息。 如果对初步结构执行处理，则可以处理第一信息和第二信息以获得将在第一结构上形成的第二结构的虚拟信息。 可以使用虚拟信息来测量第一结构和第二结构之间的虚拟覆盖。