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公开(公告)号：US20120223286A1
公开(公告)日：2012-09-06
申请号：US13259173
申请日：2009-07-30
IPC分类号： H01L45/00
CPC分类号： H01L29/417 , B82Y10/00 , H01L27/101 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/146
摘要： A nanoscale switching device is constructed such that an electroforming process is not needed to condition the device for normal switching operations. The switching device has an active region disposed between two electrodes. The active region has at least one switching layer formed of a switching material capable of transporting dopants under an electric field, and at least one conductive layer formed of a dopant source material containing dopants that can drift into the switching layer under an electric field. The switching layer has a thickness about 6 nm or less.
摘要翻译： 构造纳米级开关器件，使得不需要电铸工艺来调节器件以进行正常的开关操作。 开关装置具有设置在两个电极之间的有源区域。 有源区具有由能够在电场下输送掺杂剂的开关材料形成的至少一个开关层，以及由掺杂剂源材料形成的至少一个导电层，所述掺杂剂源材料含有可在电场下漂移到开关层中的掺杂剂。 开关层的厚度为6nm以下。
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2.发明授权公开(公告)号：US07561320B2
公开(公告)日：2009-07-14
申请号：US11977886
申请日：2007-10-26
CPC分类号： G03H1/02 , G02F2202/30 , G03H1/0005 , G03H1/2294 , G03H2001/0224 , G03H2225/12 , G03H2225/22 , H01L27/2463 , H01L45/04 , H01L45/085 , H01L45/1213 , H01L45/1233 , H01L45/14 , H01L45/141 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/147
摘要： An apparatus and related methods for modulating an electromagnetic radiation beam are described. A composite material is positioned in the path of the radiation beam, the composite material comprising a plurality of commonly oriented metallic first lines spaced apart by less than a wavelength of the radiation beam and a plurality of commonly oriented metallic second lines also spaced apart by less than that wavelength. The second lines are positioned in a crossing arrangement with the first lines, a crosspoint location being defined where each first line crosses each second line. An electrically programmable impedance memory element is positioned at each crosspoint location and is electrically coupled between the first and second lines corresponding to that crosspoint location, each impedance memory element having an electrically programmed state. The composite material modulates the radiation beam according to the electrically programmed states of the impedance memory elements.
摘要翻译： 描述了用于调制电磁辐射束的装置和相关方法。 复合材料定位在辐射束的路径中，复合材料包括多个共同定向的金属第一线，其间隔开小于辐射束的波长，以及多个共同定向的金属第二线，其间隔开较少 比那个波长。 第二行定位成与第一行的交叉排列，交叉点位置被定义为每个第一行与每个第二行交叉的位置。 电可编程阻抗存储元件位于每个交叉点位置处，并且电耦合在对应于该交叉点位置的第一和第二线之间，每个阻抗存储元件具有电编程状态。 复合材料根据阻抗存储器元件的电编程状态来调制辐射束。
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公开(公告)号：US08546898B2
公开(公告)日：2013-10-01
申请号：US13259196
申请日：2009-09-29
CPC分类号： H01L27/14609 , G11C7/005 , G11C13/0007 , G11C13/0014 , G11C13/047 , G11C2213/55 , G11C2213/56 , G11C2213/77 , H01L27/14621 , H01L27/307
摘要： An optoelectronic memory cell has a transparent top electrode, a photoactive layer, a latching layer, and a bottom electrode. The photoactive layer absorbs photons transmitted through the top electrode and generates charge carriers. During light exposure, the latching layer changes its resistance under an applied electric field in response to the generation of charge carriers in the photoactive layer.
摘要翻译： 光电存储单元具有透明的顶电极，光敏层，闭锁层和底电极。 光活性层吸收通过顶部电极传输的光子并产生电荷载体。 在曝光期间，响应于光活性层中的电荷载体的产生，锁存层在施加的电场下改变其电阻。
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公开(公告)号：US08519372B2
公开(公告)日：2013-08-27
申请号：US13259173
申请日：2009-07-30
IPC分类号： H01L29/02
CPC分类号： H01L29/417 , B82Y10/00 , H01L27/101 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/146
摘要： A nanoscale switching device is constructed such that an electroforming process is not needed to condition the device for normal switching operations. The switching device has an active region disposed between two electrodes. The active region has at least one switching layer formed of a switching material capable of transporting dopants under an electric field, and at least one conductive layer formed of a dopant source material containing dopants that can drift into the switching layer under an electric field. The switching layer has a thickness about 6 nm or less.
摘要翻译： 构造纳米级开关器件，使得不需要电铸工艺来调节器件以进行正常的开关操作。 开关装置具有设置在两个电极之间的有源区域。 有源区具有由能够在电场下输送掺杂剂的开关材料形成的至少一个开关层，以及由掺杂剂源材料形成的至少一个导电层，所述掺杂剂源材料含有可在电场下漂移到开关层中的掺杂剂。 开关层的厚度为6nm以下。
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公开(公告)号：US20120012810A1
公开(公告)日：2012-01-19
申请号：US13259196
申请日：2009-10-29
CPC分类号： H01L27/14609 , G11C7/005 , G11C13/0007 , G11C13/0014 , G11C13/047 , G11C2213/55 , G11C2213/56 , G11C2213/77 , H01L27/14621 , H01L27/307
摘要： An optoelectronic memory cell has a transparent top electrode, a photoactive layer, a latching layer, and a bottom electrode. The photoactive layer absorbs photons transmitted through the top electrode and generates charge carriers. During light exposure, the latching layer changes its resistance under an applied electric field in response to the generation of charge carriers in the photoactive layer.
摘要翻译： 光电存储单元具有透明的顶电极，光敏层，闭锁层和底电极。 光活性层吸收通过顶部电极传输的光子并产生电荷载体。 在曝光期间，响应于光活性层中的电荷载体的产生，锁存层在施加的电场下改变其电阻。
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6.发明申请公开(公告)号：US20090109516A1
公开(公告)日：2009-04-30
申请号：US11977886
申请日：2007-10-26
IPC分类号： G02B26/00
CPC分类号： G03H1/02 , G02F2202/30 , G03H1/0005 , G03H1/2294 , G03H2001/0224 , G03H2225/12 , G03H2225/22 , H01L27/2463 , H01L45/04 , H01L45/085 , H01L45/1213 , H01L45/1233 , H01L45/14 , H01L45/141 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/147
摘要： An apparatus and related methods for modulating an electromagnetic radiation beam are described. A composite material is positioned in the path of the radiation beam, the composite material comprising a plurality of commonly oriented metallic first lines spaced apart by less than a wavelength of the radiation beam and a plurality of commonly oriented metallic second lines also spaced apart by less than that wavelength. The second lines are positioned in a crossing arrangement with the first lines, a crosspoint location being defined where each first line crosses each second line. An electrically programmable impedance memory element is positioned at each crosspoint location and is electrically coupled between the first and second lines corresponding to that crosspoint location, each impedance memory element having an electrically programmed state. The composite material modulates the radiation beam according to the electrically programmed states of the impedance memory elements.
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公开(公告)号：US20090273293A1
公开(公告)日：2009-11-05
申请号：US12243117
申请日：2008-10-01
CPC分类号： H01L33/0037 , H01L33/20 , H01L33/385 , H05B33/0818 , H05B33/0821 , H05B37/0272
摘要： One embodiment of the present invention relates to a light-emitting diode having one or more light-emitting layers, a pair of electrodes disposed on the light-emitting diode so that an operating voltage can be applied to generate light from the one or more light-emitting layers, and at least one external electrode in electronic communication with the one or more light-emitting layers. Applying an appropriate voltage to the at least one external electrodes at about the time the operating voltage is terminated extracts excess electrons from the one or more light-emitting layers and reduces the duration of electron-hole recombination during the time period over which the operating voltage is turned off.
摘要翻译： 本发明的一个实施例涉及具有一个或多个发光层的发光二极管，设置在发光二极管上的一对电极，使得可以施加工作电压以产生来自一个或多个光的光 以及与所述一个或多个发光层电连通的至少一个外部电极。 大约在工作电压终止时将适当的电压施加到至少一个外部电极，从一个或多个发光层提取出多余的电子，并减少在工作电压的时间段内的电子 - 空穴复合的持续时间 已关闭
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公开(公告)号：US20080102319A1
公开(公告)日：2008-05-01
申请号：US11580641
申请日：2006-10-13
IPC分类号： G11B5/66
摘要： A composite material exhibiting at least one of a negative effective permittivity and a negative effective permeability for incident radiation at an operating wavelength is described. The composite material comprises a dielectric layer generally parallel to a dielectric layer plane, and further comprises a first plurality of nanowire pairs disposed in the dielectric layer. Each of the first plurality of nanowire pairs comprises substantially parallel conductive nanowires of short length and separation relative to the operating wavelength. Each of the first plurality of nanowire pairs is substantially coplanar with a first plane substantially parallel to the dielectric layer plane.
摘要翻译： 描述了在工作波长处表现入射辐射的负有效介电常数和负有效磁导率中的至少一种的复合材料。 复合材料包括大致平行于电介质层平面的电介质层，并且还包括布置在电介质层中的第一多个纳米线对。 第一多个纳米线对中的每一个包括相对于工作波长的短长度和间隔的基本上平行的导电纳米线。 第一多个纳米线对中的每一个基本上与基本平行于介电层平面的第一平面共面。
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公开(公告)号：US20080087973A1
公开(公告)日：2008-04-17
申请号：US11580385
申请日：2006-10-12
申请人： Shih-Yuan Wang , Alexandre Bratkovski , Wei Wu
发明人： Shih-Yuan Wang , Alexandre Bratkovski , Wei Wu
CPC分类号： H01Q15/0086 , H01Q3/44
摘要： A composite material for providing at least one of a negative effective permeability and a negative effective permittivity for incident radiation of at least one wavelength is described. The composite material comprises a plurality of three-dimensional resonant cells disposed across a first substrate. Each three-dimensional resonant cell comprises a base substantially parallel to the substrate and at least three sidewalls upwardly extending therefrom. Each upwardly extending sidewall comprising a sidewall substrate having at least one conductor patterned thereon. Each upwardly extending sidewall is fabricated by forming the sidewall substrate as a substantially horizontal layer above the first substrate, lithographically patterning the sidewall substrate with the at least one conductor while horizontally disposed above the first substrate, and tilting up the sidewall substrate to the upwardly extending position.
摘要翻译： 描述了用于为至少一个波长的入射辐射提供负有效磁导率和负有效介电常数中的至少一个的复合材料。 复合材料包括跨越第一基板设置的多个三维谐振单元。 每个三维谐振单元包括基本上平行于基板的基座和从其向上延伸的至少三个侧壁。 每个向上延伸的侧壁包括具有图案化的至少一个导体的侧壁基板。 每个向上延伸的侧壁通过将侧壁基底形成为在第一基底之上的基本上水平的层来制造，在水平地设置在第一基底之上的情况下，利用至少一个导体光刻地图案化侧壁基底，并且将侧壁基底向上延伸 位置。
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公开(公告)号：US07245370B2
公开(公告)日：2007-07-17
申请号：US11030733
申请日：2005-01-06
CPC分类号： G01N21/658
摘要： A SERS-active structure is disclosed that includes a substrate and at least two nanowires disposed on the substrate. Each of the at least two nanowires has a first end and a second end, the first end being attached to the substrate and the second end having a SERS-active tip. A SERS system is also disclosed that includes a SERS-active structure. Also disclosed are methods for forming a SERS-active structure and methods for performing SERS with SERS-active structures.
摘要翻译： 公开了一种SERS-活性结构，其包括衬底和设置在衬底上的至少两个纳米线。 所述至少两个纳米线中的每一个具有第一端和第二端，所述第一端附接到所述基底，所述第二端具有SERS活性末端。 还公开了包括SERS活性结构的SERS系统。 还公开了形成SERS活性结构的方法和用SERS活性结构进行SERS的方法。
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