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16 条记录 (耗时 0.024 秒)

    Large area silicon cone arrays fabrication and cone based nanostructure modification
    1.
    发明授权
    Large area silicon cone arrays fabrication and cone based nanostructure modification 有权
    大面积硅锥阵列制造和锥形纳米结构改性

    公开(公告)号：US06761803B2

    公开(公告)日：2004-07-13

    申请号：US10023418

    申请日：2001-12-17

    申请人： Shuit-Tong Lee ,  Igor Bello ,  Chun-Sing Lee ,  Quan Li ,  Naigui Shang

    发明人： Shuit-Tong Lee ,  Igor Bello ,  Chun-Sing Lee ,  Quan Li ,  Naigui Shang

    IPC分类号： C23C1434

    CPC分类号： H01J9/025 ,  H01J2237/3151

    摘要： A method and an apparatus have been developed to fabricate large area uniform silicon cone arrays using different kinds of ion-beam sputtering methods. The apparatus includes silicon substrate as the silicon source, and metal foils are used as catalyst. Methods of surface modification of the as-synthesized silicon cones for field emission application have also been developed, including hydrofluoric acid etching, annealing and low work-function metal coating. Nano-structure modification based on silicon cones takes advantage of the fact that the cone tip consists of metal/metal siliside, which can be used as catalyst and template for nanowires growth. A method and an apparatus have been developed to grow silicon oxide/silicon nanowires on tips of the silicon cones.

    摘要翻译： 已经开发了使用不同种类的离子束溅射方法制造大面积均匀硅锥阵列的方法和装置。 该装置包括作为硅源的硅衬底，并且使用金属箔作为催化剂。 还开发了用于场致发射应用的合成硅锥体的表面改性方法，包括氢氟酸蚀刻，退火和低功函数金属涂层。 基于硅锥的纳米结构改性利用了锥尖由金属/金属硅化物组成的事实，其可以用作纳米线生长的催化剂和模板。 已经开发了一种在硅锥顶端生长氧化硅/硅纳米线的方法和装置。

    Electroluminescent devices
    8.
    发明授权
    Electroluminescent devices 有权
    电致发光器件

    公开(公告)号：US07232617B2

    公开(公告)日：2007-06-19

    申请号：US10357616

    申请日：2003-02-04

    申请人： Shuit-Tong Lee ,  Chun-Sing Lee ,  Peng-Fei Wang ,  Bao-Xiu Mi

    发明人： Shuit-Tong Lee ,  Chun-Sing Lee ,  Peng-Fei Wang ,  Bao-Xiu Mi

    IPC分类号： H01J1/62 ,  C07D209/744

    CPC分类号： H01L51/5048 ,  C07D209/48 ,  C07D209/88 ,  C09K11/06 ,  C09K2211/1029 ,  H05B33/14 ,  Y10S428/917

    摘要： A compound of formula [I]: X—R[I] wherein X represents the group: and R is either (i) represented by the formula [II] wherein n is 1 or 2, and the or each R7 group is independently selected from the group consisting of hydrogen and halogen atoms, cyano, nitro, mercapto, carbonyl and sulfone groups, and optionally substituted alkyl, haloalkyl, hydroxyalkyl, aryl, alkoxy, aryloxy, alkylamino, arylamino, alkylthio, arylthio, ester, siloxy, cyclic hydrocarbon and heterocyclic groups; or (ii) is selected from the group consisting of optionally substituted alkyl, hydroxyalkyl, aryl, cyclic hydrocarbon and heterocyclic groups; wherein in each case R1–R6 are each independently selected from the group consisting of hydrogen and halogen atoms, cyano, nitro, mercapto, carbonyl and sulfone groups, and optionally substituted alkyl, haloalkyl, hydroxyalkyl, aryl, alkoxy, aryloxy, alkylamino, arylamino, alkylthio, arylthio, ester, siloxy, cyclic hydrocarbon and heterocyclic groups. The compounds are useful as hole-transporting materials in electroluminescence devices.

    摘要翻译： 式[I]的化合物：<？in-line-formula description =“In-line Formulas”end =“lead”？> XR [I] <？in-line-formula description =“In-line Formulas”end =“尾”→其中X表示基团：R是（i）由式[II]表示，其中n为1或2，并且每个R 7

    High-qualty aluminum-doped zinc oxide layer as transparent conductive electrode for organic light-emitting devices
    9.
    发明授权
    High-qualty aluminum-doped zinc oxide layer as transparent conductive electrode for organic light-emitting devices 有权
    高质量的铝掺杂氧化锌层作为有机发光器件的透明导电电极

    公开(公告)号：US06917158B2

    公开(公告)日：2005-07-12

    申请号：US10093940

    申请日：2002-03-08

    申请人： Shuit-Tong Lee ,  Xin Jiang ,  Chun-Sing Lee ,  Fu-Lung Wong

    发明人： Shuit-Tong Lee ,  Xin Jiang ,  Chun-Sing Lee ,  Fu-Lung Wong

    IPC分类号： H01L51/52 ,  H05B33/00

    CPC分类号： H01L51/5206

    摘要： An organic light-emitting diode is described in which the anode comprises midfrequency magnetron sputtered aluminum-doped zinc oxide to increase the device stability and to decrease the material cost. Due the novel deposition technique, ZnO:Al film with ITO-like electrical conductivity can be deposited and improved device performance, especially the long-term stability can be obtained which are attributed to the modification of the ZnO:Al conductivity and surface chemistry.

    摘要翻译： 描述了一种有机发光二极管，其中阳极包括中频磁控溅射铝掺杂氧化锌以增加器件稳定性并降低材料成本。 由于新颖的沉积技术，可以沉积具有ITO样导电性的ZnO：Al膜，并提高器件性能，特别是由于ZnO：Al导电性和表面化学性质的改变，可以获得长期稳定性。