MEMS MASS BIAS TO TRACK CHANGES IN BIAS CONDITIONS AND REDUCE EFFECTS OF FLICKER NOISE
    1.
    发明申请
    MEMS MASS BIAS TO TRACK CHANGES IN BIAS CONDITIONS AND REDUCE EFFECTS OF FLICKER NOISE 有权
    MEMS大量偏差来跟踪偏差条件下的变化并降低闪烁噪声的影响

    公开(公告)号:US20140176251A1

    公开(公告)日:2014-06-26

    申请号:US13721642

    申请日:2012-12-20

    CPC classification number: H03B5/362 H03B5/366

    Abstract: A technique for tracking changes in bias conditions of a microelectromechanical system (MEMS) device includes applying an electrode bias signal to an electrode of the MEMS device. The technique includes applying a mass bias signal to a mass of the MEMS device suspended from a substrate of the MEMS device. The technique includes generating the mass bias signal based on a target mass-to-electrode bias signal level and a signal level of the electrode bias signal.

    Abstract translation: 用于跟踪微机电系统(MEMS)器件的偏置条件变化的技术包括将电极偏置信号施加到MEMS器件的电极。 该技术包括将质量偏置信号施加到从MEMS器件的衬底悬挂的MEMS器件的质量。 该技术包括基于目标质量对电极偏置信号电平和电极偏置信号的信号电平产生质量偏置信号。

    MEMS mass bias to track changes in bias conditions and reduce effects of flicker noise
    2.
    发明授权
    MEMS mass bias to track changes in bias conditions and reduce effects of flicker noise 有权
    MEMS质量偏移以跟踪偏置条件的变化并减少闪烁噪声的影响

    公开(公告)号:US09252707B2

    公开(公告)日:2016-02-02

    申请号:US13721642

    申请日:2012-12-20

    CPC classification number: H03B5/362 H03B5/366

    Abstract: A technique for tracking changes in bias conditions of a microelectromechanical system (MEMS) device includes applying an electrode bias signal to an electrode of the MEMS device. The technique includes applying a mass bias signal to a mass of the MEMS device suspended from a substrate of the MEMS device. The technique includes generating the mass bias signal based on a target mass-to-electrode bias signal level and a signal level of the electrode bias signal.

    Abstract translation: 用于跟踪微机电系统(MEMS)器件的偏置条件变化的技术包括将电极偏置信号施加到MEMS器件的电极。 该技术包括将质量偏置信号施加到从MEMS器件的衬底悬挂的MEMS器件的质量。 该技术包括基于目标质量对电极偏置信号电平和电极偏置信号的信号电平产生质量偏置信号。

    Compensation of changes in MEMS capacitive transduction
    3.
    发明授权
    Compensation of changes in MEMS capacitive transduction 有权
    MEMS电容转换的变化补偿

    公开(公告)号:US09000833B2

    公开(公告)日:2015-04-07

    申请号:US13786686

    申请日:2013-03-06

    Abstract: A method for compensating for strain on a MEMS device includes generating a signal indicative of a strain on the MEMS device in a first mode of operating a system including the MEMS device. The method includes compensating for the strain in a second mode of operating the system based on the signal. Generating the signal may include comparing an indicator of a resonant frequency of the MEMS device to a predetermined resonant frequency of the MEMS device. Generating the signal may include comparing a first output of a strain-sensitive device to a second output of a strain-insensitive device and generating an indicator thereof. Generating the signal may include sensing a first capacitive transduction of strain-sensitive electrodes of the MEMS device in the first mode and generating the signal based thereon. The strain-sensitive electrodes of the MEMS device may be disabled in the second mode.

    Abstract translation: 用于补偿MEMS器件上的应变的方法包括在以包括MEMS器件的系统操作的第一模式中产生指示MEMS器件上的应变的信号。 该方法包括基于该信号补偿在操作系统的第二模式中的应变。 生成信号可以包括将MEMS器件的谐振频率的指示符与MEMS器件的预定谐振频率进行比较。 生成信号可以包括将应变敏感器件的第一输出与应变不敏感器件的第二输出进行比较并产生其指示符。 生成信号可以包括在第一模式中感测MEMS器件的应变敏感电极的第一电容转换并且基于其产生信号。 可以在第二模式中禁用MEMS器件的应变敏感电极。

    Use of electronic attenuator for MEMS oscillator overdrive protection
    4.
    发明授权
    Use of electronic attenuator for MEMS oscillator overdrive protection 有权
    电子衰减器用于MEMS振荡器超速保护

    公开(公告)号:US08981860B2

    公开(公告)日:2015-03-17

    申请号:US13721630

    申请日:2012-12-20

    CPC classification number: H03B5/30 B81B7/02 H03B2200/001

    Abstract: An apparatus includes a microelectromechanical system (MEMS) device configured as part of an oscillator. The MEMS device includes a mass suspended from a substrate of the MEMS, a first electrode configured to provide a first signal based on a displacement of the mass, and a second electrode configured to receive a second signal based on the first signal. The apparatus includes an amplifier coupled to the first electrode and a first node. The amplifier is configured to generate an output signal, the output signal being based on the first signal and a first gain. The apparatus includes an attenuator configured to attenuate the output signal based on a second gain and provide as the second signal an attenuated version of the output signal.

    Abstract translation: 一种装置包括被配置为振荡器的一部分的微机电系统(MEMS)装置。 MEMS器件包括从MEMS的衬底悬挂的质量,第一电极,被配置为基于质量的位移提供第一信号,以及第二电极,被配置为基于第一信号接收第二信号。 该装置包括耦合到第一电极和第一节点的放大器。 放大器被配置为产生输出信号,输出信号基于第一信号和第一增益。 该装置包括衰减器,其被配置为基于第二增益来衰减输出信号,并将输出信号的衰减版本提供为第二信号。

    COMPENSATION OF CHANGES IN MEMS CAPACITIVE TRANSDUCTION
    5.
    发明申请
    COMPENSATION OF CHANGES IN MEMS CAPACITIVE TRANSDUCTION 有权
    MEMS电容传输变化的补偿

    公开(公告)号:US20140253219A1

    公开(公告)日:2014-09-11

    申请号:US13786686

    申请日:2013-03-06

    Abstract: A method for compensating for strain on a MEMS device includes generating a signal indicative of a strain on the MEMS device in a first mode of operating a system including the MEMS device. The method includes compensating for the strain in a second mode of operating the system based on the signal. Generating the signal may include comparing an indicator of a resonant frequency of the MEMS device to a predetermined resonant frequency of the MEMS device. Generating the signal may include comparing a first output of a strain-sensitive device to a second output of a strain-insensitive device and generating an indicator thereof. Generating the signal may include sensing a first capacitive transduction of strain-sensitive electrodes of the MEMS device in the first mode and generating the signal based thereon. The strain-sensitive electrodes of the MEMS device may be disabled in the second mode.

    Abstract translation: 用于补偿MEMS器件上的应变的方法包括在以包括MEMS器件的系统操作的第一模式中产生指示MEMS器件上的应变的信号。 该方法包括基于该信号补偿在操作系统的第二模式中的应变。 生成信号可以包括将MEMS器件的谐振频率的指示符与MEMS器件的预定谐振频率进行比较。 生成信号可以包括将应变敏感器件的第一输出与应变不敏感器件的第二输出进行比较并产生其指示符。 生成信号可以包括在第一模式中感测MEMS器件的应变敏感电极的第一电容转换并且基于其产生信号。 可以在第二模式中禁用MEMS器件的应变敏感电极。

    USE OF ELECTRONIC ATTENUATOR FOR MEMS OSCILLATOR OVERDRIVE PROTECTION
    6.
    发明申请
    USE OF ELECTRONIC ATTENUATOR FOR MEMS OSCILLATOR OVERDRIVE PROTECTION 有权
    电子衰减器用于MEMS振荡器过载保护的使用

    公开(公告)号:US20140176248A1

    公开(公告)日:2014-06-26

    申请号:US13721630

    申请日:2012-12-20

    CPC classification number: H03B5/30 B81B7/02 H03B2200/001

    Abstract: An apparatus includes a microelectromechanical system (MEMS) device configured as part of an oscillator. The MEMS device includes a mass suspended from a substrate of the MEMS, a first electrode configured to provide a first signal based on a displacement of the mass, and a second electrode configured to receive a second signal based on the first signal. The apparatus includes an amplifier coupled to the first electrode and a first node. The amplifier is configured to generate an output signal, the output signal being based on the first signal and a first gain. The apparatus includes an attenuator configured to attenuate the output signal based on a second gain and provide as the second signal an attenuated version of the output signal.

    Abstract translation: 一种装置包括被配置为振荡器的一部分的微机电系统(MEMS)装置。 MEMS器件包括从MEMS的衬底悬挂的质量,第一电极,被配置为基于质量的位移提供第一信号,以及第二电极,被配置为基于第一信号接收第二信号。 该装置包括耦合到第一电极和第一节点的放大器。 放大器被配置为产生输出信号,输出信号基于第一信号和第一增益。 该装置包括衰减器,其被配置为基于第二增益来衰减输出信号,并将输出信号的衰减版本提供为第二信号。

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