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    Semiconductor device and method of manufacturing the same
    1.
    发明申请
    Semiconductor device and method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US20070123062A1

    公开(公告)日：2007-05-31

    申请号：US11605092

    申请日：2006-11-28

    申请人： Sung-Kwan Kang ,  Jong-Wook Lee ,  Yong-Hoon Son ,  Yu-Gyun Shin ,  Jun-Ho Lee

    发明人： Sung-Kwan Kang ,  Jong-Wook Lee ,  Yong-Hoon Son ,  Yu-Gyun Shin ,  Jun-Ho Lee

    IPC分类号： H01L21/336 ,  H01L29/76 ,  H01L21/00

    CPC分类号： H01L29/66795 ,  H01L29/7851

    摘要： In a semiconductor device and a method of manufacturing the semiconductor device, a plug and a channel structure are formed. The plug fills an opening and the channel structure extends upwardly from the plug. The channel structure has a substantially vertical sidewall. The opening is formed through an insulation structure located on a substrate. The plug and the channel structure comprise a material in a single crystalline state that is changed from an amorphous state by an irradiation of a laser beam. The channel structure is doped with impurities such as boron, phosphorus or arsenic.

    摘要翻译： 在半导体器件和半导体器件的制造方法中，形成插头和沟道结构。 塞子填充开口并且通道结构从插头向上延伸。 通道结构具有基本垂直的侧壁。 开口通过位于基板上的绝缘结构形成。 塞子和通道结构包括通过激光束的照射从非晶状态改变的单晶状态的材料。 通道结构掺杂有杂质如硼，磷或砷。

    Method for fabricating a semiconductor device
    2.
    发明授权
    Method for fabricating a semiconductor device 有权
    半导体器件的制造方法

    公开(公告)号：US07560319B2

    公开(公告)日：2009-07-14

    申请号：US11730262

    申请日：2007-03-30

    申请人： Sung-Kwan Kang ,  Yu-Gyun Shin ,  Jong-Wook Lee ,  Yong-Hoon Son

    发明人： Sung-Kwan Kang ,  Yu-Gyun Shin ,  Jong-Wook Lee ,  Yong-Hoon Son

    IPC分类号： H01L21/84

    CPC分类号： H01L21/823807 ,  H01L21/823878 ,  H01L21/84

    摘要： A method of fabricating a semiconductor device includes forming an insulation layer structure on a single-crystalline silicon substrate, forming a first insulation layer structure pattern comprising a first opening by etching a portion of the insulation layer structure, filling the first opening with a non-single-crystalline silicon layer, and forming a single-crystalline silicon pattern by irradiating a first laser beam onto the non-single-crystalline silicon layer. The method also includes forming a second insulation layer structure pattern comprising a second opening by etching a portion of the first insulation layer structure, filling the second opening with a non-single-crystalline silicon-germanium layer, and forming a single-crystalline silicon-germanium pattern by irradiating a second laser beam onto the non-single-crystalline silicon-germanium layer.

    摘要翻译： 一种制造半导体器件的方法包括在单晶硅衬底上形成绝缘层结构，通过蚀刻绝缘层结构的一部分形成包括第一开口的第一绝缘层结构图案， 单晶硅层，并且通过将第一激光束照射到非单晶硅层上而形成单晶硅图案。 该方法还包括通过蚀刻第一绝缘层结构的一部分来形成包括第二开口的第二绝缘层结构图案，用非单晶硅锗层填充第二开口，以及形成单晶硅 - 锗图案，通过将第二激光束照射到非单晶硅 - 锗层上。

    Semiconductor device and method of manufacturing the same
    4.
    发明授权
    Semiconductor device and method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US07396761B2

    公开(公告)日：2008-07-08

    申请号：US11605092

    申请日：2006-11-28

    申请人： Sung-Kwan Kang ,  Jong-Wook Lee ,  Yong-Hoon Son ,  Yu-Gyun Shin ,  Jun-Ho Lee

    发明人： Sung-Kwan Kang ,  Jong-Wook Lee ,  Yong-Hoon Son ,  Yu-Gyun Shin ,  Jun-Ho Lee

    IPC分类号： H01L21/336 ,  H01L21/4763 ,  H01L21/44

    CPC分类号： H01L29/66795 ,  H01L29/7851

    摘要： In a semiconductor device and a method of manufacturing the semiconductor device, a plug and a channel structure are formed. The plug fills an opening and the channel structure extends upwardly from the plug. The channel structure has a substantially vertical sidewall. The opening is formed through an insulation structure located on a substrate. The plug and the channel structure comprise a material in a single crystalline state that is changed from an amorphous state by an irradiation of a laser beam. The channel structure is doped with impurities such as boron, phosphorus or arsenic.

    摘要翻译： 在半导体器件和半导体器件的制造方法中，形成插头和沟道结构。 塞子填充开口并且通道结构从插头向上延伸。 通道结构具有基本垂直的侧壁。 开口通过位于基板上的绝缘结构形成。 塞子和通道结构包括通过激光束的照射从非晶状态改变的单晶状态的材料。 通道结构掺杂有杂质如硼，磷或砷。

    Method for fabricating a semiconductor device
    5.
    发明申请
    Method for fabricating a semiconductor device 有权
    半导体器件的制造方法

    公开(公告)号：US20070231976A1

    公开(公告)日：2007-10-04

    申请号：US11730262

    申请日：2007-03-30

    申请人： Sung-Kwan Kang ,  Yu-Gyun Shin ,  Jong-Wook Lee ,  Yong-Hoon Son

    发明人： Sung-Kwan Kang ,  Yu-Gyun Shin ,  Jong-Wook Lee ,  Yong-Hoon Son

    IPC分类号： H01L21/84

    CPC分类号： H01L21/823807 ,  H01L21/823878 ,  H01L21/84

    摘要： A method of fabricating a semiconductor device includes forming an insulation layer structure on a single-crystalline silicon substrate, forming a first insulation layer structure pattern comprising a first opening by etching a portion of the insulation layer structure, filling the first opening with a non-single-crystalline silicon layer, and forming a single-crystalline silicon pattern by irradiating a first laser beam onto the non-single-crystalline silicon layer. The method also includes forming a second insulation layer structure pattern comprising a second opening by etching a portion of the first insulation layer structure, filling the second opening with a non-single-crystalline silicon-germanium layer, and forming a single-crystalline silicon-germanium pattern by irradiating a second laser beam onto the non-single-crystalline silicon-germanium layer.

    摘要翻译： 一种制造半导体器件的方法包括在单晶硅衬底上形成绝缘层结构，通过蚀刻绝缘层结构的一部分形成包括第一开口的第一绝缘层结构图案， 单晶硅层，并且通过将第一激光束照射到非单晶硅层上而形成单晶硅图案。 该方法还包括通过蚀刻第一绝缘层结构的一部分来形成包括第二开口的第二绝缘层结构图案，用非单晶硅锗层填充第二开口，以及形成单晶硅 - 锗图案，通过将第二激光束照射到非单晶硅 - 锗层上。

    Stacked semiconductor device and related method
    6.
    发明申请
    Stacked semiconductor device and related method 审中-公开
    叠层半导体器件及相关方法

    公开(公告)号：US20070007532A1

    公开(公告)日：2007-01-11

    申请号：US11474384

    申请日：2006-06-26

    申请人： Sung-Kwan Kang ,  Yu-Gyun Shin ,  Jong-Wook Lee ,  Yong-Hoon Son

    发明人： Sung-Kwan Kang ,  Yu-Gyun Shin ,  Jong-Wook Lee ,  Yong-Hoon Son

    IPC分类号： H01L29/10

    CPC分类号： H01L21/8221 ,  H01L27/0688 ,  H01L27/11 ,  H01L27/1104

    摘要： A stacked semiconductor device and a method for manufacturing the stacked semiconductor device are disclosed. The stacked semiconductor device comprises a seed layer doped with first impurities, a multilayer insulation pattern disposed on the seed layer comprising at least two insulation interlayer patterns stacked vertically on the seed layer and an opening. The stacked semiconductor device further comprises at least one active thin layer, wherein each of the at least one active thin layers is disposed on one of the at least two insulation interlayer patterns of the multilayer insulation pattern, and wherein the opening exposes a side surface of each of the at least one active thin layers. The stacked semiconductor device still further comprises and a first plug disposed on the seed layer and doped with second impurities substantially the same as the first impurities, wherein the opening exposes a top surface of the first plug.

    摘要翻译： 公开了层叠半导体器件及其制造方法。 堆叠的半导体器件包括掺杂有第一杂质的种子层，设置在种子层上的多层绝缘图案，其包括在种子层上垂直堆叠的至少两个绝缘层间图案和开口。 所述叠层半导体器件还包括至少一个有源薄层，其中所述至少一个有源薄层中的每一个设置在所述多层绝缘图案的所述至少两个绝缘夹层图案中的一个上，并且其中所述开口暴露所述多层绝缘图案的侧表面 每个至少一个活性薄层。 堆叠的半导体器件还包括第一插头，其设置在种子层上并掺杂有与第一杂质基本相同的第二杂质，其中开口暴露第一插塞的顶表面。

    Epitaxial crystal growth process in the manufacturing of a semiconductor device
    10.
    发明授权
    Epitaxial crystal growth process in the manufacturing of a semiconductor device 有权
    外延晶体生长工艺制造半导体器件

    公开(公告)号：US07364990B2

    公开(公告)日：2008-04-29

    申请号：US11301029

    申请日：2005-12-13

    申请人： Yong-Hoon Son ,  Yu-Gyun Shin ,  Jong-Wook Lee

    发明人： Yong-Hoon Son ,  Yu-Gyun Shin ,  Jong-Wook Lee

    IPC分类号： C30B21/36

    CPC分类号： H01L21/02381 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/02647

    摘要： First and second preliminary epitaxial layers are grown from single-crystalline seeds in openings in an insulation layer until the first and second epitaxial layers are connected to each other. While the first and second preliminary epitaxial layers are being grown, a connection structure of a material having an amorphous state is formed on a portion of the insulation layer located between the first and second preliminary epitaxial layers. The material having an amorphous state is then changed into material having a single-crystalline state. Thus, portions of the first and second epitaxial layers are connected to each other through the connection structure so that the epitaxial layers and the connection structure constitute a single-crystalline structure layer that is free of voids for use as a channel layer or the like of a semiconductor device.

    摘要翻译： 第一和第二初步外延层从绝缘层的开口中的单晶种子生长直到第一和第二外延层彼此连接。 当正在生长第一和第二初步外延层时，在位于第一和第二初步外延层之间的绝缘层的一部分上形成具有非晶状态的材料的连接结构。 然后将具有非晶态的材料变成具有单晶态的材料。 因此，第一外延层和第二外延层的部分通过连接结构彼此连接，使得外延层和连接结构构成无空隙的单晶结构层，用作沟道层等 半导体器件。