公开(公告)号：US08009953B2

公开(公告)日：2011-08-30

申请号：US11885546

申请日：2006-03-03

申请人： Susumu Noda ,  Makoto Okano ,  Masahiro Imada ,  Shigeki Takahashi

发明人： Susumu Noda ,  Makoto Okano ,  Masahiro Imada ,  Shigeki Takahashi

IPC分类号： G02B6/10

CPC分类号： H01S5/10 ,  B82Y20/00 ,  G02B6/1225 ,  G02B6/136 ,  H01S5/105 ,  Y10T428/24331

摘要： An object of the present invention is to provide a three-dimensional photonic crystal which allows an internal formation of a defect structure with an arbitrary shape and size. Multiple holes extending to two different directions are formed obliquely to a base body surface in order to form a first crystal and a second crystal. Base body left between the holes are made to be rods. Moreover, a connection crystal layer is formed by a part of rods having a size different from that of the rods in the first crystal and the second crystal. The connection crystal layer is held between the first crystal and the second crystal and they are fused. In a three-dimensional photonic crystal thus obtained, the rod becomes a point defect. The shape and size of the point defect can be arbitrarily set in any directions within the connection crystal layer. The shape and size of the point defect can also be controlled by adjusting the thickness of the connection crystal layer.

摘要翻译： 本发明的目的是提供一种能够内部形成任意形状和尺寸的缺陷结构的三维光子晶体。 延伸到两个不同方向的多个孔相对于基体表面倾斜地形成，以便形成第一晶体和第二晶体。 留在孔之间的基体被制成棒。 此外，连接晶体层由具有与第一晶体和第二晶体中的棒的尺寸不同的尺寸的棒的一部分形成。 连接晶体层保持在第一晶体和第二晶体之间并且熔合。 在由此获得的三维光子晶体中，棒变成点缺陷。 点缺陷的形状和尺寸可以在连接晶体层内的任何方向任意设置。 也可以通过调整连接晶体层的厚度来控制点缺陷的形状和尺寸。

公开(公告)号：US20080131660A1

公开(公告)日：2008-06-05

申请号：US11885546

申请日：2006-03-03

申请人： Susumu Noda ,  Makoto Okano ,  Masahiro Imada ,  Shigeki Takahashi

发明人： Susumu Noda ,  Makoto Okano ,  Masahiro Imada ,  Shigeki Takahashi

IPC分类号： B32B3/10 ,  B29D11/00

CPC分类号： H01S5/10 ,  B82Y20/00 ,  G02B6/1225 ,  G02B6/136 ,  H01S5/105 ,  Y10T428/24331

摘要： An object of the present invention is to provide a three-dimensional photonic crystal which allows an internal formation of a defect structure with an arbitrary shape and size. Multiple holes extending to two different directions are formed obliquely to a base body surface in order to form a first crystal and a second crystal. Base body left between the holes are made to be rods. Moreover, a connection crystal layers is formed by a part of rods having a size different from that of the rods in the first crystal and the second crystal. The connection crystal layer is held between the first crystal and the second crystal and they are fused. In a three-dimensional photonic crystal thus obtained, the rod becomes a point defect. The shape and size of the point defect can be arbitrarily set in any directions within the connection crystal layer. The shape and size of the point defect can also be controlled by adjusting the thickness of the connection crystal layer.

摘要翻译： 本发明的目的是提供一种能够内部形成任意形状和尺寸的缺陷结构的三维光子晶体。 延伸到两个不同方向的多个孔相对于基体表面倾斜地形成，以便形成第一晶体和第二晶体。 留在孔之间的基体被制成棒。 此外，连接晶体层由具有与第一晶体和第二晶体中的棒的尺寸不同的尺寸的棒的一部分形成。 连接晶体层保持在第一晶体和第二晶体之间并且熔合。 在由此获得的三维光子晶体中，棒变成点缺陷。 点缺陷的形状和尺寸可以在连接晶体层内的任何方向任意设置。 也可以通过调整连接晶体层的厚度来控制点缺陷的形状和尺寸。

公开(公告)号：US08986558B2

公开(公告)日：2015-03-24

申请号：US13061252

申请日：2009-08-27

申请人： Susumu Noda ,  Shigeki Takahashi

发明人： Susumu Noda ,  Shigeki Takahashi

IPC分类号： H01L21/3065 ,  G02B1/00 ,  B82Y20/00

CPC分类号： G02B1/005 ,  B82Y20/00 ,  H01J2237/3327 ,  H01L21/3065

摘要： A plasma etching method capable of oblique etching with a high aspect ratio and high uniformity is provided. In the plasma etching method, a base body is etched with a high aspect ratio by the following process: An electric-field control device having an ion-introducing orifice penetrating therethrough in a direction inclined from the normal to the surface of a base body is placed on or above the surface of this base body. Plasma is generated on the surface of the base body on or above which the electric-field control is placed. A potential difference is formed between the plasma and the base body so as to attract ions in the plasma toward the base body.

摘要翻译： 提供了能够以高纵横比和高均匀性进行倾斜蚀刻的等离子体蚀刻方法。 在等离子体蚀刻方法中，通过以下处理以高纵横比来蚀刻基体：具有从基体的法线垂直的方向贯通的离子引入孔的电场控制装置是 放置在该基体的表面上或上方。 在其上放置电场控制的基体的表面上产生等离子体。 在等离子体和基体之间形成电位差，以将等离子体中的离子吸引到基体。

公开(公告)号：US20110151673A1

公开(公告)日：2011-06-23

申请号：US13061252

申请日：2009-08-27

申请人： Susumu Noda ,  Shigeki Takahashi

发明人： Susumu Noda ,  Shigeki Takahashi

IPC分类号： H01L21/3065 ,  C23F1/08 ,  H01L21/00 ,  G02B1/12

CPC分类号： G02B1/005 ,  B82Y20/00 ,  H01J2237/3327 ,  H01L21/3065

摘要： A plasma etching method capable of oblique etching with a high aspect ratio and high uniformity is provided. In the plasma etching method, a base body is etched with a high aspect ratio by the following process: An electric-field control device having an ion-introducing orifice penetrating therethrough in a direction inclined from the normal to the surface of a base body is placed on or above the surface of this base body. Plasma is generated on the surface of the base body on or above which the electric-field control is placed. A potential difference is formed between the plasma and the base body so as to attract ions in the plasma toward the base body.

摘要翻译： 提供了能够以高纵横比和高均匀性进行倾斜蚀刻的等离子体蚀刻方法。 在等离子体蚀刻方法中，通过以下处理以高纵横比来蚀刻基体：具有从基体的法线垂直的方向贯通的离子引入孔的电场控制装置是 放置在该基体的表面上或上方。 在其上放置电场控制的基体的表面上产生等离子体。 在等离子体和基体之间形成电位差，以将等离子体中的离子吸引到基体。

公开(公告)号：US09274280B2

公开(公告)日：2016-03-01

申请号：US14119746

申请日：2012-05-10

申请人： Jun Ushida ,  Shigeru Nakamura ,  Shigeki Takahashi

发明人： Jun Ushida ,  Shigeru Nakamura ,  Shigeki Takahashi

IPC分类号： G02B6/10 ,  G02B6/24 ,  G02B6/12

CPC分类号： G02B6/243 ,  G02B6/12 ,  G02B2006/12126

摘要： An optical waveguide type optical terminator forms an optical waveguide structure including at least an optical absorption core (103) which is formed on a clad layer (102) and includes a portion composed of silicon in which an impurity of 1019 cm−3 or more is doped, and is used by being optically connected in series with an optical waveguide including a core (105) composed of silicon. The optical absorption core (103) is sufficient provided that, at least, an impurity of around 1019 cm−3 is doped therein. For example, its impurity concentration is sufficient provided that it falls within a range of 1019-1020 cm−3. The existence of this impurity causes absorption of light in the optical absorption core (103).

摘要翻译： 光波导型光学终端器形成至少包括形成在包层（102）上的光吸收芯（103）的光波导结构，其包括由1019cm-3以上的杂质为硅的硅构成的部分 并且通过与包括由硅构成的芯（105）的光波导光学连接而被使用。 光吸收芯（103）足够，只要至少掺杂约1019cm-3的杂质即可。 例如，其杂质浓度足以在1019-1020cm-3的范围内。 这种杂质的存在导致光吸收芯（103）中的光的吸收。

公开(公告)号：US09201196B2

公开(公告)日：2015-12-01

申请号：US14360107

申请日：2012-11-29

申请人： Shigeki Takahashi

发明人： Shigeki Takahashi

IPC分类号： G02B6/10 ,  G02B6/122 ,  G02B6/14 ,  G02B6/26 ,  G02B6/12

CPC分类号： G02B6/122 ,  G02B6/14 ,  G02B6/268 ,  G02B2006/12097 ,  G02B2006/12109

摘要： A high-order mode filter includes a slab region, a band-shaped projection elongated in an optical waveguide direction, a first optical waveguide including a disturbance element and a second optical waveguide. The disturbance element is formed by doping impurities into the slab region, thus indicating a lower refractive index than the slab region. Both the first optical waveguide and the second optical waveguide are alternately arranged. The first optical waveguide may include a disturbance element positioned close to the projection, while the second optical waveguide may include a disturbance element distanced from the projection in the slab region. The high-order mode filter causes a large high-order mode loss due to interference between a removable high-order mode and an intentional high-order mode at the connecting face between the first optical waveguide and the second optical waveguide, thus reducing reflected light and stray light.

摘要翻译： 高阶模式滤波器包括平板区域，在光波导方向上延伸的带状突起，包括扰动元件的第一光波导和第二光波导。 扰乱元件是通过将杂质掺杂到板坯区域中形成的，因此表示比板坯区域更低的折射率。 第一光波导和第二光波导都交替布置。 第一光波导可以包括靠近突起定位的扰动元件，而第二光波导可以包括远离板坯区域中的突起的扰动元件。 高阶模式滤波器由于第一光波导和第二光波导之间的连接面处的可移除高阶模式和有意高阶模式之间的干涉而导致大的高阶模损耗，从而减少了反射光 和杂散光。

公开(公告)号：US08488375B2

公开(公告)日：2013-07-16

申请号：US13037592

申请日：2011-03-01

申请人： Daisuke Saida ,  Minoru Amano ,  Junichi Ito ,  Yuichi Ohsawa ,  Saori Kashiwada ,  Chikayoshi Kamata ,  Shigeki Takahashi

发明人： Daisuke Saida ,  Minoru Amano ,  Junichi Ito ,  Yuichi Ohsawa ,  Saori Kashiwada ,  Chikayoshi Kamata ,  Shigeki Takahashi

IPC分类号： G11C11/14

CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C11/1659 ,  H01L27/228

摘要： According to one embodiment, a magnetic recording element includes a stacked body including a first stacked unit and a second stacked unit. The first stacked unit includes a first ferromagnetic layer, a second ferromagnetic layer and a first nonmagnetic layer. Magnetization of the first ferromagnetic layer is substantially fixed in a first direction being perpendicular to a first ferromagnetic layer surface. The second stacked unit includes a third ferromagnetic layer, a fourth ferromagnetic layer and a second nonmagnetic layer. Magnetization of the fourth ferromagnetic layer is substantially fixed in a second direction being perpendicular to a fourth ferromagnetic layer surface. The first direction is opposite to the second direction.

摘要翻译： 根据一个实施例，磁记录元件包括包括第一堆叠单元和第二堆叠单元的堆叠体。 第一堆叠单元包括第一铁磁层，第二铁磁层和第一非磁性层。 第一铁磁层的磁化在垂直于第一铁磁层表面的第一方向上基本固定。 第二堆叠单元包括第三铁磁层，第四铁磁层和第二非磁性层。 第四铁磁层的磁化在垂直于第四铁磁层表面的第二方向上基本固定。 第一方向与第二方向相反。

公开(公告)号：US20120244639A1

公开(公告)日：2012-09-27

申请号：US13226868

申请日：2011-09-07

申请人： Yuichi OHSAWA ,  Shigeki Takahashi ,  Junichi Ito ,  Daisuke Saida ,  Kyoichi Suguro ,  Hiroaki Yoda

发明人： Yuichi OHSAWA ,  Shigeki Takahashi ,  Junichi Ito ,  Daisuke Saida ,  Kyoichi Suguro ,  Hiroaki Yoda

IPC分类号： H01L43/12

CPC分类号： H01L43/12 ,  H01L29/82

摘要： According to one embodiment, a method of manufacturing a magnetic memory, the method includes forming a first magnetic layer having a variable magnetization, forming a tunnel barrier layer on the first magnetic layer, forming a second magnetic layer on the tunnel barrier layer, the second magnetic layer having an invariable magnetization, forming a hard mask layer as a mask on the second magnetic layer, patterning the second magnetic layer by using the mask of the hard mask layer, and executing a GCIB-irradiation by using the mask of the hard mask layer, after the patterning.

摘要翻译： 根据一个实施例，一种制造磁存储器的方法，该方法包括形成具有可变磁化强度的第一磁性层，在第一磁性层上形成隧道势垒层，在隧道势垒层上形成第二磁性层， 具有不变磁化的磁性层，在第二磁性层上形成硬掩模层作为掩模，通过使用硬掩模层的掩模对第二磁性层进行构图，并使用硬掩模的掩模执行GCIB照射 层，图案后。

公开(公告)号：US20120182051A1

公开(公告)日：2012-07-19

申请号：US13433624

申请日：2012-03-29

申请人： Takaaki Aoki ,  Shoji Mizuno ,  Shigeki Takahashi ,  Takashi Nakano ,  Nozomu Akagi ,  Yoshiyuki Hattori ,  Makoto Kuwahara ,  Kyoko Okada

发明人： Takaaki Aoki ,  Shoji Mizuno ,  Shigeki Takahashi ,  Takashi Nakano ,  Nozomu Akagi ,  Yoshiyuki Hattori ,  Makoto Kuwahara ,  Kyoko Okada

IPC分类号： H03K3/00

CPC分类号： H01L27/0629 ,  H01L27/0255 ,  H03K17/063 ,  H03K17/165 ,  H03K17/168 ,  H03K17/567 ,  H03K17/687 ,  H03K2217/0036

摘要： A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a conduction state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.

摘要翻译： 开关电路包括：具有第一电极，第二电极和控制电极的晶体管; 齐纳二极管; 和电容器。 通过切换晶体管的控制电压，第一电极和第二电极之间的连接能够在导通状态和非导通状态之间暂时切换。 齐纳二极管和电容器串联耦合在晶体管的第一电极和控制电极之间。 第一电极是漏极或集电极。

公开(公告)号：US20120139079A1

公开(公告)日：2012-06-07

申请号：US13296832

申请日：2011-11-15

申请人： Norihito TOKURA ,  Satoshi Shiraki ,  Shigeki Takahashi ,  Shinya Sakurai ,  Takashi Suzuki

发明人： Norihito TOKURA ,  Satoshi Shiraki ,  Shigeki Takahashi ,  Shinya Sakurai ,  Takashi Suzuki

IPC分类号： H01L29/47

CPC分类号： H01L21/76283 ,  H01L27/0814 ,  H01L27/1203 ,  H01L29/0619 ,  H01L29/0649 ,  H01L29/08 ,  H01L29/405 ,  H01L29/8611

摘要： A diode has a semiconductor layer and cathode and anode electrodes on a surface of the semiconductor layer. The semiconductor layer has cathode and anode regions respectively contacting the cathode and anode electrodes. The anode region has a first diffusion region having high surface concentration, a second diffusion region having intermediate surface concentration, and a third diffusion region having low surface concentration. The first diffusion region is covered with the second and third diffusion regions. The second diffusion region has a first side surface facing the cathode region, a second side surface opposite to the cathode region, and a bottom surface extending between the first and second side surfaces. The third diffusion region covers at least one of the first corner part connecting the first side surface with the bottom surface and the second corner part connecting the second side surface with the bottom surface.

摘要翻译： 二极管在半导体层的表面上具有半导体层和阴极和阳极电极。 半导体层具有分别与阴极和阳极电极接触的阴极和阳极区域。 阳极区域具有表面浓度高的第一扩散区域，具有中间表面浓度的第二扩散区域和具有低表面浓度的第三扩散区域。 第一扩散区被第二和第三扩散区覆盖。 第二扩散区域具有面对阴极区域的第一侧表面，与阴极区域相对的第二侧表面和在第一和第二侧表面之间延伸的底表面。 第三扩散区域覆盖连接第一侧表面与底表面的第一角部和将第二侧表面与底表面连接的第二角部中的至少一个。