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公开(公告)号:US09274280B2
公开(公告)日:2016-03-01
申请号:US14119746
申请日:2012-05-10
申请人: Jun Ushida , Shigeru Nakamura , Shigeki Takahashi
发明人: Jun Ushida , Shigeru Nakamura , Shigeki Takahashi
CPC分类号: G02B6/243 , G02B6/12 , G02B2006/12126
摘要: An optical waveguide type optical terminator forms an optical waveguide structure including at least an optical absorption core (103) which is formed on a clad layer (102) and includes a portion composed of silicon in which an impurity of 1019 cm−3 or more is doped, and is used by being optically connected in series with an optical waveguide including a core (105) composed of silicon. The optical absorption core (103) is sufficient provided that, at least, an impurity of around 1019 cm−3 is doped therein. For example, its impurity concentration is sufficient provided that it falls within a range of 1019-1020 cm−3. The existence of this impurity causes absorption of light in the optical absorption core (103).
摘要翻译: 光波导型光学终端器形成至少包括形成在包层(102)上的光吸收芯(103)的光波导结构,其包括由1019cm-3以上的杂质为硅的硅构成的部分 并且通过与包括由硅构成的芯(105)的光波导光学连接而被使用。 光吸收芯(103)足够,只要至少掺杂约1019cm-3的杂质即可。 例如,其杂质浓度足以在1019-1020cm-3的范围内。 这种杂质的存在导致光吸收芯(103)中的光的吸收。
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公开(公告)号:US20140105544A1
公开(公告)日:2014-04-17
申请号:US14119746
申请日:2012-05-10
申请人: Jun Ushida , Shigeru Nakamura , Shigeki Takahashi
发明人: Jun Ushida , Shigeru Nakamura , Shigeki Takahashi
IPC分类号: G02B6/24
CPC分类号: G02B6/243 , G02B6/12 , G02B2006/12126
摘要: An optical waveguide type optical terminator forms an optical waveguide structure including at least an optical absorption core (103) which is formed on a clad layer (102) and includes a portion composed of silicon in which an impurity of 1019 cm−3 or more is doped, and is used by being optically connected in series with an optical waveguide including a core (105) composed of silicon. The optical absorption core (103) is sufficient provided that, at least, an impurity of around 1019 cm−3 is doped therein. For example, its impurity concentration is sufficient provided that it falls within a range of 1019 -1020 cm−3. The existence of this impurity causes absorption of light in the optical absorption core (103).
摘要翻译: 光波导型光学终端器形成至少包括形成在包层(102)上的光吸收芯(103)的光波导结构,其包括由1019cm-3以上的杂质为硅的硅构成的部分 并且通过与包括由硅构成的芯(105)的光波导光学连接而被使用。 光吸收芯(103)足够,只要至少掺杂约1019cm-3的杂质即可。 例如,其杂质浓度足以满足1019-1020cm-3的范围。 这种杂质的存在导致光吸收芯(103)中的光的吸收。
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公开(公告)号:US09151892B2
公开(公告)日:2015-10-06
申请号:US14000084
申请日:2012-02-01
CPC分类号: G02B6/1228 , G02B6/262 , G02B6/305
摘要: In order to provide a spot size converter and a method for making the same which enable the optical connection with low loss and are able to reduce the excess loss for the position misalignment in mounting, a spot size converter according to an exemplary aspect of the present invention includes: a substrate on which an optical waveguide including a first core is laminated and which includes a notch; a core reducing part which is formed so that a cross-section area of the first core may gradually decrease toward an end part of the first core in the direction of light propagation; a second core which surrounds the core reducing part and is made of a material whose refractive index is smaller than that of the first core; a peripheral clad which surrounds the second core and is made of a material whose refractive index is smaller than that of the second core; and a lower clad which is formed in a lower part of the second core and includes the peripheral clad; wherein the lower clad is formed in the notch.
摘要翻译: 为了提供一种光斑尺寸转换器及其制造方法,能够实现低损耗的光连接并且能够减少安装时位置偏差的过多损耗,根据本发明的示例性方面的光斑尺寸转换器 本发明包括:基板,其上层叠包括第一芯的光波导,并且包括凹口; 芯部还原部,其形成为使得第一芯的截面积在光传播方向上朝向第一芯的端部逐渐减小; 围绕所述纤芯缩径部的第二纤芯,由折射率小于所述第一纤芯的材料制成; 围绕第二芯的外围包层,由折射率小于第二芯的材料制成; 以及形成在所述第二芯体的下部并且包括所述周边包层的下部包层; 其中所述下包层形成在所述凹口中。
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公开(公告)号:US20130322816A1
公开(公告)日:2013-12-05
申请号:US14000084
申请日:2012-02-01
IPC分类号: G02B6/26
CPC分类号: G02B6/1228 , G02B6/262 , G02B6/305
摘要: In order to provide a spot size converter and a method for making the same which enable the optical connection with low loss and are able to reduce the excess loss for the position misalignment in mounting, a spot size converter according to an exemplary aspect of the present invention includes: a substrate on which an optical waveguide including a first core is laminated and which includes a notch; a core reducing part which is formed so that a cross-section area of the first core may gradually decrease toward an end part of the first core in the direction of light propagation; a second core which surrounds the core reducing part and is made of a material whose refractive index is smaller than that of the first core; a peripheral clad which surrounds the second core and is made of a material whose refractive index is smaller than that of the second core; and a lower clad which is formed in a lower part of the second core and includes the peripheral clad; wherein the lower clad is formed in the notch.
摘要翻译: 为了提供一种光斑尺寸转换器及其制造方法,能够实现低损耗的光连接并且能够减少安装时位置偏差的过多损耗,根据本发明的示例性方面的光斑尺寸转换器 本发明包括:基板,其上层叠包括第一芯的光波导,并且包括凹口; 芯部还原部,其形成为使得第一芯的截面积在光传播方向上朝向第一芯的端部逐渐减小; 围绕所述纤芯缩径部的第二纤芯,由折射率小于所述第一纤芯的材料制成; 围绕第二芯的外围包层,由折射率小于第二芯的材料制成; 以及形成在所述第二芯体的下部并且包括所述周边包层的下部包层; 其中所述下包层形成在所述凹口中。
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公开(公告)号:US09201196B2
公开(公告)日:2015-12-01
申请号:US14360107
申请日:2012-11-29
申请人: Shigeki Takahashi
发明人: Shigeki Takahashi
CPC分类号: G02B6/122 , G02B6/14 , G02B6/268 , G02B2006/12097 , G02B2006/12109
摘要: A high-order mode filter includes a slab region, a band-shaped projection elongated in an optical waveguide direction, a first optical waveguide including a disturbance element and a second optical waveguide. The disturbance element is formed by doping impurities into the slab region, thus indicating a lower refractive index than the slab region. Both the first optical waveguide and the second optical waveguide are alternately arranged. The first optical waveguide may include a disturbance element positioned close to the projection, while the second optical waveguide may include a disturbance element distanced from the projection in the slab region. The high-order mode filter causes a large high-order mode loss due to interference between a removable high-order mode and an intentional high-order mode at the connecting face between the first optical waveguide and the second optical waveguide, thus reducing reflected light and stray light.
摘要翻译: 高阶模式滤波器包括平板区域,在光波导方向上延伸的带状突起,包括扰动元件的第一光波导和第二光波导。 扰乱元件是通过将杂质掺杂到板坯区域中形成的,因此表示比板坯区域更低的折射率。 第一光波导和第二光波导都交替布置。 第一光波导可以包括靠近突起定位的扰动元件,而第二光波导可以包括远离板坯区域中的突起的扰动元件。 高阶模式滤波器由于第一光波导和第二光波导之间的连接面处的可移除高阶模式和有意高阶模式之间的干涉而导致大的高阶模损耗,从而减少了反射光 和杂散光。
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公开(公告)号:US08488375B2
公开(公告)日:2013-07-16
申请号:US13037592
申请日:2011-03-01
申请人: Daisuke Saida , Minoru Amano , Junichi Ito , Yuichi Ohsawa , Saori Kashiwada , Chikayoshi Kamata , Shigeki Takahashi
发明人: Daisuke Saida , Minoru Amano , Junichi Ito , Yuichi Ohsawa , Saori Kashiwada , Chikayoshi Kamata , Shigeki Takahashi
IPC分类号: G11C11/14
CPC分类号: H01L43/08 , G11C11/161 , G11C11/1659 , H01L27/228
摘要: According to one embodiment, a magnetic recording element includes a stacked body including a first stacked unit and a second stacked unit. The first stacked unit includes a first ferromagnetic layer, a second ferromagnetic layer and a first nonmagnetic layer. Magnetization of the first ferromagnetic layer is substantially fixed in a first direction being perpendicular to a first ferromagnetic layer surface. The second stacked unit includes a third ferromagnetic layer, a fourth ferromagnetic layer and a second nonmagnetic layer. Magnetization of the fourth ferromagnetic layer is substantially fixed in a second direction being perpendicular to a fourth ferromagnetic layer surface. The first direction is opposite to the second direction.
摘要翻译: 根据一个实施例,磁记录元件包括包括第一堆叠单元和第二堆叠单元的堆叠体。 第一堆叠单元包括第一铁磁层,第二铁磁层和第一非磁性层。 第一铁磁层的磁化在垂直于第一铁磁层表面的第一方向上基本固定。 第二堆叠单元包括第三铁磁层,第四铁磁层和第二非磁性层。 第四铁磁层的磁化在垂直于第四铁磁层表面的第二方向上基本固定。 第一方向与第二方向相反。
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公开(公告)号:US20120244639A1
公开(公告)日:2012-09-27
申请号:US13226868
申请日:2011-09-07
申请人: Yuichi OHSAWA , Shigeki Takahashi , Junichi Ito , Daisuke Saida , Kyoichi Suguro , Hiroaki Yoda
发明人: Yuichi OHSAWA , Shigeki Takahashi , Junichi Ito , Daisuke Saida , Kyoichi Suguro , Hiroaki Yoda
IPC分类号: H01L43/12
摘要: According to one embodiment, a method of manufacturing a magnetic memory, the method includes forming a first magnetic layer having a variable magnetization, forming a tunnel barrier layer on the first magnetic layer, forming a second magnetic layer on the tunnel barrier layer, the second magnetic layer having an invariable magnetization, forming a hard mask layer as a mask on the second magnetic layer, patterning the second magnetic layer by using the mask of the hard mask layer, and executing a GCIB-irradiation by using the mask of the hard mask layer, after the patterning.
摘要翻译: 根据一个实施例,一种制造磁存储器的方法,该方法包括形成具有可变磁化强度的第一磁性层,在第一磁性层上形成隧道势垒层,在隧道势垒层上形成第二磁性层, 具有不变磁化的磁性层,在第二磁性层上形成硬掩模层作为掩模,通过使用硬掩模层的掩模对第二磁性层进行构图,并使用硬掩模的掩模执行GCIB照射 层,图案后。
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公开(公告)号:US20120182051A1
公开(公告)日:2012-07-19
申请号:US13433624
申请日:2012-03-29
申请人: Takaaki Aoki , Shoji Mizuno , Shigeki Takahashi , Takashi Nakano , Nozomu Akagi , Yoshiyuki Hattori , Makoto Kuwahara , Kyoko Okada
发明人: Takaaki Aoki , Shoji Mizuno , Shigeki Takahashi , Takashi Nakano , Nozomu Akagi , Yoshiyuki Hattori , Makoto Kuwahara , Kyoko Okada
IPC分类号: H03K3/00
CPC分类号: H01L27/0629 , H01L27/0255 , H03K17/063 , H03K17/165 , H03K17/168 , H03K17/567 , H03K17/687 , H03K2217/0036
摘要: A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a conduction state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.
摘要翻译: 开关电路包括:具有第一电极,第二电极和控制电极的晶体管; 齐纳二极管; 和电容器。 通过切换晶体管的控制电压,第一电极和第二电极之间的连接能够在导通状态和非导通状态之间暂时切换。 齐纳二极管和电容器串联耦合在晶体管的第一电极和控制电极之间。 第一电极是漏极或集电极。
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公开(公告)号:US20120139079A1
公开(公告)日:2012-06-07
申请号:US13296832
申请日:2011-11-15
IPC分类号: H01L29/47
CPC分类号: H01L21/76283 , H01L27/0814 , H01L27/1203 , H01L29/0619 , H01L29/0649 , H01L29/08 , H01L29/405 , H01L29/8611
摘要: A diode has a semiconductor layer and cathode and anode electrodes on a surface of the semiconductor layer. The semiconductor layer has cathode and anode regions respectively contacting the cathode and anode electrodes. The anode region has a first diffusion region having high surface concentration, a second diffusion region having intermediate surface concentration, and a third diffusion region having low surface concentration. The first diffusion region is covered with the second and third diffusion regions. The second diffusion region has a first side surface facing the cathode region, a second side surface opposite to the cathode region, and a bottom surface extending between the first and second side surfaces. The third diffusion region covers at least one of the first corner part connecting the first side surface with the bottom surface and the second corner part connecting the second side surface with the bottom surface.
摘要翻译: 二极管在半导体层的表面上具有半导体层和阴极和阳极电极。 半导体层具有分别与阴极和阳极电极接触的阴极和阳极区域。 阳极区域具有表面浓度高的第一扩散区域,具有中间表面浓度的第二扩散区域和具有低表面浓度的第三扩散区域。 第一扩散区被第二和第三扩散区覆盖。 第二扩散区域具有面对阴极区域的第一侧表面,与阴极区域相对的第二侧表面和在第一和第二侧表面之间延伸的底表面。 第三扩散区域覆盖连接第一侧表面与底表面的第一角部和将第二侧表面与底表面连接的第二角部中的至少一个。
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公开(公告)号:US20110210766A1
公开(公告)日:2011-09-01
申请号:US13105021
申请日:2011-05-11
申请人: Takaaki AOKI , Shoji Mizuno , Shigeki Takahashi , Takashi Nakano , Nozomu Akagi , Yoshiyuki Hattori , Makoto Kuwahara , Kyoko Okada
发明人: Takaaki AOKI , Shoji Mizuno , Shigeki Takahashi , Takashi Nakano , Nozomu Akagi , Yoshiyuki Hattori , Makoto Kuwahara , Kyoko Okada
IPC分类号: H03B1/00
CPC分类号: H01L27/0629 , H01L27/0255 , H03K17/063 , H03K17/165 , H03K17/168 , H03K17/567 , H03K17/687 , H03K2217/0036
摘要: A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a conduction state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.
摘要翻译: 开关电路包括:具有第一电极,第二电极和控制电极的晶体管; 齐纳二极管; 和电容器。 通过切换晶体管的控制电压,第一电极和第二电极之间的连接能够在导通状态和非导通状态之间暂时切换。 齐纳二极管和电容器串联耦合在晶体管的第一电极和控制电极之间。 第一电极是漏极或集电极。
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