公开(公告)号：US3014186A

公开(公告)日：1961-12-19

申请号：US55835556

申请日：1956-01-10

Applicant: TEXAS INSTRUMENTS INC

Inventor： WEBSTER ROGER R

IPC: H03F1/44 ,  H03G3/30

CPC classification number: H03G3/30 ,  H03G3/3057

公开(公告)号：US3050638A

公开(公告)日：1962-08-21

申请号：US55054155

申请日：1955-12-02

Applicant: TEXAS INSTRUMENTS INC

Inventor： EVANS ARTHUR D ,  WEBSTER ROGER R

IPC: H01L21/00 ,  H01L27/02 ,  H01L27/07 ,  H03D1/18 ,  H03F1/30

CPC classification number: H03F1/302 ,  H01L21/00 ,  H01L27/0211 ,  H01L27/0761 ,  H03D1/18

公开(公告)号：US3022421A

公开(公告)日：1962-02-20

申请号：US65012657

申请日：1957-04-02

Applicant: TEXAS INSTRUMENTS INC

Inventor： NYGAARD JAMES L ,  WEBSTER ROGER R

IPC: H03G3/30

CPC classification number: H03G3/3052

公开(公告)号：US2925501A

公开(公告)日：1960-02-16

申请号：US56030056

申请日：1956-01-20

Applicant: TEXAS INSTRUMENTS INC

Inventor： DE WEESE CHARLES R ,  LACY JAMES W ,  WEBSTER ROGER R

IPC: G05B1/02 ,  H01L27/06

CPC classification number: H01L27/0688 ,  G05B1/025

公开(公告)号：US3325704A

公开(公告)日：1967-06-13

申请号：US38671964

申请日：1964-07-31

Applicant: TEXAS INSTRUMENTS INC

Inventor： MELVIN BELASCO ,  SAUL NOREN ,  WEBSTER ROGER R

IPC: H03B5/18

CPC classification number: H03B5/1805

公开(公告)号：US3234461A

公开(公告)日：1966-02-08

申请号：US7365860

申请日：1960-12-05

Applicant: TEXAS INSTRUMENTS INC

Inventor： TRENT ROBERT L ,  WEBSTER ROGER R

IPC: G01N27/02

CPC classification number: G01N27/023

公开(公告)号：US2981835A

公开(公告)日：1961-04-25

申请号：US54195355

申请日：1955-10-21

Applicant: TEXAS INSTRUMENTS INC

Inventor： WEBSTER ROGER R ,  NYGAARD JAMES L

IPC: H02K21/14 ,  H03G3/30

CPC classification number: H03G3/3057 ,  H02K2201/12 ,  H03G3/30

公开(公告)号：US3636420A

公开(公告)日：1972-01-18

申请号：US3636420D

申请日：1970-02-02

Applicant: TEXAS INSTRUMENTS INC

Inventor： VENDELIN GEORGE D ,  WEBSTER ROGER R

IPC: H01L29/00 ,  H01L29/93 ,  H01L3/00

CPC classification number: H01L29/93 ,  H01L29/00 ,  Y10S148/031 ,  Y10S148/05

Abstract: A planar varactor diode for integrated circuit applications, especially at high frequencies, is disclosed. This diode has lowleakage currents, improved reversed bias characteristics, and reduced junction and MOS capacitance. The low-leakage currents are obtained by minimizing the surface perimeter of the device; the low-junction capacitance is obtained by reducing the junction area of the two active regions; and the reduced MOS capacitance is achieved by offsetting the anodic region underneath the anode contact.

公开(公告)号：US3559005A

公开(公告)日：1971-01-26

申请号：US3559005D

申请日：1969-03-07

Applicant: TEXAS INSTRUMENTS INC

Inventor： VENDELIN GEORGE D ,  WEBSTER ROGER R

IPC: H01L27/00 ,  H01L29/86 ,  H01L5/00

CPC classification number: H01L27/00 ,  H01L29/86 ,  Y10S148/037 ,  Y10S148/05

Abstract: DISCLOSED IN A PLANAR VARACTOR DIODE AND A METHOD OF PRODUCING THE SAME FOR INTEGRATED APPLICATIONS, ESPECIALLY AT HIGH FRQUENCIES. THIS DIODE HAS LOW LEAKAGE CURRENTS, IMPROVE REVERSE BIAS CHARACTERISTICS, AND REDUCED JUNCTION AND MOS CAPACITANCE. THE LOW LEAKAGE CURRENTS ARE OBTAINED BY MINIMIZING THE SURFACE PERIMETER OF THE DEVICE, THE LOW JUNCTION CAPACITANCE IS ATTAINED BY REDUCING THE JUNCTION AREA OF THE TWO ACTIVE REGIONS AND THE REDUCED MOS CAPACITANCE IS ACHIEVED BY FORMING A CAVITY BENEATH THE CONTACT OF THE ANODE REGION OR BY OFFSETTING THE ANODE REGION UNDERNEATH THE ANODE CONTACT.

公开(公告)号：US3035170A

公开(公告)日：1962-05-15

申请号：US58509856

申请日：1956-05-15

Applicant: TEXAS INSTRUMENTS INC

Inventor： WEBSTER ROGER R

IPC: H03G3/30

CPC classification number: H03G3/30