公开(公告)号：US20250006593A1

公开(公告)日：2025-01-02

申请号：US18345939

申请日：2023-06-30

Applicant: Texas Instruments Incorporated

Inventor： Dong Seup Lee ,  Jungwoo Joh ,  Hiroshi Yamasaki ,  Hisayuki Shimada ,  Kenichi Yoshikawa

IPC: H01L23/48 ,  H01L21/311 ,  H01L21/768 ,  H01L23/00 ,  H01L25/065 ,  H01L29/20

Abstract: A microelectronic device includes a semiconductor substrate with a III-N semiconductor layer over the semiconductor substrate. A substrate via opening extending through the III-N semiconductor layer and a substrate contact pad in the substrate via opening, contacting the semiconductor substrate provide a substrate contact. The microelectronic device also includes an inter-level dielectric layer with a planar surface over the substrate contact. The microelectronic device further includes an interconnect metal level over the inter-level dielectric layer. The substrate via opening is formed through the III-N semiconductor layer to expose the semiconductor substrate. The substrate contact pad is formed over the III-N semiconductor layer, extending into the substrate via opening and making contact with the semiconductor substrate, to form the substrate contact. The ILD layer is formed over the III-N semiconductor layer and the substrate contact pad, so that the ILD layer has a planar surface over the substrate via opening.

公开(公告)号：US20190288090A1

公开(公告)日：2019-09-19

申请号：US16420713

申请日：2019-05-23

Applicant: Texas Instruments Incorporated

Inventor： Yoshikazu Kondo ,  Shoji Wada ,  Hiroshi Yamasaki ,  Masahiro Iwamoto

IPC: H01L29/66 ,  H01L29/417 ,  H01L29/45 ,  H01L21/283 ,  H01L29/20 ,  H01L21/306 ,  H01L21/285

Abstract: Metal contact openings are etched in the barrier layer of a group III-N HEMT with a first gas combination that etches down into the barrier layer, and a second gas combination that etches further down into the barrier layer to a depth that lies above the top surface of a channel layer that touches and lies below the barrier layer.

公开(公告)号：US20180033865A1

公开(公告)日：2018-02-01

申请号：US15730853

申请日：2017-10-12

Applicant: Texas Instruments Incorporated

Inventor： Yoshikazu Kondo ,  Shoji Wada ,  Hiroshi Yamasaki ,  Masahiro Iwamoto

IPC: H01L29/66 ,  H01L29/417 ,  H01L29/20 ,  H01L21/306 ,  H01L21/285 ,  H01L29/45 ,  H01L21/283

CPC classification number: H01L29/66462 ,  H01L21/283 ,  H01L21/28575 ,  H01L21/30621 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/452

Abstract: Metal contact openings are etched in the barrier layer of a group III-N HEMT with a first gas combination that etches down into the barrier layer, and a second gas combination that etches further down into the barrier layer to a depth that lies above the top surface of a channel layer that touches and lies below the barrier layer.

公开(公告)号：US09443737B2

公开(公告)日：2016-09-13

申请号：US13856016

申请日：2013-04-03

Applicant: Texas Instruments Incorporated

Inventor： Yoshikazu Kondo ,  Shoji Wada ,  Hiroshi Yamasaki ,  Masahiro Iwamoto

IPC: H01L21/3205 ,  H01L21/28 ,  H01L29/778 ,  H01L21/283 ,  H01L21/306 ,  H01L29/66 ,  H01L21/285 ,  H01L29/45 ,  H01L29/20

CPC classification number: H01L29/66462 ,  H01L21/283 ,  H01L21/28575 ,  H01L21/30621 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/452

Abstract: Metal contact openings are etched in the barrier layer of a group III-N HEMT with a first gas combination that etches down into the barrier layer, and a second gas combination that etches further down into the barrier layer to a depth that lies above the top surface of a channel layer that touches and lies below the barrier layer.

Abstract translation: 金属接触开口在III-N HEMT的阻挡层中被蚀刻，其具有蚀刻到阻挡层中的第一气体组合，以及第二气体组合，其进一步向下蚀刻到阻挡层中至达顶部的深度 接触并位于阻挡层下方的通道层的表面。

公开(公告)号：US20140302673A1

公开(公告)日：2014-10-09

申请号：US13856043

申请日：2013-04-03

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Yoshikazu Kondo ,  Shoji Wada ,  Hiroshi Yamasaki ,  Masahiro Iwamoto

IPC: H01L21/283 ,  H01L21/306

CPC classification number: H01L21/30621 ,  H01L21/28575 ,  H01L29/2003 ,  H01L29/452 ,  H01L29/66462

Abstract: Metal contacts with low contact resistances are formed in a group III-N HEMT by forming metal contact openings in the barrier layer of the group III-N HEMT to have depths that correspond to low contact resistances. The metal contact openings are etched in the barrier layer with a first gas combination that etches down into the barrier layer, and a second gas combination that etches further down into the barrier layer.

Abstract translation: 通过在III-N型HEMT的势垒层中形成金属接触开口以形成对应于低接触电阻的深度，在III-N型HEMT中形成具有低接触电阻的金属接触。 金属接触开口在阻挡层中被蚀刻，其中第一气体组合蚀刻到阻挡层中，以及第二气体组合，其进一步向下蚀刻到阻挡层中。

公开(公告)号：US10263085B2

公开(公告)日：2019-04-16

申请号：US15415995

申请日：2017-01-26

Applicant: Texas Instruments Incorporated

Inventor： Hiroyuki Tomomatsu ,  Sameer Pendharkar ,  Hiroshi Yamasaki

IPC: H01L29/40 ,  H01L29/778 ,  H01L29/423 ,  H01L29/20

Abstract: A transistor device includes a field plate that extends from a source runner layer and/or a source contact layer. The field plate can be coplanar with and/or below a gate runner layer. The gate runner layer is routed away from a region directly above the gate metal layer by a gate bridge, such that the field plate can extend directly above the gate metal layer without being interfered by the gate runner layer. Coplanar with the source runner layer or the source contact layer, the field plate is positioned close to the channel region, which helps reduce its parasitic capacitance. By vertically overlapping the metal gate layer and the field plate, the disclosed HEMT device may achieve significant size efficiency without additional routings.

公开(公告)号：US20160351685A1

公开(公告)日：2016-12-01

申请号：US15237041

申请日：2016-08-15

Applicant: Texas Instruments Incorporated

Inventor： Yoshikazu Kondo ,  Shoji Wada ,  Hiroshi Yamasaki ,  Masahiro Iwamoto

IPC: H01L29/66 ,  H01L29/20 ,  H01L29/45 ,  H01L21/306 ,  H01L29/417

CPC classification number: H01L29/66462 ,  H01L21/283 ,  H01L21/28575 ,  H01L21/30621 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/452

Abstract: Metal contact openings are etched in the barrier layer of a group III-N HEMT with a first gas combination that etches down into the barrier layer, and a second gas combination that etches further down into the barrier layer to a depth that lies above the top surface of a channel layer that touches and lies below the barrier layer.

Abstract translation: 金属接触开口在III-N HEMT的阻挡层中被蚀刻，其具有蚀刻到阻挡层中的第一气体组合，以及第二气体组合，其进一步向下蚀刻到阻挡层中至达顶部的深度 接触并位于阻挡层下方的通道层的表面。

公开(公告)号：US10903320B2

公开(公告)日：2021-01-26

申请号：US16383857

申请日：2019-04-15

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Hiroyuki Tomomatsu ,  Sameer Pendharkar ,  Hiroshi Yamasaki

IPC: H01L29/40 ,  H01L29/778 ,  H01L23/48 ,  H01L29/423 ,  H01L23/482 ,  H01L29/20

Abstract: A transistor device includes a field plate that extends from a source runner layer and/or a source contact layer. The field plate can be coplanar with and/or below a gate runner layer. The gate runner layer is routed away from a region directly above the gate metal layer by a gate bridge, such that the field plate can extend directly above the gate metal layer without being interfered by the gate runner layer. Coplanar with the source runner layer or the source contact layer, the field plate is positioned close to the channel region, which helps reduce its parasitic capacitance. By vertically overlapping the metal gate layer and the field plate, the disclosed HEMT device may achieve significant size efficiency without additional routings.

公开(公告)号：US10707323B2

公开(公告)日：2020-07-07

申请号：US16420713

申请日：2019-05-23

Applicant: Texas Instruments Incorporated

Inventor： Yoshikazu Kondo ,  Shoji Wada ,  Hiroshi Yamasaki ,  Masahiro Iwamoto

IPC: H01L21/283 ,  H01L21/285 ,  H01L21/306 ,  H01L29/417 ,  H01L29/778 ,  H01L29/201 ,  H01L29/66 ,  H01L29/45 ,  H01L29/20

Abstract: Metal contact openings are etched in the barrier layer of a group III-N HEMT with a first gas combination that etches down into the barrier layer, and a second gas combination that etches further down into the barrier layer to a depth that lies above the top surface of a channel layer that touches and lies below the barrier layer.

公开(公告)号：US10374057B2

公开(公告)日：2019-08-06

申请号：US15730853

申请日：2017-10-12

Applicant: Texas Instruments Incorporated

Inventor： Yoshikazu Kondo ,  Shoji Wada ,  Hiroshi Yamasaki ,  Masahiro Iwamoto

IPC: H01L21/306 ,  H01L29/201 ,  H01L29/417 ,  H01L29/45 ,  H01L29/778 ,  H01L29/66 ,  H01L21/283 ,  H01L29/20 ,  H01L21/285

Abstract: Metal contact openings are etched in the barrier layer of a group III-N HEMT with a first gas combination that etches down into the barrier layer, and a second gas combination that etches further down into the barrier layer to a depth that lies above the top surface of a channel layer that touches and lies below the barrier layer.