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1.发明授权Metalorganic chemical vapor deposition of oxide dielectrics on N-polar III-nitride semiconductors with high interface quality and tunable fixed interface charge 有权在具有高界面质量和可调谐固定界面电荷的N-极性III族氮化物半导体上的氧化物电介质的金属有机化学气相沉积公开(公告)号：US09281183B2
公开(公告)日：2016-03-08
申请号：US14597989
申请日：2015-01-15
Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Inventor： Xiang Liu , Umesh K. Mishra , Stacia Keller , Jeonghee Kim , Matthew Laurent , Jing Lu , Ramya Yeluri , Silvia H. Chan
CPC classification number: H01L29/7787 , C30B25/02 , C30B29/20 , C30B29/406 , H01L21/02178 , H01L21/02271 , H01L21/0254 , H01L21/0257 , H01L21/0262 , H01L21/28264 , H01L29/2003 , H01L29/517 , H01L29/66462 , H01L29/7781
Abstract: A method of fabricating a III-nitride semiconductor device, including growing an III-nitride semiconductor and an oxide sequentially to form an oxide/III-nitride interface, without exposure to air in between growth of the oxide and growth of the III-nitride semiconductor.
Abstract translation: 一种制造III族氮化物半导体器件的方法，包括在氧化物生长和III族氮化物半导体的生长之间不暴露于空气中，依次生长III族氮化物半导体和氧化物以形成氧化物/ III族氮化物界面 。
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公开(公告)号：US20160163846A1
公开(公告)日：2016-06-09
申请号：US15009509
申请日：2016-01-28
Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Inventor： Xiang Liu , Umesh K. Mishra , Stacia Keller , Jeonghee Kim , Matthew Laurent , Jing Lu , Ramya Yeluri , Silvia H. Chan
IPC: H01L29/778 , H01L29/66
CPC classification number: H01L29/7787 , C30B25/02 , C30B29/20 , C30B29/406 , H01L21/02178 , H01L21/02271 , H01L21/0254 , H01L21/0257 , H01L21/0262 , H01L21/28264 , H01L29/2003 , H01L29/517 , H01L29/66462 , H01L29/7781
Abstract: A method of fabricating a III-nitride semiconductor device, including growing an III-nitride semiconductor and an oxide sequentially to form an oxide/III-nitride interface, without exposure to air in between growth of the oxide and growth of the III-nitride semiconductor.
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3.发明申请METALORGANIC CHEMICAL VAPOR DEPOSITION OF OXIDE DIELECTRICS ON N-POLAR III-NITRIDE SEMICONDUCTORS WITH HIGH INTERFACE QUALITY AND TUNABLE FIXED INTERFACE CHARGE 有权金属化学气相沉积在具有高界面质量和可调固定界面电荷的N-极III-氮化物半导体上的氧化物电介质公开(公告)号：US20150200286A1
公开(公告)日：2015-07-16
申请号：US14597989
申请日：2015-01-15
Applicant: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
Inventor： Xiang Liu , Umesh K. Mishra , Stacia Keller , Jeonghee Kim , Matthew Laurent , Jing Lu , Ramya Yeluri , Silvia H. Chan
IPC: H01L29/778 , H01L21/02 , H01L29/66
CPC classification number: H01L29/7787 , C30B25/02 , C30B29/20 , C30B29/406 , H01L21/02178 , H01L21/02271 , H01L21/0254 , H01L21/0257 , H01L21/0262 , H01L21/28264 , H01L29/2003 , H01L29/517 , H01L29/66462 , H01L29/7781
Abstract: A method of fabricating a III-nitride semiconductor device, including growing an III-nitride semiconductor and an oxide sequentially to form an oxide/III-nitride interface, without exposure to air in between growth of the oxide and growth of the III-nitride semiconductor.
Abstract translation: 一种制造III族氮化物半导体器件的方法，包括在氧化物生长和III族氮化物半导体的生长之间不暴露于空气中，依次生长III族氮化物半导体和氧化物以形成氧化物/ III族氮化物界面 。
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