Solid-state image sensor
    1.
    发明授权

    公开(公告)号:US10910425B2

    公开(公告)日:2021-02-02

    申请号:US16432504

    申请日:2019-06-05

    Abstract: A solid-state image sensor including a semiconductor layer having a light incident side, a support substrate positioned on an opposite side of the light incident side of the semiconductor layer, photoelectric conversion elements formed two-dimensionally in the semiconductor layer, light reflection structures formed on a surface of the support substrate which faces toward the semiconductor layer, and positioned such that the light reflection structures face the photoelectric conversion elements, respectively, and an interlayer insulating layer formed between adjacent ones of the light reflection structures. The light reflection structures include a light transmission layer and a reflective metal that covers a surface of the light transmission layer opposite to a surface facing the semiconductor layer, and the reflective metal has a concave curved surface facing the photoelectric conversion elements.

    Reflective mask blank and reflective mask, and methods for manufacturing reflective mask blank and reflective mask
    2.
    发明授权
    Reflective mask blank and reflective mask, and methods for manufacturing reflective mask blank and reflective mask 有权
    反光罩和反光罩,以及反光罩和反光罩的制造方法

    公开(公告)号:US09448468B2

    公开(公告)日:2016-09-20

    申请号:US14227705

    申请日:2014-03-27

    CPC classification number: G03F1/24 G03F1/146 G03F1/38

    Abstract: A reflective mask blank, a reflective mask, and methods for manufacturing those, which suppress reflectance at a light-shielding frame. The reflective mask includes a substrate, a multilayered reflective layer formed on the substrate, an absorption layer formed on the multilayered reflective layer, and a frame-shaped light-shielding frame area at which the absorption layer has a film thickness larger than a film thickness at other areas. The multilayered reflective layer is diffused and mixed at the light-shielding frame area through melting.

    Abstract translation: 反射型掩模坯料,反射型掩模,以及抑制遮光框的反射率的制造方法。 反射掩模包括基板,形成在基板上的多层反射层,形成在多层反射层上的吸收层和吸收层的膜厚大于膜厚的框状遮光框区域 在其他地区。 多层反射层通过熔化在遮光框架区域扩散混合。

    Mask blank for reflection-type exposure, and mask for reflection-type exposure
    3.
    发明授权
    Mask blank for reflection-type exposure, and mask for reflection-type exposure 有权
    用于反射型曝光的掩模空白,以及用于反射型曝光的掩模

    公开(公告)号:US09442364B2

    公开(公告)日:2016-09-13

    申请号:US14221994

    申请日:2014-03-21

    CPC classification number: G03F1/24 G03F1/38 G03F1/40 G03F1/60

    Abstract: A reflective exposure mask blank and a reflective exposure mask are provided, and the mask enables accurate exposure and transcription without having light being reflected from areas other than a circuit pattern area. The reflective mask blank has, on a substrate (11), a multilayer reflective film (12), a protective film (13), an absorption film (14), and a reverse-surface conductive film (15). A reverse-surface conductive film is formed from indium tin oxide. The substrate contains SiO2, TiO2, and at least one oxide of manganese (Mn), copper (Cu), cobalt (Co), chromium (Cr), iron (Fe), silver (Ag), nickel (Ni), sulfur (S), selenium (Se), gold (Au), and neodymium (Nd). The reflective mask is manufactured by forming a circuit pattern by selectively stripping the absorption film on the reflective mask blank, and forming a light-shielding frame by stripping the multilayer reflective film, the protective film, and the absorption film around the circuit pattern.

    Abstract translation: 提供反射曝光掩模空白和反射曝光掩模,并且掩模能够准确地曝光和转录,而不会使光从电路图案区域以外的区域反射。 反射掩模板在基板(11)上具有多层反射膜(12),保护膜(13),吸收膜(14)和反面导电膜(15)。 背面导电膜由氧化铟锡形成。 基体包含SiO 2,TiO 2和至少一种锰(Mn),铜(Cu),钴(Co),铬(Cr),铁(Fe),银(Ag),镍(Ni) S),硒(Se),金(Au)和钕(Nd)。 通过选择性地剥离反射掩模板上的吸收膜形成电路图案,并通过剥离电路图案周围的多层反射膜,保护膜和吸收膜来形成遮光框来制造反射掩模。

    REFLECTIVE MASK AND METHOD FOR MANUFACTURING SAME
    4.
    发明申请
    REFLECTIVE MASK AND METHOD FOR MANUFACTURING SAME 有权
    反射掩模及其制造方法

    公开(公告)号:US20140170536A1

    公开(公告)日:2014-06-19

    申请号:US14187885

    申请日:2014-02-24

    CPC classification number: G03F1/24 B82Y10/00 B82Y40/00 G03F1/38

    Abstract: A reflective mask having a light-shielding frame with high light-shielding performance, and a method for manufacturing thereof. In a reflective mask having a light-shielding frame dug into a multilayered reflective layer, when side etching is performed or processing to obtain a reverse tapered shape is performed only on the multilayered reflective layer, it becomes possible to suppress reflection of EUV light (extreme ultraviolet light) in the vicinity of the edge of the light-shielding frame, provide a reflective mask having high light-shielding ability, and form a transcription pattern with high accuracy.

    Abstract translation: 具有遮光性能好的遮光框的反射罩及其制造方法。 在具有被切割成多层反射层的遮光框的反射掩模中,当进行侧面蚀刻时,仅在多层反射层上进行反转锥形形状的处理,可以抑制EUV光的反射(极端 紫外光)在遮光框的边缘附近,提供了具有高遮光能力的反射掩模,并且以高精度形成转录图案。

    Reflective mask and method for manufacturing same
    5.
    发明授权
    Reflective mask and method for manufacturing same 有权
    反光罩及其制造方法

    公开(公告)号:US09285672B2

    公开(公告)日:2016-03-15

    申请号:US14187885

    申请日:2014-02-24

    CPC classification number: G03F1/24 B82Y10/00 B82Y40/00 G03F1/38

    Abstract: A reflective mask having a light-shielding frame with high light-shielding performance, and a method for manufacturing thereof. In a reflective mask having a light-shielding frame dug into a multilayered reflective layer, when side etching is performed or processing to obtain a reverse tapered shape is performed only on the multilayered reflective layer, it becomes possible to suppress reflection of EUV light (extreme ultraviolet light) in the vicinity of the edge of the light-shielding frame, provide a reflective mask having high light-shielding ability, and form a transcription pattern with high accuracy.

    Abstract translation: 具有遮光性能好的遮光框的反射罩及其制造方法。 在具有被切割成多层反射层的遮光框的反射掩模中,当进行侧面蚀刻时,仅在多层反射层上进行反转锥形形状的处理,可以抑制EUV光的反射(极端 紫外光)在遮光框的边缘附近,提供了具有高遮光能力的反射掩模,并且以高精度形成转录图案。

    REFLECTIVE MASK BLANK AND REFLECTIVE MASK, AND METHODS FOR MANUFACTURING REFLECTIVE MASK BLANK AND REFLECTIVE MASK
    6.
    发明申请
    REFLECTIVE MASK BLANK AND REFLECTIVE MASK, AND METHODS FOR MANUFACTURING REFLECTIVE MASK BLANK AND REFLECTIVE MASK 有权
    反射面罩和反光面罩,以及制造反光面罩和反光面罩的方法

    公开(公告)号:US20140212795A1

    公开(公告)日:2014-07-31

    申请号:US14227705

    申请日:2014-03-27

    CPC classification number: G03F1/24 G03F1/146 G03F1/38

    Abstract: A reflective mask blank, a reflective mask, and methods for manufacturing those, which suppress reflectance at a light-shielding frame. The reflective mask includes a substrate, a multilayered reflective layer formed on the substrate, an absorption layer formed on the multilayered reflective layer, and a frame-shaped light-shielding frame area at which the absorption layer has a film thickness larger than a film thickness at other areas. The multilayered reflective layer is diffused and mixed at the light-shielding frame area through melting.

    Abstract translation: 反射型掩模坯料,反射型掩模,以及抑制遮光框的反射率的制造方法。 反射掩模包括基板,形成在基板上的多层反射层,形成在多层反射层上的吸收层和吸收层的膜厚大于膜厚的框状遮光框区域 在其他地区。 多层反射层通过熔化在遮光框架区域扩散混合。

Patent Agency Ranking