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    Reduced cross-talk in color and infrared image sensor
    1.
    发明授权
    Reduced cross-talk in color and infrared image sensor 有权

    公开(公告)号：US12148783B2

    公开(公告)日：2024-11-19

    申请号：US17216955

    申请日：2021-03-30

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Keng-Yu Chou ,  Cheng Yu Huang ,  Chun-Hao Chuang ,  Wen-Hau Wu ,  Wei-Chieh Chiang ,  Wen-Chien Yu ,  Chih-Kung Chang

    IPC: H01L27/146 ,  G02B5/20

    Abstract: Various embodiments of the present disclosure are directed towards an image sensor device including a first image sensor element and a second image sensor element disposed within a substrate. An interconnect structure is disposed along a front-side surface of the substrate and comprises a plurality of conductive wires, a plurality of conductive vias, and a first absorption structure. The first image sensor element is configured to generate electrical signals from electromagnetic radiation within a first range of wavelengths. The second image sensor element is configured to generate electrical signals from the electromagnetic radiation within a second range of wavelengths that is different than the first range of wavelengths. The second image sensor element is laterally adjacent to the first image sensor element. Further, the first image sensor element overlies the first absorption structure and is spaced laterally between opposing sidewalls of the first absorption structure.

    Trench isolation structure for scaled pixel region
    2.
    发明授权
    Trench isolation structure for scaled pixel region 有权

    公开(公告)号：US12062678B2

    公开(公告)日：2024-08-13

    申请号：US17372866

    申请日：2021-07-12

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Cheng Yu Huang ,  Wei-Chieh Chiang ,  Keng-Yu Chou ,  Tzu-Hsuan Hsu

    IPC: H01L27/146

    CPC classification number: H01L27/1463 ,  H01L27/14607 ,  H01L27/14612 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14683

    Abstract: The present disclosure, in some embodiments, relates to an image sensor integrated chip. The image sensor integrated chip includes a substrate having a first side and a second side opposing the first side. The substrate has one or more sidewalls defining a trench extending along opposing sides of a pixel region having a first width. An isolation structure including one or more dielectric materials is disposed within the trench. The isolation structure has a second width. An image sensing element and a focal region are disposed within the pixel region. The focal region is configured to receive incident radiation along the second side of the substrate. A ratio of the second width to the first width is in a range of between approximately 0.1 and approximately 0.2, so that the focal region is completely confined between interior sidewall of the isolation structure facing the image sensing element.

    Trench isolation structure for image sensors
    3.
    发明授权
    Trench isolation structure for image sensors 有权

    公开(公告)号：US11862654B2

    公开(公告)日：2024-01-02

    申请号：US17150014

    申请日：2021-01-15

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Cheng Yu Huang ,  Chun-Hao Chuang ,  Keng-Yu Chou ,  Wei-Chieh Chiang ,  Chin-Chia Kuo ,  Wen-Hau Wu ,  Hua-Mao Chen ,  Chih-Kung Chang

    IPC: H01L27/146

    CPC classification number: H01L27/14632 ,  H01L27/14687 ,  H01L27/14643

    Abstract: Various embodiments of the present disclosure are directed towards an image sensor, and a method for forming the image sensor, in which an inter-pixel trench isolation structure is defined by a low-transmission layer. In some embodiments, the image sensor comprises an array of pixels and the inter-pixel trench isolation structure. The array of pixels is on a substrate, and the pixels of the array comprise individual photodetectors in the substrate. The inter-pixel trench isolation structure is in the substrate. Further, the inter-pixel trench isolation structure extends along boundaries of the pixels, and individually surrounds the photodetectors, to separate the photodetectors from each other. The inter-pixel trench isolation structure is defined by a low-transmission layer with low transmission for incident radiation, such that the inter-pixel trench isolation structure has low transmission for incident radiation. The low-transmission layer may, for example, be or comprise metal and/or some other suitable material(s).

    TRENCH ISOLATION STRUCTURE FOR IMAGE SENSORS
    4.
    发明申请
    TRENCH ISOLATION STRUCTURE FOR IMAGE SENSORS 有权

    公开(公告)号：US20220231066A1

    公开(公告)日：2022-07-21

    申请号：US17150014

    申请日：2021-01-15

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Cheng Yu Huang ,  Chun-Hao Chuang ,  Keng-Yu Chou ,  Wei-Chieh Chiang ,  Chin-Chia Kuo ,  Wen-Hau Wu ,  Hua-Mao Chen ,  Chih-Kung Chang

    IPC: H01L27/146

    Abstract: Various embodiments of the present disclosure are directed towards an image sensor, and a method for forming the image sensor, in which an inter-pixel trench isolation structure is defined by a low-transmission layer. In some embodiments, the image sensor comprises an array of pixels and the inter-pixel trench isolation structure. The array of pixels is on a substrate, and the pixels of the array comprise individual photodetectors in the substrate. The inter-pixel trench isolation structure is in the substrate. Further, the inter-pixel trench isolation structure extends along boundaries of the pixels, and individually surrounds the photodetectors, to separate the photodetectors from each other. The inter-pixel trench isolation structure is defined by a low-transmission layer with low transmission for incident radiation, such that the inter-pixel trench isolation structure has low transmission for incident radiation. The low-transmission layer may, for example, be or comprise metal and/or some other suitable material(s).

    Narrow band filter with high transmission
    6.
    发明授权
    Narrow band filter with high transmission 有权

    公开(公告)号：US10651220B2

    公开(公告)日：2020-05-12

    申请号：US16156061

    申请日：2018-10-10

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Cheng Yu Huang ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Kazuaki Hashimoto ,  Keng-Yu Chou ,  Wei-Chieh Chiang ,  Wen-Hau Wu

    IPC: H01L27/146 ,  H01L31/0216

    Abstract: Various embodiments of the present application are directed to a narrow band filter with high transmission and an image sensor comprising the narrow band filter. In some embodiments, the filter comprises a first distributed Bragg reflector (DBR), a second DBR, a defect layer between the first and second DBRs, and a plurality of columnar structures. The columnar structures extend through the defect layer and have a refractive index different than a refractive index of the defect layer. The first and second DBRs define a low transmission band, and the defect layer defines a high transmission band dividing the low transmission band. The columnar structures shift the high transmission band towards lower or higher wavelengths depending upon a refractive index of the columnar structures and a fill factor of the columnar structures.

    Narrow band filter with high transmission
    7.
    发明授权
    Narrow band filter with high transmission 有权

    公开(公告)号：US10991740B2

    公开(公告)日：2021-04-27

    申请号：US16837351

    申请日：2020-04-01

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Cheng Yu Huang ,  Chun-Hao Chuang ,  Chien-Hsien Tseng ,  Kazuaki Hashimoto ,  Keng-Yu Chou ,  Wei-Chieh Chiang ,  Wen-Hau Wu

    IPC: H01L27/146

    Abstract: Various embodiments of the present application are directed to a narrow band filter with high transmission and an image sensor comprising the narrow band filter. In some embodiments, the filter comprises a first distributed Bragg reflector (DBR), a second DBR, a defect layer between the first and second DBRs, and a plurality of columnar structures. The columnar structures extend through the defect layer and have a refractive index different than a refractive index of the defect layer. The first and second DBRs define a low transmission band, and the defect layer defines a high transmission band dividing the low transmission band. The columnar structures shift the high transmission band towards lower or higher wavelengths depending upon a refractive index of the columnar structures and a fill factor of the columnar structures.

    Image sensor with scattering structure
    10.
    发明授权
    Image sensor with scattering structure 有权

    公开(公告)号：US12211871B2

    公开(公告)日：2025-01-28

    申请号：US17205158

    申请日：2021-03-18

    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

    Inventor： Cheng Yu Huang ,  Chun-Hao Chuang ,  Keng-Yu Chou ,  Wei-Chieh Chiang ,  Wen-Hau Wu ,  Chih-Kung Chang

    IPC: H01L27/146 ,  H01L31/107

    Abstract: The present disclosure relates to an integrated chip including a substrate and a pixel. The pixel includes a photodetector. The photodetector is in the substrate. The integrated chip further includes a first inner trench isolation structure and an outer trench isolation structure that extend into the substrate. The first inner trench isolation structure laterally surrounds the photodetector in a first closed loop. The outer trench isolation structure laterally surrounds the first inner trench isolation structure along a boundary of the pixel in a second closed loop and is laterally separated from the first inner trench isolation structure. Further, the integrated chip includes a scattering structure that is defined, at least in part, by the first inner trench isolation structure and that is configured to increase an angle at which radiation impinges on the outer trench isolation structure.

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