公开(公告)号：US20220384630A1

公开(公告)日：2022-12-01

申请号：US17883584

申请日：2022-08-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Ling YEH ,  Pravanshu Mohanta ,  Ching-Yu Chen ,  Jiang-He Xie ,  Yu-Shine Lin

IPC: H01L29/778 ,  H01L21/02 ,  H01L21/306 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66

Abstract: Disclosed is a semiconductor device and a method for fabricating such semiconductor device, specifically a High Electron Mobility Transistor (HEMT) with a back barrier layer for blocking electron leakage and improve threshold voltage. In one embodiment, a semiconductor device, includes: a Gallium Nitride (GaN) layer; a front barrier layer over the GaN layer; a source electrode, a drain electrode and a gate electrode formed over the front barrier layer; a 2-Dimensional Electron Gas (2-DEG) in the GaN layer at a first interface between the GaN layer and the front barrier layer; and a back barrier layer in the GaN layer, wherein the back barrier layer comprises Aluminum Nitride (AIN).

公开(公告)号：US09324603B2

公开(公告)日：2016-04-26

申请号：US13967558

申请日：2013-08-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shin-Yeu Tsai ,  Chia-Hui Lin ,  Ching-Yu Chen ,  Chui-Ya Peng

IPC: H01L21/762

CPC classification number: H01L21/76224 ,  H01L21/76229

Abstract: A method is disclosed that includes the operations outlined below. An insulating material is disposed within a plurality of trenches on a semiconductor substrate and over the semiconductor substrate. The first layer is formed over the insulating material. The first layer and the insulating material are removed.

Abstract translation: 公开了一种包括以下概述的操作的方法。 绝缘材料设置在半导体衬底上并在半导体衬底之上的多个沟槽内。 第一层形成在绝缘材料上。 去除第一层和绝缘材料。

公开(公告)号：US11121230B2

公开(公告)日：2021-09-14

申请号：US16575668

申请日：2019-09-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Yu Chen ,  Wei-Ting Chang ,  Yu-Shine Lin ,  Jiang-He Xie

IPC: H01L29/66 ,  H01L29/778 ,  H01L29/207 ,  H01L29/10 ,  H01L21/02 ,  H01L29/20 ,  H01L29/205

Abstract: Structures and methods for controlling dopant diffusion and activation are disclosed. In one example, a semiconductor structure is disclosed. The semiconductor structure includes: a channel layer; a barrier layer over the channel layer; a gate electrode over the barrier layer; and a doped layer formed between the barrier layer and the gate electrode. The doped layer includes (a) an interface layer in contact with the barrier layer and (b) a main layer between the interface layer and the gate electrode. The doped layer comprises a dopant whose doping concentration in the interface layer is lower than that in the main layer.

公开(公告)号：US11855199B2

公开(公告)日：2023-12-26

申请号：US17083715

申请日：2020-10-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Ling Yeh ,  Pravanshu Mohanta ,  Ching-Yu Chen ,  Jiang-He Xie ,  Yu-Shine Lin

IPC: H01L29/778 ,  H01L21/02 ,  H01L21/306 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66

CPC classification number: H01L29/7786 ,  H01L21/0254 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/30612 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66462

Abstract: Disclosed is a semiconductor device and a method for fabricating such semiconductor device, specifically a High Electron Mobility Transistor (HEMT) with a back barrier layer for blocking electron leakage and improve threshold voltage. In one embodiment, a semiconductor device, includes: a Gallium Nitride (GaN) layer; a front barrier layer over the GaN layer; a source electrode, a drain electrode and a gate electrode formed over the front barrier layer; a 2-Dimensional Electron Gas (2-DEG) in the GaN layer at a first interface between the GaN layer and the front barrier layer; and a back barrier layer in the GaN layer, wherein the back barrier layer comprises Aluminum Nitride (AlN).

公开(公告)号：US11843042B2

公开(公告)日：2023-12-12

申请号：US17405922

申请日：2021-08-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Yu Chen ,  Wei-Ting Chang ,  Yu-Shine Lin ,  Jiang-He Xie

IPC: H01L29/66 ,  H01L29/778 ,  H01L29/207 ,  H01L29/10 ,  H01L21/02 ,  H01L29/20 ,  H01L29/205

CPC classification number: H01L29/66462 ,  H01L21/0254 ,  H01L21/02579 ,  H01L29/10 ,  H01L29/207 ,  H01L29/7787 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/205

Abstract: Structures and methods for controlling dopant diffusion and activation are disclosed. In one example, a semiconductor structure is disclosed. The semiconductor structure includes: a channel layer; a barrier layer over the channel layer; a gate electrode over the barrier layer; and a doped layer formed between the barrier layer and the gate electrode. The doped layer includes (a) an interface layer in contact with the barrier layer and (b) a main layer between the interface layer and the gate electrode. The doped layer comprises a dopant whose doping concentration in the interface layer is lower than that in the main layer.

公开(公告)号：US20150048475A1

公开(公告)日：2015-02-19

申请号：US13967558

申请日：2013-08-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shin-Yeu Tsai ,  Chia-Hui Lin ,  Ching-Yu Chen ,  Chui-Ya Peng

IPC: H01L29/06 ,  H01L21/762

CPC classification number: H01L21/76224 ,  H01L21/76229

Abstract: A method is disclosed that includes the operations outlined below. An insulating material is disposed within a plurality of trenches on a semiconductor substrate and over the semiconductor substrate. The first layer is formed over the insulating material. The first layer and the insulating material are removed.

Abstract translation: 公开了一种包括以下概述的操作的方法。 绝缘材料设置在半导体衬底上并在半导体衬底之上的多个沟槽内。 第一层形成在绝缘材料上。 去除第一层和绝缘材料。