公开(公告)号：US10739682B2

公开(公告)日：2020-08-11

申请号：US16693900

申请日：2019-11-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ying-Hao Wang ,  Chia-Chi Chung ,  Han-Chih Chung ,  Yu-Xiang Lin ,  Yu-Shine Lin ,  Yu-Hen Wu ,  Han Wen Hsu

IPC: G03F7/20 ,  H01L21/027 ,  H01L21/67 ,  H01L21/68 ,  H01L21/687 ,  H01L21/02 ,  H01L33/00

Abstract: Various embodiments of the present application are directed towards an edge-exposure tool with a light emitting diode (LED), as well as a method for edge exposure using a LED. In some embodiments, the edge-exposure tool comprises a process chamber, a workpiece table, a LED, and a controller. The workpiece table is in the process chamber and is configured to support a workpiece covered by a photosensitive layer. The LED is in the process chamber and is configured to emit radiation towards the workpiece. A controller is configured to control the LED to expose an edge portion of the photosensitive layer, but not a center portion of the photosensitive layer, to the radiation emitted by the LED. The edge portion of the photosensitive layer extends along an edge of the workpiece in a closed path to enclose the center portion of the photosensitive layer.

公开(公告)号：US11121230B2

公开(公告)日：2021-09-14

申请号：US16575668

申请日：2019-09-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Yu Chen ,  Wei-Ting Chang ,  Yu-Shine Lin ,  Jiang-He Xie

IPC: H01L29/66 ,  H01L29/778 ,  H01L29/207 ,  H01L29/10 ,  H01L21/02 ,  H01L29/20 ,  H01L29/205

Abstract: Structures and methods for controlling dopant diffusion and activation are disclosed. In one example, a semiconductor structure is disclosed. The semiconductor structure includes: a channel layer; a barrier layer over the channel layer; a gate electrode over the barrier layer; and a doped layer formed between the barrier layer and the gate electrode. The doped layer includes (a) an interface layer in contact with the barrier layer and (b) a main layer between the interface layer and the gate electrode. The doped layer comprises a dopant whose doping concentration in the interface layer is lower than that in the main layer.

公开(公告)号：US10295909B2

公开(公告)日：2019-05-21

申请号：US15903879

申请日：2018-02-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ying-Hao Wang ,  Chia-Chi Chung ,  Han-Chih Chung ,  Yu-Xiang Lin ,  Yu-Shine Lin ,  Yu-Hen Wu ,  Han Wen Hsu

IPC: G03F7/20 ,  H01L21/027 ,  H01L21/67 ,  H01L21/687 ,  H01L33/00 ,  H01L21/02

Abstract: Various embodiments of the present application are directed towards an edge-exposure tool with a light emitting diode (LED), as well as a method for edge exposure using a LED. In some embodiments, the edge-exposure tool comprises a process chamber, a workpiece table, a LED, and a controller. The workpiece table is in the process chamber and is configured to support a workpiece covered by a photosensitive layer. The LED is in the process chamber and is configured to emit radiation towards the workpiece. A controller is configured to control the LED to expose an edge portion of the photosensitive layer, but not a center portion of the photosensitive layer, to the radiation emitted by the LED. The edge portion of the photosensitive layer extends along an edge of the workpiece in a closed path to enclose the center portion of the photosensitive layer.

公开(公告)号：US11855199B2

公开(公告)日：2023-12-26

申请号：US17083715

申请日：2020-10-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Ling Yeh ,  Pravanshu Mohanta ,  Ching-Yu Chen ,  Jiang-He Xie ,  Yu-Shine Lin

IPC: H01L29/778 ,  H01L21/02 ,  H01L21/306 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66

CPC classification number: H01L29/7786 ,  H01L21/0254 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/30612 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/66462

Abstract: Disclosed is a semiconductor device and a method for fabricating such semiconductor device, specifically a High Electron Mobility Transistor (HEMT) with a back barrier layer for blocking electron leakage and improve threshold voltage. In one embodiment, a semiconductor device, includes: a Gallium Nitride (GaN) layer; a front barrier layer over the GaN layer; a source electrode, a drain electrode and a gate electrode formed over the front barrier layer; a 2-Dimensional Electron Gas (2-DEG) in the GaN layer at a first interface between the GaN layer and the front barrier layer; and a back barrier layer in the GaN layer, wherein the back barrier layer comprises Aluminum Nitride (AlN).

公开(公告)号：US11843042B2

公开(公告)日：2023-12-12

申请号：US17405922

申请日：2021-08-18

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Yu Chen ,  Wei-Ting Chang ,  Yu-Shine Lin ,  Jiang-He Xie

IPC: H01L29/66 ,  H01L29/778 ,  H01L29/207 ,  H01L29/10 ,  H01L21/02 ,  H01L29/20 ,  H01L29/205

CPC classification number: H01L29/66462 ,  H01L21/0254 ,  H01L21/02579 ,  H01L29/10 ,  H01L29/207 ,  H01L29/7787 ,  H01L21/0262 ,  H01L29/2003 ,  H01L29/205

Abstract: Structures and methods for controlling dopant diffusion and activation are disclosed. In one example, a semiconductor structure is disclosed. The semiconductor structure includes: a channel layer; a barrier layer over the channel layer; a gate electrode over the barrier layer; and a doped layer formed between the barrier layer and the gate electrode. The doped layer includes (a) an interface layer in contact with the barrier layer and (b) a main layer between the interface layer and the gate electrode. The doped layer comprises a dopant whose doping concentration in the interface layer is lower than that in the main layer.

公开(公告)号：US20220384630A1

公开(公告)日：2022-12-01

申请号：US17883584

申请日：2022-08-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Ling YEH ,  Pravanshu Mohanta ,  Ching-Yu Chen ,  Jiang-He Xie ,  Yu-Shine Lin

IPC: H01L29/778 ,  H01L21/02 ,  H01L21/306 ,  H01L29/20 ,  H01L29/205 ,  H01L29/66

Abstract: Disclosed is a semiconductor device and a method for fabricating such semiconductor device, specifically a High Electron Mobility Transistor (HEMT) with a back barrier layer for blocking electron leakage and improve threshold voltage. In one embodiment, a semiconductor device, includes: a Gallium Nitride (GaN) layer; a front barrier layer over the GaN layer; a source electrode, a drain electrode and a gate electrode formed over the front barrier layer; a 2-Dimensional Electron Gas (2-DEG) in the GaN layer at a first interface between the GaN layer and the front barrier layer; and a back barrier layer in the GaN layer, wherein the back barrier layer comprises Aluminum Nitride (AIN).

公开(公告)号：US20200089120A1

公开(公告)日：2020-03-19

申请号：US16693900

申请日：2019-11-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ying-Hao Wang ,  Chia-Chi Chung ,  Han-Chih Chung ,  Yu-Xiang Lin ,  Yu-Shine Lin ,  Yu-Hen Wu ,  Han Wen Hsu

IPC: G03F7/20 ,  H01L21/027 ,  H01L21/67 ,  H01L21/687 ,  H01L33/00 ,  H01L21/02 ,  H01L21/68

Abstract: Various embodiments of the present application are directed towards an edge-exposure tool with a light emitting diode (LED), as well as a method for edge exposure using a LED. In some embodiments, the edge-exposure tool comprises a process chamber, a workpiece table, a LED, and a controller. The workpiece table is in the process chamber and is configured to support a workpiece covered by a photosensitive layer. The LED is in the process chamber and is configured to emit radiation towards the workpiece. A controller is configured to control the LED to expose an edge portion of the photosensitive layer, but not a center portion of the photosensitive layer, to the radiation emitted by the LED. The edge portion of the photosensitive layer extends along an edge of the workpiece in a closed path to enclose the center portion of the photosensitive layer.

公开(公告)号：US10509323B2

公开(公告)日：2019-12-17

申请号：US16391521

申请日：2019-04-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ying-Hao Wang ,  Chia-Chi Chung ,  Han-Chih Chung ,  Yu-Xiang Lin ,  Yu-Shine Lin ,  Yu-Hen Wu ,  Han Wen Hsu

IPC: G03F7/20 ,  H01L21/027 ,  H01L21/67 ,  H01L21/687 ,  H01L33/00 ,  H01L21/02 ,  H01L21/68

Abstract: Various embodiments of the present application are directed towards an edge-exposure tool with a light emitting diode (LED), as well as a method for edge exposure using a LED. In some embodiments, the edge-exposure tool comprises a process chamber, a workpiece table, a LED, and a controller. The workpiece table is in the process chamber and is configured to support a workpiece covered by a photosensitive layer. The LED is in the process chamber and is configured to emit radiation towards the workpiece. A controller is configured to control the LED to expose an edge portion of the photosensitive layer, but not a center portion of the photosensitive layer, to the radiation emitted by the LED. The edge portion of the photosensitive layer extends along an edge of the workpiece in a closed path to enclose the center portion of the photosensitive layer.

公开(公告)号：US20190250513A1

公开(公告)日：2019-08-15

申请号：US16391521

申请日：2019-04-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ying-Hao Wang ,  Chia-Chi Chung ,  Han-Chih Chung ,  Yu-Xiang Lin ,  Yu-Shine Lin ,  Yu-Hen Wu ,  Han Wen Hsu

IPC: G03F7/20 ,  H01L33/00 ,  H01L21/687 ,  H01L21/67 ,  H01L21/02 ,  H01L21/027 ,  H01L21/68

Abstract: Various embodiments of the present application are directed towards an edge-exposure tool with a light emitting diode (LED), as well as a method for edge exposure using a LED. In some embodiments, the edge-exposure tool comprises a process chamber, a workpiece table, a LED, and a controller. The workpiece table is in the process chamber and is configured to support a workpiece covered by a photosensitive layer. The LED is in the process chamber and is configured to emit radiation towards the workpiece. A controller is configured to control the LED to expose an edge portion of the photosensitive layer, but not a center portion of the photosensitive layer, to the radiation emitted by the LED. The edge portion of the photosensitive layer extends along an edge of the workpiece in a closed path to enclose the center portion of the photosensitive layer.

公开(公告)号：US20190094697A1

公开(公告)日：2019-03-28

申请号：US15903879

申请日：2018-02-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ying-Hao Wang ,  Chia-Chi Chung ,  Han-Chih Chung ,  Yu-Xiang Lin ,  Yu-Shine Lin ,  Yu-Hen Wu ,  Han Wen Hsu

IPC: G03F7/20 ,  H01L21/027 ,  H01L21/67 ,  H01L21/02 ,  H01L21/687 ,  H01L33/00

Abstract: Various embodiments of the present application are directed towards an edge-exposure tool with a light emitting diode (LED), as well as a method for edge exposure using a LED. In some embodiments, the edge-exposure tool comprises a process chamber, a workpiece table, a LED, and a controller. The workpiece table is in the process chamber and is configured to support a workpiece covered by a photosensitive layer. The LED is in the process chamber and is configured to emit radiation towards the workpiece. A controller is configured to control the LED to expose an edge portion of the photosensitive layer, but not a center portion of the photosensitive layer, to the radiation emitted by the LED. The edge portion of the photosensitive layer extends along an edge of the workpiece in a closed path to enclose the center portion of the photosensitive layer.