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公开(公告)号：US20240201439A1
公开(公告)日：2024-06-20
申请号：US18166460
申请日：2023-02-08
发明人： Feng-Wei KUO , Wen-Shiang Liao
IPC分类号： G02B6/124 , G02B6/136 , H01L23/00 , H01L25/00 , H01L25/065
CPC分类号： G02B6/1245 , G02B6/136 , H01L24/16 , H01L24/73 , H01L25/0657 , H01L25/50 , G02B2006/12104 , H01L2224/16146 , H01L2224/16225 , H01L2224/73204 , H01L2225/06517 , H01L2225/06568
摘要： A semiconductor package and a manufacturing method thereof are provided. A die stack in the semiconductor package includes a photonic die and an electronic die stacked on the photonic die by a face-to-face manner. A convex lens is disposed at a back surface of the electronic die, and is formed in an oval shape, such that optical beams can be collimated to have circular beam shape, as passing through the convex lens. In some embodiments, the semiconductor package includes more of the die stacks, and includes an interposer lying below the die stacks. In these embodiments, tilted reflectors are formed in the photonic dies and the interposer, to set up vertical optical paths between the interposer and the photonic dies, and lateral optical paths in the interposer. In this way, optical communication between the photonic dies can be established.
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公开(公告)号：US20230395535A1
公开(公告)日：2023-12-07
申请号：US18357704
申请日：2023-07-24
发明人： Feng-Wei KUO , Wen-Shiang LIAO
IPC分类号： H01L23/66 , H01L23/538 , H01L23/00 , H01L21/48 , H01L21/56 , H01L21/683 , H01Q9/04 , H01Q1/52 , H01L23/31
CPC分类号： H01L23/66 , H01L23/5383 , H01L23/5386 , H01L23/5389 , H01L24/20 , H01L24/19 , H01L21/4853 , H01L21/4857 , H01L21/565 , H01L21/568 , H01L21/6835 , H01Q9/0407 , H01Q1/52 , H01L23/3128 , H01L2224/214 , H01L2221/68372 , H01L2223/6677
摘要： A method of forming a semiconductor structure includes forming a photoresist over a first conductive pattern. The method further includes patterning the photoresist to define a plurality of first openings. The method further includes depositing a conductive material in each of the plurality of first openings. The method further includes disposing a molding material over the first conductive pattern, wherein the molding material surrounds a die. The method further includes removing a portion of the molding material to form a second opening. The method further includes disposing a dielectric material into the opening to form a dielectric member. The method further includes forming a redistribution structure over the molding material and the dielectric member, wherein the redistribution structure includes an antenna structure over the dielectric member and electrically connected to the die.
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公开(公告)号：US20230385515A1
公开(公告)日：2023-11-30
申请号：US18155980
申请日：2023-01-18
发明人： Feng-Wei KUO , Yu-Hao CHEN
IPC分类号： G06F30/394 , G06F30/398
CPC分类号： G06F30/394 , G06F30/398
摘要： Silicon Photonics (SiPh) device methods and systems include providing a PDK cell library with parameters for standard SiPh device parameterized cells (Pcells). A custom SiPh layout that includes a plurality of dummy layers defining a custom SiPh device Pcell is created. A schematic including a plurality of the standard SiPh device Pcells and the custom SiPh device Pcell is created, as well as a configuration database correlating the standard SiPh device Pcells and the custom SiPh Pcell to the schematic. The standard SiPh device Pcells and the custom SiPh Pcell are automatically placed and routed based on the configuration database. A plurality of LVS rules are determined based on the dummy layers, and conducting an LVS verification is conducted based on the LVS rules.
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公开(公告)号：US20230367145A1
公开(公告)日：2023-11-16
申请号：US18358820
申请日：2023-07-25
发明人： Feng-Wei KUO , Chewn-Pu JOU , Huan-Neng CHEN , Lan-Chou CHO
CPC分类号： G02F1/0147 , G02F1/2257 , G02F1/212 , G02F2201/063
摘要： A method of forming semiconductor device includes forming an active layer in a substrate including forming components of one or more transistors; forming an MD and gate (MDG) layer over the active layer including forming a gate line; forming a metal-to-S/D (MD) contact structure; and forming a waveguide between the gate line and the MD contact structure; forming a first interconnection layer over the MDG layer including forming a first via contact structure over the gate line; forming a second via contact structure over the MD contact structure; and forming a heater between the first and second via contact structures and over the waveguide.
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公开(公告)号：US20240210628A1
公开(公告)日：2024-06-27
申请号：US18599154
申请日：2024-03-07
发明人： Feng-Wei KUO , Hsing-Kuo HSIA , Chewn-Pu JOU
CPC分类号： G02B6/30 , G02B6/12002 , G02B6/124 , G02B6/32 , G02B6/34
摘要： A device for optical signal processing includes a first layer, a second layer and a waveguiding layer. A lens is disposed within the first layer and adjacent to a surface of the first layer. The second layer is underneath the first layer and adjacent to another surface of the first layer. The waveguiding layer is located underneath the second layer and configured to waveguide a light beam transmitted in the waveguiding layer. A grating coupler is disposed over the waveguiding layer. The lens is configured to receive, from one of the grating coupler or a light-guiding element, the light beam, and focus the light beam towards another one of the light-guiding element or the grating coupler.
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公开(公告)号：US20230194908A1
公开(公告)日：2023-06-22
申请号：US18166472
申请日：2023-02-08
发明人： Lan-Chou Cho , Chewn-Pu Jou , Feng-Wei KUO , Huan-Neng Chen , Min-Hsiang Hsu
IPC分类号： G02F1/025
CPC分类号： G02F1/025 , G02F2201/302 , G02F1/0151
摘要： An optical modulator includes a carrier and a waveguide disposed on the carrier. The waveguide includes a first optical coupling region, a second optical coupling region, first regions, and second regions. The first optical coupling region is doped with first dopants. The second optical coupling region abuts the first optical coupling region and is doped with second dopants. The first dopants and the second dopants are of different conductivity type. The first regions are doped with the first dopants and are arrange adjacent to the first optical coupling region. The first regions have respective increasing doping concentrations as distances of the first regions increase from the first optical coupling region. The second regions are doped with the second dopants and are arranged adjacent to the second optical coupling region. The second regions have respective increasing doping concentrations as distances of the second regions increase from the second optical coupling region.
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公开(公告)号：US20220350177A1
公开(公告)日：2022-11-03
申请号：US17865191
申请日：2022-07-14
发明人： Feng-Wei KUO , Chewn-Pu JOU , Huan-Neng CHEN , Lan-Chou CHO
摘要： A method of forming semiconductor device includes forming an active layer in a substrate including forming components of one or more transistors; forming an MD and gate (MDG) layer over the active layer including forming a gate line; forming a metal-to-S/D (MD) contact structure; and forming a waveguide between the gate line and the MD contact structure; forming a first interconnection layer over the MDG layer including forming a first via contact structure over the gate line; forming a second via contact structure over the MD contact structure; and forming a heater between the first and second via contact structures and over the waveguide.
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公开(公告)号：US20210327833A1
公开(公告)日：2021-10-21
申请号：US17118017
申请日：2020-12-10
发明人： Feng-Wei KUO , Wen-Shiang LIAO
IPC分类号： H01L23/66 , H01L23/31 , H01L23/538 , H01L23/00 , H01L21/48 , H01L21/56 , H01L21/683 , H01Q9/04 , H01Q1/52
摘要： A semiconductor structure includes a first redistribution structure, wherein the first redistribution structure includes first conductive pattern. The semiconductor structure further includes a die over the first redistribution structure. The semiconductor structure further includes a molding over the first redistribution structure, wherein the molding surrounds the die, and the molding has a first dielectric constant. The semiconductor structure further includes a dielectric member extending through the molding, wherein the dielectric member has a second dielectric constant different from the first dielectric constant. The semiconductor structure further includes a second redistribution structure over the die, the dielectric member and the molding, wherein the second redistribution layer includes an antenna over the dielectric member, and the antenna is electrically connected to the die.
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公开(公告)号：US20200003956A1
公开(公告)日：2020-01-02
申请号：US16417437
申请日：2019-05-20
发明人： Feng-Wei KUO , Lan-Chou CHO , Huan-Neng CHEN , Chewn-Pu JOU
摘要： Disclosed is a system and method for communication using an efficient fiber-to-chip grating coupler with a high coupling efficiency. In one embodiment, a method for communication, includes: transmitting optical signals between a semiconductor photonic die on a substrate and an optical fiber array attached to the substrate using at least one corresponding grating coupler on the semiconductor photonic die, wherein the at least one grating coupler each comprises a plurality of coupling gratings, a waveguide, a cladding layer, a first reflection layer and a second reflection layer, wherein the plurality of coupling gratings each comprises at least one step in a first lateral direction and extends in a second lateral direction, wherein the first and second lateral directions are parallel to a surface of the substrate and perpendicular to each other in a grating plane, wherein the first reflection layers are configured such that the plurality of coupling gratings is disposed between the first reflection layer and the cladding layer, wherein the second reflection layer are configured such that the cladding layer is disposed between the second reflection layer and the waveguide.
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公开(公告)号：US20240210619A1
公开(公告)日：2024-06-27
申请号：US18596662
申请日：2024-03-06
发明人： Feng-Wei KUO , Chewn-Pu JOU , Hsing-Kuo Hsia
CPC分类号： G02B6/12019 , G02B6/124 , G02B6/132 , H01S5/026 , G02B2006/12121
摘要： A device includes a dielectric layer, a plurality of grating structures, and a dielectric material between the plurality of grating structures and on top of the plurality of grating structures. The grating structures are arranged on the dielectric layer and separated from each other, the plurality of grating structures each having a bottom portion and top portion, the top portion having a first width and the bottom portion having a second width, the second width being larger than the first width.
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