摘要:
A multilayer ceramic chip capacitor includes alternately stacked dielectric layers and internal electrode layers. The dielectric layers contain barium titanate as a major component and magnesium oxide, manganese oxide, barium oxide and/or calcium oxide, silicon oxide and optionally, yttrium oxide as minor components in such a proportion that there are present 0.1-3 mol of MgO, 0.05-1.0 mol of MnO, 2-12 mol of BaO+CaO, 2-12 mol of SiO.sub.2 and up to 1 mol of Y.sub.2 O.sub.3 per 100 mol of BaTiO.sub.3. The capacitor satisfies the standard temperature dependence of capacitance and shows a minimized change of capacitance with time under an applied DC electric field and a long insulation resistance life. Where the dielectric layers contain 0.1-3 mol of MgO, 1-5 mol of Y.sub.2 O.sub.3, 2-12 mol of BaO+CaO, and 2-12 mol of SiO.sub.2 per 100 mol of BaTiO.sub.3, the capacitor shows improved DC bias performance.
摘要:
The invention provides a multilayer ceramic chip capacitor which satisfies X7R property or a temperature response of its capacitance and shows a minimal change of capacitance with time under a DC electric field, a long accelerated life of insulation resistance (IR) and good DC bias performance and also provides a multilayer ceramic chip capacitor which is resistant to dielectric breakdown in addition to the above advantages. In a first form of the invention, dielectric layers contain BaTiO.sub.3 as a major component and MgO, Y.sub.2 O.sub.3, at least one of BaO and CaO, and SiO.sub.2 as minor components in a specific proportion. In a second form, the dielectric layers further contain MnO and at least one of V.sub.2 O.sub.5 and MoO.sub.3 as minor components in a specific proportion. In the first form, the dielectric layer has a mean grain size of up to 0.45 .mu.m, and in an X-ray diffraction chart of the dielectric layer, a diffraction line of (200) plane and a diffraction line of (002) plane at least partially overlap one another to form a wide diffraction line which has a half-value width of up to 0.35.degree..
摘要:
A multilayer varistor comprising a varistor chip body having alternately stacked ceramic layers and internal electrode layers is provided. The ceramic layer is composed of a composite oxide containing Ti and/or Zr and Ba as a main component and Si and/or Al as a subordinate component, substantially free of Cr, and has a perovskite phase. The internal electrode layer is composed of a conductor containing a base metal such as Ni or Ni alloy as a main component. The varistor is used in an electric circuit for suppressing noise.
摘要:
The invention provides a multilayer ceramic chip capacitor which satisfies X7R property or a temperature response of its capacitance and shows a minimal change of capacitance with time under a DC electric field, a long accelerated life of insulation resistance (IR) and good DC bias performance and also provides a multilayer ceramic chip capacitor which is resistant to dielectric breakdown in addition to the above advantages. In a first form of the invention, dielectric layers contain BaTiO.sub.3 as a major component and MgO, Y.sub.2 O.sub.3, at least one of BaO and CaO, and SiO.sub.2 as minor components in a specific proportion. In a second form, the dielectric layers further contain MnO and at least one of V.sub.2 O.sub.5 and MoO.sub.3 as minor components in a specific proportion. In the first form, the dielectric layer has a mean grain size of up to 0.45 .mu.m, and in an X-ray diffraction chart of the dielectric layer, a diffraction line of (200) plane and a diffraction line of (002) plane at least partially overlap one another to form a wide diffraction line which has a half-value width of up to 0.35.degree..
摘要:
The invention provides a multilayer ceramic chip capacitor having internal electrodes and dielectric layers, wherein a dielectric material containing a dielectric oxide having a composition of the following formula:[(Ba.sub.1-x-y Ca.sub.x Sr.sub.y)O].sub.m (Ti.sub.1-z Zr.sub.z)O.sub.2wherein 0.ltoreq.x.ltoreq.0.25, 0.ltoreq.y.ltoreq.0.05, 0.1.ltoreq.z.ltoreq.0.3, and 1.000.ltoreq.m.ltoreq.1.020 and having added thereto an oxide of Mn and/or a compound which converts to the oxide upon firing in an amount of 0.01 to 0.5% by weight calculated as oxide (MnO), an oxide of Y and/or a compound which converts to the oxide upon firing in an amount of 0.05 to 0.5% by weight calculated as oxide (Y.sub.2 O.sub.3), an oxide of V and/or a compound which converts to the oxide upon firing in an amount of 0.005 to 0.3% by weight calculated as oxide (V.sub.2 O.sub.5), and an oxide of W and/or a compound which converts to the oxide upon firing in an amount of 0.005 to 0.3% by weight calculated as oxide (WO.sub.3), and an internal electrode-forming material in the form of Ni or a Ni alloy are successively layered and fired. The multilayer ceramic chip capacitor allows for low-temperature firing and has a long accelerated life of insulation resistance.
摘要翻译:本发明提供一种具有内部电极和电介质层的多层陶瓷片状电容器,其中包含具有下式的组成的电介质氧化物的介电材料:[(Ba1-x-yCaxSry)O] m(Ti1-zZrz)O2其中0 其中添加了Mn和/或其中的氧化物,其中, 以氧化物(MnO)计为0.01〜0.5重量%,Y的氧化物和/或以烧成后氧化物的化合物的0.05〜0.5质量%的化合物, 以氧化物(Y 2 O 3)计的氧化物,和/或以烧成后氧化物转化为氧化物的化合物,其氧化物(V 2 O 5)计为0.005〜0.3重量%,W和/或 以氧化物(WO3)计算的0.005〜0.3重量%的煅烧转化为氧化物的化合物和Ni或Ni合金形式的内部电极形成材料依次为l 点燃和开火。 该多层陶瓷片式电容器允许低温烧制并具有长的加速寿命的绝缘电阻。
摘要:
A composite substrate in which the surface of the insulating layer is not influenced by the electrode layer and which requires neither a grinding process nor a sol-gel process, is easy to produce and can provide a thin-film EL device having a high display quality when used therein; a thin-film EL device using the substrate; and a production process for the device. The thin-film EL device is produced by forming a luminescent layer, other insulating layer and other electrode layer successively on a composite substrate comprising a substrate; an electrode layer embedded in the substrate in such a manner that the electrode layer and the substrate are in one plane; and an insulating layer formed on the surface of a composite comprising the substrate and the electrode layer.
摘要:
A multilayer ceramic capacitor having a high dielectric constant, a large capacitance and a high reliability can be obtained by controlling a value of residual stress in it.
摘要:
A composite substrate in which the surface of the insulating layer is not influenced by the electrode layer and which requires neither a grinding process nor a sol-gel process, is easy to produce and can provide a thin-film EL device having a high display quality when used therein; a thin-film EL device using the substrate; and a production process for the device. The thin-film EL device is produced by forming a luminescent layer, other insulating layer and other electrode layer successively on a composite substrate comprising a substrate; an electrode layer embedded in the substrate in such a manner that the electrode layer and the substrate are in one plane; and an insulating layer formed on the surface of a composite comprising the substrate and the electrode layer.
摘要:
A multilayer ceramic capacitor having a high dielectric constant, a large capacitance and a high reliability can be obtained by controlling a value of residual stress in it.
摘要:
A method of production of a multilayer ceramic chip capacitor having a capacitor body configured by alternately stacked dielectric layers and internal electrode layers, having using as a powder ingredient of barium titanate for forming the dielectric layers a powder ingredient having a ratio (I(200)/Ib) of a peak intensity (I(200)) of a diffraction line of a (200) plane with respect to an intensity (Ib) at an intermediate point between an angle of a peak point of diffraction line of a (002) plane and an angle of a peak point of diffraction line of a (200) plane in an X-ray diffraction chart of 4 to 16.