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    Flying type optical head integrally formed with light source and photodetector and optical disk apparatus with the same
    1.
    发明授权
    Flying type optical head integrally formed with light source and photodetector and optical disk apparatus with the same 失效
    与光源和光电检测器一体形成的飞行型光学头及其光盘装置

    公开(公告)号：US06185177B2

    公开(公告)日：2001-02-06

    申请号：US09573610

    申请日：2000-05-19

    申请人： Takeshi Shimano ,  Kenchi Ito ,  Yooji Maruyama ,  Hiroyuki Awano

    发明人： Takeshi Shimano ,  Kenchi Ito ,  Yooji Maruyama ,  Hiroyuki Awano

    IPC分类号： G11B712

    CPC分类号： H01S5/18388 ,  B82Y20/00 ,  G02B6/12004 ,  G02B6/124 ,  G02B6/4246 ,  G02B2006/12107 ,  G11B7/122 ,  G11B7/123 ,  G11B7/1353 ,  G11B7/1374 ,  G11B7/13922 ,  G11B7/22 ,  G11B11/10532 ,  G11B11/10554 ,  G11B11/1058 ,  G11B2007/13727 ,  H01S5/0207 ,  H01S5/0215 ,  H01S5/0264 ,  H01S5/18305 ,  H01S5/18308 ,  H01S5/3432

    摘要： The optical head is arranged such that a semiconductor laser and a photodetector are formed via a buffer layer on the same substrate; and an opening portion is formed in the substrate under the semiconductor laser and the photodetector. This optical head is further arranged by that the opening portion is filled with a first transparent layer; a diffraction grating is formed on a lower surface of the first transparent layer; a second transparent layer is stacked on a lower surface of the first transparent layer; and a condenser lens is formed on a lower surface of the transparent layer. In this optical head, laser light emitted from the semiconductor laser is penetrated through the substrate, the first transparent layer, the diffraction grating, and the second transparent layer, and condensed toward a place just under the condenser lens by the condenser lens, thereby forming a light spot on an optical storage medium positioned apart from the condenser lens, whereas reflection light reflected from the optical storage medium is penetrated through the condenser lens and the second transparent layer, diffracted by the diffraction grating toward a light receiving plane of the photodetector, and further penetrated through the first transparent layer to be received by the photodetector.

    摘要翻译： 光头被布置成使得半导体激光器和光电检测器经由同一衬底上的缓冲层形成; 并且在半导体激光器下的基板和光电检测器中形成开口部。 该光头还通过开口部分填充有第一透明层而进一步布置; 衍射光栅形成在第一透明层的下表面上; 第二透明层堆叠在第一透明层的下表面上; 并且在透明层的下表面上形成聚光透镜。 在该光学头中，从半导体激光器发射的激光穿过基板，第一透明层，衍射光栅和第二透明层，并通过聚光透镜朝向聚光透镜正下方的位置冷凝，由此形成 位于离聚光透镜的光存储介质上的光点，而从光存储介质反射的反射光穿过聚光透镜和第二透明层，由衍射光栅衍射成光检测器的光接收面， 并且进一步穿透第一透明层以被光电检测器接收。

    MAGNETORESISTIVE EFFECT ELEMENT AND RANDOM ACCESS MEMORY USING SAME
    6.
    发明申请
    MAGNETORESISTIVE EFFECT ELEMENT AND RANDOM ACCESS MEMORY USING SAME 审中-公开
    使用相同的磁阻效应元件和随机存取存储器

    公开(公告)号：US20130107616A1

    公开(公告)日：2013-05-02

    申请号：US13808967

    申请日：2010-07-09

    申请人： Hideo Ohno ,  Shoji Ikeda ,  Hiroyuki Yamamoto ,  Kenchi Ito ,  Hiromasa Takahashi

    发明人： Hideo Ohno ,  Shoji Ikeda ,  Hiroyuki Yamamoto ,  Kenchi Ito ,  Hiromasa Takahashi

    IPC分类号： H01L29/82

    CPC分类号： H01L29/82 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/08

    摘要： A magnetoresistive effect element is provided that exhibits a low writing current density while maintaining a high TMR ratio. A laminated structure of a second ferromagnetic layer/a non-magnetic layer/a first ferromagnetic layer is employed as a recording layer. A material of bcc crystalline structure, such as CoFeB, is employed as a second ferromagnetic layer being in contact with MgO barrier layer. A material whose anisotropy field Hk⊥ in the perpendicular direction is large and that satisfies the relationship of 2πrMs

    摘要翻译： 提供了具有低写入电流密度同时保持高TMR比的磁阻效应元件。 采用第二铁磁层/非磁性层/第一铁磁层的叠层结构作为记录层。 使用诸如CoFeB的bcc晶体结构的材料作为与MgO阻挡层接触的第二铁磁层。 垂直方向的各向异性场Hk⊥大且满足2pirMs

    MAGNETIC MEMORY, METHOD OF MANUFACTURING THE SAME, AND METHOD OF DRIVING THE SAME
    7.
    发明申请
    MAGNETIC MEMORY, METHOD OF MANUFACTURING THE SAME, AND METHOD OF DRIVING THE SAME 有权
    磁记忆体，其制造方法及其驱动方法

    公开(公告)号：US20130044537A1

    公开(公告)日：2013-02-21

    申请号：US13522076

    申请日：2011-01-13

    申请人： Takashi Ishigaki ,  Takayuki Kawahara ,  Riichiro Takemura ,  Kazuo Ono ,  Kenchi Ito

    发明人： Takashi Ishigaki ,  Takayuki Kawahara ,  Riichiro Takemura ,  Kazuo Ono ,  Kenchi Ito

    IPC分类号： G11C11/16 ,  H01L43/12

    CPC分类号： H01L27/228 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/5607 ,  H01L29/82 ,  H01L43/08 ,  H01L43/12

    摘要： There is provided a magnetic memory with using a magnetoresistive effect element of a spin-injection magnetization reversal type, in which a multi-value operation is possible and whose manufacturing and operation are simple. A preferred aim of this is solved by providing two or more magnetoresistive effect elements which are electrically connected in series to each other and by selecting one of the series-connected elements depending on a direction of a current carried in the series-connected elements, a magnitude thereof, and an order of the current thereof for performing the writing operation. For example, it is solved by differentiating plane area sizes of the respective magnetoresistive effect elements which have the same film structure from each other so as to differentiate resistance change amounts caused by respective magnetization reversal and threshold current values required for respective magnetization reversal from each other.

    摘要翻译： 提供了一种使用自旋注入磁化反转型的磁阻效应元件的磁存储器，其中多值操作是可能的，其制造和操作简单。 优选的目的是通过提供两个或更多个彼此串联电连接的磁阻效应元件来解决，并且根据串联元件中承载的电流的方向选择串联元件之一， 其大小及其电流的顺序用于执行写入操作。 例如，通过将具有相同膜结构的各个磁阻效应元件的平面面积尺寸相互分离来解决，以便区分由相应的磁化反转引起的电阻变化量和相应磁化反转所需的阈值电流值 。

    SEMICONDUCTOR DEVICE
    8.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20090310400A1

    公开(公告)日：2009-12-17

    申请号：US12545379

    申请日：2009-08-21

    申请人： Riichiro Takemura ,  Takayuki Kawahara ,  Kenchi Ito ,  Hiromasa Takahashi

    发明人： Riichiro Takemura ,  Takayuki Kawahara ,  Kenchi Ito ,  Hiromasa Takahashi

    IPC分类号： G11C11/02

    CPC分类号： G11C11/16 ,  G11C8/08 ,  G11C11/1675 ,  H01L27/228

    摘要： In MRAM using a spin-transfer torque switching, a sufficient writing operation with a small memory cell is realized, and a reading current is enlarged while a reading disturbance is suppressed. In the case where the free layer of the tunnel magneto-resistance element is located on the side of the bit line, using a PMOS transistor, and in the case where the fixed layer of the tunnel magneto-resistance element is located on the side of the bit line, using an NMOS transistor, an anti-parallel writing in a source grounding operation is performed. The reading and writing operation margin is improved by performing a reading operation in an anti-parallel writing direction.

    摘要翻译： 在使用自旋转移转矩切换的MRAM中，实现了具有小存储单元的充分的写入操作，并且在读取干扰被抑制的同时增加读取电流。 在隧道磁阻元件的自由层位于位线一侧的情况下，使用PMOS晶体管，并且在隧道磁阻元件的固定层位于 使用NMOS晶体管的位线执行源极接地操作中的反并联写入。 通过执行反并行写入方向的读取操作来提高读取和写入操作余量。

    Magnetic memory and method for writing to magnetic memory
    9.
    发明申请
    Magnetic memory and method for writing to magnetic memory 失效
    磁存储器和写入磁存储器的方法

    公开(公告)号：US20090168501A1

    公开(公告)日：2009-07-02

    申请号：US12314577

    申请日：2008-12-12

    申请人： Kenchi Ito

    发明人： Kenchi Ito

    IPC分类号： G11C11/14 ,  G11C11/00 ,  G11C11/416

    CPC分类号： G11C11/1675 ,  G11C11/161 ,  G11C11/1659

    摘要： Provided is a magnetic random access memory employing spin torque magnetization reversal having a small write current value is applied. The memory includes: a switching element the conduction of which is controlled by a gate electrode, and three magnetoresistance effect elements connected to the switching element in series. Each magnetoresistance effect element may be a TMR element or a GMR element that includes a multilayered film composed of a fixed layer, a non-magnetic layer and a free layer. The central element serves as a storage element. The magnetoresistance effect elements are manufactured such that an absolute value of current necessary for changing a magnetization direction of at least one of the magnetoresistance effect elements located at both ends is larger than an absolute value of current necessary for changing a magnetization direction of the central magnetoresistance effect element.

    摘要翻译： 提供了采用具有小的写入电流值的自旋转矩磁化反转的磁性随机存取存储器。 存储器包括：其导通由栅电极控制的开关元件，以及串联连接到开关元件的三个磁阻效应元件。 每个磁阻效应元件可以是包括由固定层，非磁性层和自由层构成的多层膜的TMR元件或GMR元件。 中心元件用作存储元件。 制造磁阻效应元件使得位于两端的至少一个磁阻效应元件的磁化方向的变化所需的电流绝对值大于改变中心磁阻的磁化方向所需的电流的绝对值 效果元素。