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1.发明申请MANUFACTURING METHOD FOR METAL OXIDE SEMICONDUCTOR MATERIAL FOR GAS SENSOR 有权用于气体传感器的金属氧化物半导体材料的制造方法公开(公告)号：US20120112137A1
公开(公告)日：2012-05-10
申请号：US13060886
申请日：2009-08-28
IPC分类号： H01B1/02
CPC分类号： C01G55/00 , C01G15/00 , C01P2004/03 , C01P2006/40 , C01P2006/80
摘要： Provided is a manufacturing method of a metal oxide semiconductor material for gas sensors by which an oxide precursor and noble metal colloid particles will not readily cohere in the manufacturing process. The manufacturing process implements a precursor solution synthesis step 1 of synthesizing an oxide precursor solution in which an oxide precursor is dispersed, a pH adjustment step 3 of adjusting the pH of the oxide precursor solution, a precursor-colloid dispersion preparation step 5 of preparing an oxide precursor-noble metal colloid dispersion in which the oxide precursor and the noble metal colloid are dispersed substantially uniformly, a purifying step 7 of purifying the oxide precursor-noble metal colloid dispersion to obtain a purified oxide precursor noble metal colloid dispersion, and a freeze-drying step 11 of freeze-drying an precipitate of the purified oxide precursor-noble metal colloid dispersion.
摘要翻译： 提供了一种用于气体传感器的金属氧化物半导体材料的制造方法，在制造过程中氧化物前体和贵金属胶体颗粒将不容易凝固。 制造方法实现了前体溶液合成步骤1，其合成其中分散有氧化物前体的氧化物前体溶液，调节氧化物前体溶液的pH的pH调节步骤3，前体 - 胶体分散体制备步骤5， 氧化物前体和贵金属胶体基本上均匀分散的氧化物前体 - 贵金属胶体分散体，纯化氧化物前体 - 贵金属胶体分散体以获得纯化的氧化物前体贵金属胶体分散体的纯化步骤7和冷冻 干燥步骤11，将纯化的氧化物前体 - 贵金属胶体分散体的沉淀物冷冻干燥。
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2.发明授权Manufacturing method of metal oxide semiconductor material for gas sensor 有权用于气体传感器的金属氧化物半导体材料的制造方法公开(公告)号：US08529799B2
公开(公告)日：2013-09-10
申请号：US13060886
申请日：2009-08-28
CPC分类号： C01G55/00 , C01G15/00 , C01P2004/03 , C01P2006/40 , C01P2006/80
摘要： Provided is a manufacturing method of a metal oxide semiconductor material for gas sensors by which an oxide precursor and noble metal colloid particles will not readily cohere in the manufacturing process. The manufacturing process implements a precursor solution synthesis step 1 of synthesizing an oxide precursor solution in which an oxide precursor is dispersed, a pH adjustment step 3 of adjusting the pH of the oxide precursor solution, a precursor-colloid dispersion preparation step 5 of preparing an oxide precursor-noble metal colloid dispersion in which the oxide precursor and the noble metal colloid are dispersed substantially uniformly, a purifying step 7 of purifying the oxide precursor-noble metal colloid dispersion to obtain a purified oxide precursor noble metal colloid dispersion, and a freeze-drying step 11 of freeze-drying an precipitate of the purified oxide precursor-noble metal colloid dispersion.
摘要翻译： 提供了一种用于气体传感器的金属氧化物半导体材料的制造方法，在制造过程中氧化物前体和贵金属胶体颗粒将不容易凝固。 制造方法实现了前体溶液合成步骤1，其合成其中分散有氧化物前体的氧化物前体溶液，调节氧化物前体溶液的pH的pH调节步骤3，前体 - 胶体分散体制备步骤5， 氧化物前体和贵金属胶体基本上均匀分散的氧化物前体 - 贵金属胶体分散体，纯化氧化物前体 - 贵金属胶体分散体以获得纯化的氧化物前体贵金属胶体分散体的纯化步骤7和冷冻 干燥步骤11，将纯化的氧化物前体 - 贵金属胶体分散体的沉淀物冷冻干燥。
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3.发明授权Lead frame for semiconductor devices, a semiconductor device made using the lead frame 有权用于半导体器件的引线框架，使用引线框架制造的半导体器件公开(公告)号：US06563199B2
公开(公告)日：2003-05-13
申请号：US09813262
申请日：2001-03-20
IPC分类号： H01L23495
CPC分类号： H01L21/568 , H01L21/561 , H01L23/3114 , H01L23/49548 , H01L24/48 , H01L24/97 , H01L2224/05599 , H01L2224/48247 , H01L2224/85001 , H01L2224/85399 , H01L2224/97 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01023 , H01L2924/01033 , H01L2924/01074 , H01L2924/01082 , H01L2924/181 , H01L2924/1815 , H01L2224/85 , H01L2224/45015 , H01L2924/207 , H01L2224/45099 , H01L2924/00012
摘要： A semiconductor device having a unit lead frame defining a support with a peripheral edge and a first lead spaced from the peripheral edge. The first lead has a recess formed therein. A semiconductor chip is provided on the support. A conductive element electrically connects between the semiconductor chip and the first lead. The resin layer on the semiconductor chip and the first lead extends into the recess. The invention is also directed to a unit lead frame that is part of the semiconductor device, a lead frame incorporating a plurality of unit lead frames, and a method of manufacturing semiconductor devices.
摘要翻译： 一种具有单元引线框架的半导体器件，该单元引线框架限定具有外围边缘的支撑件以及与周边边缘间隔开的第一引线 第一引线具有形成在其中的凹部。 半导体芯片设置在支撑体上。 导电元件电连接在半导体芯片和第一引线之间。 半导体芯片上的树脂层和第一引线延伸到凹槽中。 本发明还涉及作为半导体器件的一部分的单元引线框架，包括多个单元引线框架的引线框架以及半导体器件的制造方法。
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4.发明授权Lead frame for a semiconductor device, a semiconductor device made from the lead frame, and a method of making a semiconductor device 有权用于半导体器件的引线框架，由引线框架制成的半导体器件，以及制造半导体器件的方法公开(公告)号：US06700186B2
公开(公告)日：2004-03-02
申请号：US10024827
申请日：2001-12-17
申请人： Shoshi Yasunaga , Hideshi Hanada , Takahiro Ishibashi , Jun Sugimoto , Yuichi Dohki , Hitoshi Etoh
发明人： Shoshi Yasunaga , Hideshi Hanada , Takahiro Ishibashi , Jun Sugimoto , Yuichi Dohki , Hitoshi Etoh
IPC分类号： H01L23495
CPC分类号： H01L23/49541 , H01L21/565 , H01L23/3107 , H01L23/49548 , H01L24/48 , H01L24/97 , H01L2224/05599 , H01L2224/45099 , H01L2224/48091 , H01L2224/48247 , H01L2224/85399 , H01L2224/97 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01047 , H01L2924/01074 , H01L2924/01082 , H01L2924/181 , H01L2224/85 , H01L2224/45015 , H01L2924/207 , H01L2924/00012
摘要： A lead frame for a semiconductor device. The semiconductor device has a sheet with oppositely facing sides and a thickness between the oppositely facing sides. The sheet has first and second unit lead frames. Each unit lead frame has a support for a semiconductor chip and at least one lead space from the support. The sheet has a tie bar network which connects a) the support to the at least one lead on each of the first and second lead frames and b) the first and second lead frames, each to the other. The sheet has a dividing line along which the sheet can be cut to separate the first and second lead frames from each other. The tie bar network consists of at least one tie bar extending along a substantial length of the dividing line. The support has a first thickness between the oppositely facing sides of the sheet. The at least one tie bar has a second thickness between the oppositely facing sides of the sheet over a substantial length of the dividing line that is less than the first thickness.
摘要翻译： 一种用于半导体器件的引线框架。 半导体器件具有相对面对的片材和相对面对侧之间的厚度。 片材具有第一和第二单元引线框架。 每个单元引线框架具有对于半导体芯片的支持和至少一个来自支撑件的引导空间。 该片材具有连接杆网络，其将支撑件连接到第一和第二引线框架中的每一个上的至少一个引线，以及b）第一引线框架和第二引线框架。 片材具有分割线，沿着该分割线可以切割片材以使第一和第二引线框架彼此分离。 连杆网络由至少一个沿着分割线的相当长度延伸的连杆构成。 支撑件在片材的相对面侧之间具有第一厚度。 所述至少一个连接杆在所述分隔线的相当长度上小于所述第一厚度的所述片材的相对面对之间具有第二厚度。
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公开(公告)号：USD516528S1
公开(公告)日：2006-03-07
申请号：US29229566
申请日：2005-05-10
申请人： Yuji Nakamura , Katsumi Suzuki , Takahiro Ishibashi , Eiji Kobori
设计人： Yuji Nakamura , Katsumi Suzuki , Takahiro Ishibashi , Eiji Kobori
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公开(公告)号：USD507545S1
公开(公告)日：2005-07-19
申请号：US29211532
申请日：2004-08-18
申请人： Yuji Nakamura , Katsumi Suzuki , Takahiro Ishibashi , Eiji Kobori
设计人： Yuji Nakamura , Katsumi Suzuki , Takahiro Ishibashi , Eiji Kobori
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公开(公告)号：US06821131B2
公开(公告)日：2004-11-23
申请号：US10692750
申请日：2003-10-27
IPC分类号： H01R1200
CPC分类号： H01R13/2421 , G01R1/0483
摘要： An IC socket for the fine pitch IC package includes a socket body having an opening for guiding the IC package, an insulation base having a plurality of through-holes corresponding to the external terminals of the IC package, the contact pins placed in the through-holes, and a cover member for applying a predetermined pressure to bring the external terminals of the IC package and the contact pins into contact with one another. Each of the contact pins is formed with a first plunger including a terminal portion to be in contact with the external terminal of the IC package, a wider portion whose width is larger than the width of the terminal portion and the shaft whose width is equal to or smaller than the terminal portion, the coil spring, and the second plunger having a U-shape section, to be connected with the contact terminal of external circuit.
摘要翻译： 用于细间距IC封装的IC插座包括具有用于引导IC封装的开口的插座主体，具有与IC封装的外部端子相对应的多个通孔的绝缘基座， 孔，以及用于施加预定压力以使IC封装的外部端子和触针彼此接触的盖构件。 每个接触销形成有第一柱塞，该第一柱塞包括与IC封装的外部端子接触的端子部分，宽度大于端子部分的宽度的宽部分和宽度等于 或小于端子部分，螺旋弹簧和具有U形部分的第二柱塞，以与外部电路的接触端子连接。
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公开(公告)号：US20120233853A1
公开(公告)日：2012-09-20
申请号：US13513123
申请日：2010-10-08
IPC分类号： B23P19/00
CPC分类号： H05K7/1069 , Y10T29/53174
摘要： In a contact block comprising a contact holder having multiple through-holes arranged in a position adjustment direction, two positioning pins are inserted via the through-holes to two through-holes selected from multiple through-holes formed in a contact block accommodation portion in the position adjustment direction, and thereby the relative positions of contact portions of contact terminals held by the contact holder can be adjusted with respect to terminals of a semiconductor device.
摘要翻译： 在包括具有位置调整方向上的多个通孔的接触保持器的接触块中，通过通孔将两个定位销插入到形成在接触块容纳部中的多个通孔中的两个通孔中 位置调整方向，由此可以相对于半导体器件的端子来调节由触点支架保持的接触端子的接触部分的相对位置。
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公开(公告)号：USD516046S1
公开(公告)日：2006-02-28
申请号：US29229567
申请日：2005-05-10
申请人： Yuji Nakamura , Katsumi Suzuki , Takahiro Ishibashi , Eiji Kobori
设计人： Yuji Nakamura , Katsumi Suzuki , Takahiro Ishibashi , Eiji Kobori
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公开(公告)号：US08727792B2
公开(公告)日：2014-05-20
申请号：US13513123
申请日：2010-10-08
IPC分类号： H01R12/00
CPC分类号： H05K7/1069 , Y10T29/53174
摘要： In a contact block comprising a contact holder having multiple through-holes arranged in a position adjustment direction, two positioning pins are inserted via the through-holes to two through-holes selected from multiple through-holes formed in a contact block accommodation portion in the position adjustment direction, and thereby the relative positions of contact portions of contact terminals held by the contact holder can be adjusted with respect to terminals of a semiconductor device.
摘要翻译： 在包括具有位置调整方向上的多个通孔的接触保持器的接触块中，通过通孔将两个定位销插入到形成在接触块容纳部中的多个通孔中的两个通孔中 位置调整方向，由此可以相对于半导体器件的端子来调节由触点支架保持的接触端子的接触部分的相对位置。
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