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11 条记录 (耗时 0.02 秒)

    IC socket for a fine pitch IC package
    4.
    发明授权
    IC socket for a fine pitch IC package 有权
    IC插座用于精细间距IC封装

    公开(公告)号：US06821131B2

    公开(公告)日：2004-11-23

    申请号：US10692750

    申请日：2003-10-27

    申请人： Katsumi Suzuki ,  Takahiro Ishibashi ,  Yuji Nakamura ,  Shuuji Kunioka

    发明人： Katsumi Suzuki ,  Takahiro Ishibashi ,  Yuji Nakamura ,  Shuuji Kunioka

    IPC分类号： H01R1200

    CPC分类号： H01R13/2421 ,  G01R1/0483

    摘要： An IC socket for the fine pitch IC package includes a socket body having an opening for guiding the IC package, an insulation base having a plurality of through-holes corresponding to the external terminals of the IC package, the contact pins placed in the through-holes, and a cover member for applying a predetermined pressure to bring the external terminals of the IC package and the contact pins into contact with one another. Each of the contact pins is formed with a first plunger including a terminal portion to be in contact with the external terminal of the IC package, a wider portion whose width is larger than the width of the terminal portion and the shaft whose width is equal to or smaller than the terminal portion, the coil spring, and the second plunger having a U-shape section, to be connected with the contact terminal of external circuit.

    摘要翻译： 用于细间距IC封装的IC插座包括具有用于引导IC封装的开口的插座主体，具有与IC封装的外部端子相对应的多个通孔的绝缘基座， 孔，以及用于施加预定压力以使IC封装的外部端子和触针彼此接触的盖构件。 每个接触销形成有第一柱塞，该第一柱塞包括与IC封装的外部端子接触的端子部分，宽度大于端子部分的宽度的宽部分和宽度等于 或小于端子部分，螺旋弹簧和具有U形部分的第二柱塞，以与外部电路的接触端子连接。

    MANUFACTURING METHOD FOR METAL OXIDE SEMICONDUCTOR MATERIAL FOR GAS SENSOR
    6.
    发明申请
    MANUFACTURING METHOD FOR METAL OXIDE SEMICONDUCTOR MATERIAL FOR GAS SENSOR 有权
    用于气体传感器的金属氧化物半导体材料的制造方法

    公开(公告)号：US20120112137A1

    公开(公告)日：2012-05-10

    申请号：US13060886

    申请日：2009-08-28

    申请人： Tetsuji Imamura ,  Daisuke Kuwahara ,  Takayuki Nakano ,  Takahiro Ishibashi

    发明人： Tetsuji Imamura ,  Daisuke Kuwahara ,  Takayuki Nakano ,  Takahiro Ishibashi

    IPC分类号： H01B1/02

    CPC分类号： C01G55/00 ,  C01G15/00 ,  C01P2004/03 ,  C01P2006/40 ,  C01P2006/80

    摘要： Provided is a manufacturing method of a metal oxide semiconductor material for gas sensors by which an oxide precursor and noble metal colloid particles will not readily cohere in the manufacturing process. The manufacturing process implements a precursor solution synthesis step 1 of synthesizing an oxide precursor solution in which an oxide precursor is dispersed, a pH adjustment step 3 of adjusting the pH of the oxide precursor solution, a precursor-colloid dispersion preparation step 5 of preparing an oxide precursor-noble metal colloid dispersion in which the oxide precursor and the noble metal colloid are dispersed substantially uniformly, a purifying step 7 of purifying the oxide precursor-noble metal colloid dispersion to obtain a purified oxide precursor noble metal colloid dispersion, and a freeze-drying step 11 of freeze-drying an precipitate of the purified oxide precursor-noble metal colloid dispersion.

    摘要翻译： 提供了一种用于气体传感器的金属氧化物半导体材料的制造方法，在制造过程中氧化物前体和贵金属胶体颗粒将不容易凝固。 制造方法实现了前体溶液合成步骤1，其合成其中分散有氧化物前体的氧化物前体溶液，调节氧化物前体溶液的pH的pH调节步骤3，前体 - 胶体分散体制备步骤5， 氧化物前体和贵金属胶体基本上均匀分散的氧化物前体 - 贵金属胶体分散体，纯化氧化物前体 - 贵金属胶体分散体以获得纯化的氧化物前体贵金属胶体分散体的纯化步骤7和冷冻 干燥步骤11，将纯化的氧化物前体 - 贵金属胶体分散体的沉淀物冷冻干燥。

    SOCKET FOR SEMICONDUCTOR DEVICE PROVIDED WITH CONTACT BLOCK
    8.
    发明申请
    SOCKET FOR SEMICONDUCTOR DEVICE PROVIDED WITH CONTACT BLOCK 有权
    具有接触块的半导体器件插座

    公开(公告)号：US20120233853A1

    公开(公告)日：2012-09-20

    申请号：US13513123

    申请日：2010-10-08

    申请人： Takahiro Ishibashi ,  Katunori Takahashi ,  Noriyuki Matsuoka

    发明人： Takahiro Ishibashi ,  Katunori Takahashi ,  Noriyuki Matsuoka

    IPC分类号： B23P19/00

    CPC分类号： H05K7/1069 ,  Y10T29/53174

    摘要： In a contact block comprising a contact holder having multiple through-holes arranged in a position adjustment direction, two positioning pins are inserted via the through-holes to two through-holes selected from multiple through-holes formed in a contact block accommodation portion in the position adjustment direction, and thereby the relative positions of contact portions of contact terminals held by the contact holder can be adjusted with respect to terminals of a semiconductor device.

    摘要翻译： 在包括具有位置调整方向上的多个通孔的接触保持器的接触块中，通过通孔将两个定位销插入到形成在接触块容纳部中的多个通孔中的两个通孔中 位置调整方向，由此可以相对于半导体器件的端子来调节由触点支架保持的接触端子的接触部分的相对位置。

    Semiconductior device socket including contact block
    9.
    发明授权
    Semiconductior device socket including contact block 有权
    半导体器件插座，包括接触块

    公开(公告)号：US08727792B2

    公开(公告)日：2014-05-20

    申请号：US13513123

    申请日：2010-10-08

    申请人： Takahiro Ishibashi ,  Katunori Takahashi ,  Noriyuki Matsuoka

    发明人： Takahiro Ishibashi ,  Katunori Takahashi ,  Noriyuki Matsuoka

    IPC分类号： H01R12/00

    CPC分类号： H05K7/1069 ,  Y10T29/53174

    摘要： In a contact block comprising a contact holder having multiple through-holes arranged in a position adjustment direction, two positioning pins are inserted via the through-holes to two through-holes selected from multiple through-holes formed in a contact block accommodation portion in the position adjustment direction, and thereby the relative positions of contact portions of contact terminals held by the contact holder can be adjusted with respect to terminals of a semiconductor device.

    摘要翻译： 在包括具有位置调整方向上的多个通孔的接触保持器的接触块中，通过通孔将两个定位销插入到形成在接触块容纳部中的多个通孔中的两个通孔中 位置调整方向，由此可以相对于半导体器件的端子来调节由触点支架保持的接触端子的接触部分的相对位置。

    Manufacturing method of metal oxide semiconductor material for gas sensor
    10.
    发明授权
    Manufacturing method of metal oxide semiconductor material for gas sensor 有权
    用于气体传感器的金属氧化物半导体材料的制造方法

    公开(公告)号：US08529799B2

    公开(公告)日：2013-09-10

    申请号：US13060886

    申请日：2009-08-28

    申请人： Tetsuji Imamura ,  Daisuke Kuwahara ,  Takayuki Nakano ,  Takahiro Ishibashi

    发明人： Tetsuji Imamura ,  Daisuke Kuwahara ,  Takayuki Nakano ,  Takahiro Ishibashi

    IPC分类号： H01B1/02 ,  H01B1/22

    CPC分类号： C01G55/00 ,  C01G15/00 ,  C01P2004/03 ,  C01P2006/40 ,  C01P2006/80

    摘要： Provided is a manufacturing method of a metal oxide semiconductor material for gas sensors by which an oxide precursor and noble metal colloid particles will not readily cohere in the manufacturing process. The manufacturing process implements a precursor solution synthesis step 1 of synthesizing an oxide precursor solution in which an oxide precursor is dispersed, a pH adjustment step 3 of adjusting the pH of the oxide precursor solution, a precursor-colloid dispersion preparation step 5 of preparing an oxide precursor-noble metal colloid dispersion in which the oxide precursor and the noble metal colloid are dispersed substantially uniformly, a purifying step 7 of purifying the oxide precursor-noble metal colloid dispersion to obtain a purified oxide precursor noble metal colloid dispersion, and a freeze-drying step 11 of freeze-drying an precipitate of the purified oxide precursor-noble metal colloid dispersion.

    摘要翻译： 提供了一种用于气体传感器的金属氧化物半导体材料的制造方法，在制造过程中氧化物前体和贵金属胶体颗粒将不容易凝固。 制造方法实现了前体溶液合成步骤1，其合成其中分散有氧化物前体的氧化物前体溶液，调节氧化物前体溶液的pH的pH调节步骤3，前体 - 胶体分散体制备步骤5， 氧化物前体和贵金属胶体基本上均匀分散的氧化物前体 - 贵金属胶体分散体，纯化氧化物前体 - 贵金属胶体分散体以获得纯化的氧化物前体贵金属胶体分散体的纯化步骤7和冷冻 干燥步骤11，将纯化的氧化物前体 - 贵金属胶体分散体的沉淀物冷冻干燥。