公开(公告)号：US20060289805A1

公开(公告)日：2006-12-28

申请号：US11430044

申请日：2006-05-09

申请人： Tetsuro Nakasugi ,  Noriaki Sasaki ,  Takeshi Koshiba ,  Takumi Ota

发明人： Tetsuro Nakasugi ,  Noriaki Sasaki ,  Takeshi Koshiba ,  Takumi Ota

IPC分类号： G21G5/00

CPC分类号： H01J37/3026 ,  H01J2237/31761

摘要： According to an aspect of the invention, there is provided an electron beam lithography apparatus including a first setting unit configured to set a drawing position on a semiconductor substrate based on layout information of the semiconductor substrate, a second setting unit configured to set a valid range on the semiconductor substrate based on shape information of the semiconductor substrate, a determination unit configured to determine whether or not the drawing position falls within the valid range, and an irradiation unit configured to irradiate the semiconductor substrate with an electron beam when the determination unit determines that the drawing position falls within the valid range.

公开(公告)号：US07889910B2

公开(公告)日：2011-02-15

申请号：US11797531

申请日：2007-05-04

申请人： Tetsuro Nakasugi ,  Takumi Ota ,  Takeshi Koshiba ,  Noriaki Sasaki

发明人： Tetsuro Nakasugi ,  Takumi Ota ,  Takeshi Koshiba ,  Noriaki Sasaki

IPC分类号： G06K9/00

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00

摘要： A character pattern extracting method includes ranking character patterns whose number is larger than a maximum number of character patterns in an aperture, depending on the number of reference times in design data of a semiconductor device, extracting first extraction patterns whose number is smaller than the maximum number from the large number of read character patterns in a descending order of the reference time number, defining character patterns except the first extraction patterns out of the larger number of character patterns as candidate patterns, selecting from the candidate patterns a plurality of candidate patterns whose number corresponds to a difference between the number of extracted patterns from the maximum number, and creating combinations of the selected candidate patterns, and extracting second extraction patterns included in a combination among the combinations of candidate patterns, in which a manufacturing time of the semiconductor device is most shortened.

摘要翻译： 字符图案提取方法包括根据半导体器件的设计数据中的参考时间的数量来排列数量大于孔径中的最大字符图案数量的字符图案，提取数量小于最大值的第一提取图案 以大量的读取字符图案的数量以参考时间数字的降序排列，将除了较大数量的字符图案之外的第一提取模式除外的字符图案作为候选图案，从候选图案中选择多个候选图案， 数字对应于从最大数量提取的图案的数量之间的差异，以及创建所选择的候选图案的组合，以及提取包括在候选图案的组合中的组合中的第二提取图案，其中半导体器件的制造时间 最缩短。

公开(公告)号：US07482604B2

公开(公告)日：2009-01-27

申请号：US11430044

申请日：2006-05-09

申请人： Tetsuro Nakasugi ,  Noriaki Sasaki ,  Takeshi Koshiba ,  Takumi Ota

发明人： Tetsuro Nakasugi ,  Noriaki Sasaki ,  Takeshi Koshiba ,  Takumi Ota

IPC分类号： G21G5/00

CPC分类号： H01J37/3026 ,  H01J2237/31761

摘要： According to an aspect of the invention, there is provided an electron beam lithography apparatus including a first setting unit configured to set a drawing position on a semiconductor substrate based on layout information of the semiconductor substrate, a second setting unit configured to set a valid range on the semiconductor substrate based on shape information of the semiconductor substrate, a determination unit configured to determine whether or not the drawing position falls within the valid range, and an irradiation unit configured to irradiate the semiconductor substrate with an electron beam when the determination unit determines that the drawing position falls within the valid range.

摘要翻译： 根据本发明的一个方面，提供了一种电子束光刻设备，包括：第一设定单元，被配置为基于半导体衬底的布局信息来设置半导体衬底上的绘制位置;第二设置单元，被配置为设置有效范围 基于所述半导体衬底的形状信息在所述半导体衬底上，确定单元，被配置为确定所述绘制位置是否在所述有效范围内;以及照射单元，被配置为当所述确定单元确定时照射所述半导体衬底电子束 绘图位置在有效范围内。

公开(公告)号：US20070263921A1

公开(公告)日：2007-11-15

申请号：US11797531

申请日：2007-05-04

申请人： Tetsuro Nakasugi ,  Takumi Ota ,  Takeshi Koshiba ,  Noriaki Sasaki

发明人： Tetsuro Nakasugi ,  Takumi Ota ,  Takeshi Koshiba ,  Noriaki Sasaki

IPC分类号： G06K9/00

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00

摘要： A character pattern extracting method includes ranking character patterns whose number is larger than a maximum number of character patterns in an aperture, depending on the number of reference times in design data of a semiconductor device, extracting first extraction patterns whose number is smaller than the maximum number from the large number of read character patterns in a descending order of the reference time number, defining character patterns except the first extraction patterns out of the larger number of character patterns as candidate patterns, selecting from the candidate patterns a plurality of candidate patterns whose number corresponds to a difference between the number of extracted patterns from the maximum number, and creating combinations of the selected candidate patterns, and extracting second extraction patterns included in a combination among the combinations of candidate patterns, in which a manufacturing time of the semiconductor device is most shortened.

摘要翻译： 字符图案提取方法包括根据半导体器件的设计数据中的参考时间的数量来排列数量大于孔径中的最大字符图案数量的字符图案，提取数量小于最大值的第一提取图案 以大量的读取字符图案的数量以参考时间数字的降序排列，将除了较大数量的字符图案之外的第一提取模式除外的字符图案作为候选图案，从候选图案中选择多个候选图案， 数字对应于从最大数量提取的图案的数量之间的差异，以及创建所选择的候选图案的组合，以及提取包括在候选图案的组合中的组合中的第二提取图案，其中半导体器件的制造时间 最缩短。

公开(公告)号：US07985958B2

公开(公告)日：2011-07-26

申请号：US11268603

申请日：2005-11-08

申请人： Tetsuro Nakasugi ,  Kazuo Tawarayama ,  Hiroyuki Mizuno ,  Takumi Ota ,  Noriaki Sasaki ,  Tatsuhiko Higashiki ,  Takeshi Koshiba ,  Shunko Magoshi

发明人： Tetsuro Nakasugi ,  Kazuo Tawarayama ,  Hiroyuki Mizuno ,  Takumi Ota ,  Noriaki Sasaki ,  Tatsuhiko Higashiki ,  Takeshi Koshiba ,  Shunko Magoshi

IPC分类号： H01J37/153

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/304 ,  H01J2237/15 ,  H01J2237/30433

摘要： According to an aspect of the invention, there is provided an electron beam drawing apparatus comprising at least one stage of a deflection amplifier and a deflection unit, a first storage section which stores shot information at a drawing time, a second storage section which stores a correction table indicating a relation between the shot information and an output voltage of the deflection amplifier, and an adjusting section which adjusts an output of the deflection amplifier based on the correction table stored in the second storage section and the shot information stored in the first storage section.

摘要翻译： 根据本发明的一个方面，提供了一种电子束描绘装置，其包括偏转放大器和偏转单元的至少一个级，在绘制时存储镜头信息的第一存储部分， 指示拍摄信息和偏转放大器的输出电压之间的关系的校正表以及基于存储在第二存储部中的校正表来调整偏转放大器的输出的调节部和存储在第一存储部 部分。

公开(公告)号：US20060151721A1

公开(公告)日：2006-07-13

申请号：US11268603

申请日：2005-11-08

申请人： Tetsuro Nakasugi ,  Kazuo Tawarayama ,  Hiroyuki Mizuno ,  Takumi Ota ,  Noriaki Sasaki ,  Tatsuhiko Higashiki ,  Takeshi Koshiba ,  Shunko Magoshi

发明人： Tetsuro Nakasugi ,  Kazuo Tawarayama ,  Hiroyuki Mizuno ,  Takumi Ota ,  Noriaki Sasaki ,  Tatsuhiko Higashiki ,  Takeshi Koshiba ,  Shunko Magoshi

IPC分类号： G21K5/10

CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/304 ,  H01J2237/15 ,  H01J2237/30433

摘要： According to an aspect of the invention, there is provided an electron beam drawing apparatus comprising at least one stage of a deflection amplifier and a deflection unit, a first storage section which stores shot information at a drawing time, a second storage section which stores a correction table indicating a relation between the shot information and an output voltage of the deflection amplifier, and an adjusting section which adjusts an output of the deflection amplifier based on the correction table stored in the second storage section and the shot information stored in the first storage section.

摘要翻译： 根据本发明的一个方面，提供了一种电子束描绘装置，其包括偏转放大器和偏转单元的至少一个级，在绘制时存储镜头信息的第一存储部分， 指示拍摄信息和偏转放大器的输出电压之间的关系的校正表以及基于存储在第二存储部中的校正表来调整偏转放大器的输出的调节部和存储在第一存储部 部分。

公开(公告)号：US07459705B2

公开(公告)日：2008-12-02

申请号：US11583114

申请日：2006-10-19

申请人： Tetsuro Nakasugi ,  Ryoichi Inanami ,  Takumi Ota ,  Takeshi Koshiba

发明人： Tetsuro Nakasugi ,  Ryoichi Inanami ,  Takumi Ota ,  Takeshi Koshiba

IPC分类号： G03F9/00 ,  G21K5/10 ,  H01J37/20

CPC分类号： G03F1/20 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3174

摘要： A charged particle beam exposure method is disclosed, which includes preparing an aperture mask having character apertures, correcting dimensions of designed patterns in design data in consideration of at least one of factors such as a forward scattering distance of a charged particle, a rearward scattering distance of the charged particle, a blurring of a beam of the charged particle, a dimension conversion difference of the designed patterns due to a denseness/coarseness difference of the designed patterns caused when the underlayer is processed while using the resist as a mask, and the like, allocating at least a part of a specified character aperture of the plurality of character apertures of the aperture mask to the corrected designed patterns to produce writing data, and exposing the resist to the beams of the charged particle passed through the at least a part of the specified character aperture based on the writing data.

摘要翻译： 公开了一种带电粒子束曝光方法，其包括制备具有字符孔的孔径掩模，考虑至少一个因素，校正设计数据中设计图案的尺寸，例如带电粒子的前向散射距离，向后散射距离 带电粒子的模糊，带电粒子束的模糊，由于当使用抗蚀剂作为掩模时在底层被处理时引起的设计图案的致密度/粗糙度差造成的设计图案的尺寸转换差，以及 类似地，将孔径掩模的多个字符孔径的指定字符孔径的至少一部分分配给经校正的设计图案以产生写入数据，并将抗蚀剂暴露于穿过至少一部分的带电粒子的束 基于写入数据的指定字符孔径。

公开(公告)号：US20070114463A1

公开(公告)日：2007-05-24

申请号：US11583114

申请日：2006-10-19

申请人： Tetsuro Nakasugi ,  Ryoichi Inanami ,  Takumi Ota ,  Takeshi Koshiba

发明人： Tetsuro Nakasugi ,  Ryoichi Inanami ,  Takumi Ota ,  Takeshi Koshiba

IPC分类号： G21K5/10

CPC分类号： G03F1/20 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3174

摘要： A charged particle beam exposure method is disclosed, which includes preparing an aperture mask having character apertures, correcting dimensions of designed patterns in design data in consideration of at least one of factors such as a forward scattering distance of a charged particle, a rearward scattering distance of the charged particle, a blurring of a beam of the charged particle, a dimension conversion difference of the designed patterns due to a denseness/coarseness difference of the designed patterns caused when the underlayer is processed while using the resist as a mask, and the like, allocating at least a part of a specified character aperture of the plurality of character apertures of the aperture mask to the corrected designed patterns to produce writing data, and exposing the resist to the beams of the charged particle passed through the at least a part of the specified character aperture based on the writing data.

摘要翻译： 公开了一种带电粒子束曝光方法，其包括制备具有字符孔的孔径掩模，考虑至少一个因素，校正设计数据中设计图案的尺寸，例如带电粒子的前向散射距离，向后散射距离 带电粒子的模糊，带电粒子束的模糊，由于当使用抗蚀剂作为掩模时在底层被处理时引起的设计图案的致密度/粗糙度差造成的设计图案的尺寸转换差，以及 类似地，将孔径掩模的多个字符孔径的指定字符孔径的至少一部分分配给经校正的设计图案以产生写入数据，并将抗蚀剂暴露于穿过至少一部分的带电粒子的束 基于写入数据的指定字符孔径。

公开(公告)号：US07202488B2

公开(公告)日：2007-04-10

申请号：US10948555

申请日：2004-09-24

申请人： Takumi Ota ,  Tetsuro Nakasugi

发明人： Takumi Ota ,  Tetsuro Nakasugi

IPC分类号： H01J37/302 ,  H01J37/30 ,  G03C5/00

CPC分类号： H01J37/304 ,  H01J37/153 ,  H01J2237/31754

摘要： A method of correcting deflection distortion includes dividing a deflection area to which a charged-particle beam is deflected into equal initial blocks as an initial setting, calculating an initial aberration amount for each of the initial blocks generated when the charged-particle beam is deflected, dividing the deflection area into main blocks in accordance with a change rate of the initial aberration amount; calculating a main aberration amount for each of the main blocks generated when the charged-particle beam is deflected, and calculating a correction value correcting a deflection distortion based on the main aberration amount.

摘要翻译： 校正偏转失真的方法包括将带电粒子束被偏转的偏转区域划分为相等的初始块作为初始设置，计算当带电粒子束偏转时产生的每个初始块的初始像差量， 根据初始像差量的变化率将偏转区域分成主块; 计算当带电粒子束偏转时产生的每个主要块的主像差量，并且计算校正基于主像差量的偏转失真的校正值。

公开(公告)号：US20060017013A1

公开(公告)日：2006-01-26

申请号：US11172996

申请日：2005-07-05

申请人： Takumi Ota ,  Tetsuro Nakasugi

发明人： Takumi Ota ,  Tetsuro Nakasugi

IPC分类号： G21G5/00 ,  A61N5/00

CPC分类号： H01J37/3045 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3174

摘要： A charged particle beam drawing equipment includes charged particle beam source, first and second shaping aperture masks with first and second opening portions for rotation adjustment, detection section to detect charged particle beam intensity distribution in a plane parallel to the second mask, the beam being emitted from the source and passing through the opening portions, rotation angle control section to control relative rotation angle between the masks, acquisition section to acquire relative rotation angle between the masks such that deviation in relative rotation angle between the masks falls within a predetermined range based on detection results obtained by changing the relative rotation angle between the masks plural times by the control section and by detecting the beam by the detection section for each rotation angle, and instruction section to instruct the rotation angle control section such that the relative rotation angle between the masks be the acquired rotation angle.

摘要翻译： 带电粒子束拉制设备包括带电粒子束源，具有用于旋转调节的第一和第二开口部分的第一和第二成形孔径掩模，用于检测平行于第二掩模的平面中的带电粒子束强度分布的检测部分， 从源极通过开口部分，旋转角度控制部分，以控制掩模之间的相对旋转角度，获取部分，以获得掩模之间的相对旋转角度，使得掩模之间的相对旋转角度的偏差落在预定范围内，基于 通过控制部分多次改变掩模之间的相对旋转角度并且通过每个旋转角度由检测部分检测光束而获得的检测结果，以及指令部分，其指示旋转角度控制部分，使得旋转角度控制部分之间的相对旋转角度 掩模是获得的旋转角度 。