公开(公告)号：US20240418501A1

公开(公告)日：2024-12-19

申请号：US18501672

申请日：2023-11-03

Applicant: Tokyo Electron Limited

Inventor： Ivan MALEEV ,  Yan CHEN ,  Holger TUITJE ,  Basanta BHADURI ,  Ching Ling MENG ,  Da SONG ,  Xinkang TIAN

IPC: G01B11/06

Abstract: A method of film thickness measurement includes illuminating a top layer of a sample in a first region with a broadband illumination beam. The sample includes a substrate and a plurality of semiconductor structures formed between the substrate and the top layer. A first reflectivity spectrum of the sample is obtained in the first region. A first thickness of the top layer in the first region is determined by applying a top-layer model to the first reflectivity spectrum. The top-layer model is substantially unaffected by the plurality of semiconductor structures.

公开(公告)号：US20250138429A1

公开(公告)日：2025-05-01

申请号：US18498698

申请日：2023-10-31

Applicant: Tokyo Electron Limited

Inventor： Qi WANG ,  Steven GRZESKOWIAK ,  Nicholas SMIESZEK ,  Blaze MESSER ,  Sergey VORONIN ,  Akiteru KO ,  Eric Chih-Fang LIU ,  Ashawaraya SHALINI ,  Da SONG

IPC: G03F7/36 ,  G03F7/004 ,  H01L21/66

Abstract: A method of endpoint detection includes performing a surface treatment on a wafer without plasma in a process chamber which includes an outlet configured to output an exhaust gas of the surface treatment. An exhaust plasma is generated from the exhaust gas in a plasma coupler. The exhaust plasma is analyzed to determine an endpoint of the surface treatment. A system includes a process chamber configured to receive a wafer and perform a surface treatment on the wafer without plasma. The process chamber includes an outlet configured to output an exhaust gas of the surface treatment. A plasma coupler is configured to receive the exhaust gas and generate an exhaust plasma therefrom. A detector is configured to receive and analyze the exhaust plasma.

公开(公告)号：US20250112065A1

公开(公告)日：2025-04-03

申请号：US18478946

申请日：2023-09-29

Applicant: Tokyo Electron Limited

Inventor： Ivan MALEEV ,  Basanta BHADURI ,  Holger TUITJE ,  Mihail MIHAYLOV ,  Xinkang TIAN ,  Da SONG

IPC: H01L21/67 ,  G01N21/84 ,  H01L21/66

Abstract: A system includes a vacuum chamber having a wafer chuck therein and side windows slanted relative to the wafer chuck. A wafer stage is positioned below the wafer chuck and configured to rotate the wafer chuck and move the wafer chuck vertically. Illumination optics, including an illumination corrector lens, are configured to receive light and direct the light through an illumination vacuum window of the side windows to an optical spot on the wafer. Collection optics, including a collection corrector lens, are configured to receive the light from the optical spot through a collection vacuum window of the side windows and direct the light to a detector. A transfer module is configured to move the illumination optics and the collection optics parallel to the illumination vacuum window and the collection vacuum window respectively. The illumination corrector lens and the collection corrector lens are configured to reduce chromatic aberration.