公开(公告)号：US20220230848A1

公开(公告)日：2022-07-21

申请号：US17576012

申请日：2022-01-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Taro IKEDA ,  Eiki KAMATA ,  Yoshiyuki KONDO

IPC: H01J37/32

Abstract: Embodiments of this application discloses a plasma processing method performed in a plasma processing apparatus having a plurality of plasma sources, the plasma processing method comprising: controlling each of the plasma sources so that at least one plasma source of the plurality of plasma sources is in a first state referring an OFF-state or a power state of a first level and the remaining plasma sources are in a second state referring an ON-state or a power state of a second level higher than the power state of the first level; and generating plasma from a processing gas with power output from the plurality of plasma sources, and processing a substrate, wherein said controlling of each of the plasma sources includes repeatedly controlling so that the plasma source of the first state among the plurality of plasma sources is sequentially transitioned.

公开(公告)号：US20230220545A1

公开(公告)日：2023-07-13

申请号：US17916159

申请日：2021-03-29

Applicant: Tokyo Electron Limited

Inventor： Yoshiyuki KONDO ,  Yutaka FUJINO ,  Hiroyuki IKUTA ,  Hideki YUASA

IPC: C23C16/44 ,  H01L21/3065 ,  H01J37/32

CPC classification number: C23C16/4405 ,  H01L21/3065 ,  H01J37/32862 ,  H01J37/3244

Abstract: The cleaning method according to an embodiment of the present invention is for cleaning a plasma processing apparatus that performs a plasma processing on a substrate. This cleaning method includes: forming a protective film; and cleaning. The forming the protective film involves forming the protective film in a plasma generation region by generating plasma while supplying a film-forming gas into a processing container in which a processing space including the plasma generation region and a diffusion region is formed. The cleaning involves cleaning an interior of the processing container in which the protective film has been formed by generating plasma while supplying a cleaning gas into the processing container.

公开(公告)号：US20220235462A1

公开(公告)日：2022-07-28

申请号：US17577656

申请日：2022-01-18

Applicant: Tokyo Electron Limited

Inventor： Hirokazu UEDA ,  Hideki YUASA ,  Yutaka FUJINO ,  Yoshiyuki KONDO ,  Hiroyuki IKUTA

IPC: C23C16/455 ,  H01L21/02 ,  H01J37/32 ,  C23C16/34 ,  C23C16/36 ,  C23C16/511

Abstract: A film forming method includes: placing a substrate on which a pattern, which includes a plurality of convex and concave portions, is formed on a stage disposed inside a chamber; and selectively forming a silicon-containing film on the plurality of convex portions of the pattern by applying a bias power to the stage and introducing microwaves into the chamber while supplying a processing gas containing a silicon-containing gas and a nitrogen-containing gas into the chamber to generate plasma, wherein the selectively forming the silicon-containing film includes a first film formation of forming a silicon-containing film around upper sides of the plurality of convex portions and a second film formation of forming a silicon-containing film on upper portions of the plurality of convex portions.

公开(公告)号：US20220037124A1

公开(公告)日：2022-02-03

申请号：US17388613

申请日：2021-07-29

Applicant: TOKYO ELECTRON LIMITED

Inventor： Satoshi ITOH ,  Hiroyuki IKUTA ,  Yoshiyuki KONDO ,  Hideki YUASA ,  Soudai EMORI

IPC: H01J37/32 ,  H01L21/02 ,  C23C16/511 ,  C23C16/509

Abstract: A plasma processing apparatus for generating plasma from a processing gas using microwaves and performing plasma processing on a substrate is provided. The apparatus includes a processing chamber having a substrate support on which the substrate is placed; a plurality of microwave radiation units arranged at a central portion and an outer peripheral portion of a ceiling wall of the processing chamber and configured to radiate microwaves; and a controller configured to complete microwave radiation from the microwave radiation unit in the central portion upon completion of plasma processing of the substrate and then complete microwave radiation from the microwave radiation units in the outer peripheral portion.