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公开(公告)号:US06275436B1
公开(公告)日:2001-08-14
申请号:US09577371
申请日:2000-05-23
申请人: Tsunehiro Tobita , Jun Kitahara , Takashi Tsunehiro , Kunihiro Katayama , Ryuichi Hattori , Yukihiro Seki , Hajime Yamagami , Takashi Totsuka , Takeshi Wada , Yosio Takaya , Manabu Saito , Kenichi Kaki , Takao Okubo , Takashi Kikuchi , Masamichi Kishi , Takeshi Suzuki , Shigeru Kadowaki
发明人: Tsunehiro Tobita , Jun Kitahara , Takashi Tsunehiro , Kunihiro Katayama , Ryuichi Hattori , Yukihiro Seki , Hajime Yamagami , Takashi Totsuka , Takeshi Wada , Yosio Takaya , Manabu Saito , Kenichi Kaki , Takao Okubo , Takashi Kikuchi , Masamichi Kishi , Takeshi Suzuki , Shigeru Kadowaki
IPC分类号: G11C800
CPC分类号: G11C29/765 , G06F3/0601 , G06F3/0613 , G06F3/0616 , G06F3/064 , G06F3/0644 , G06F3/0656 , G06F3/0679 , G06F3/068 , G06F11/1433 , G06F11/1441 , G06F12/08 , G06F12/0802 , G06F12/0866 , G06F2003/0694 , G06F2212/2022 , G06F2212/312 , G11C29/789 , G11C29/82
摘要: A control method and system when a flash memory is used. as a semiconductor disk or a main memory in an information processing system. A semiconductor file system comprises a first nonvolatile memory electrically erasable, a second nonvolatile memory not electrically erasable, a volatile memory, a controller which controls the memories, and a control section which controls the controller wherein a physical address corresponding to a logical address specified from an external system is accessed. The first nonvolatile memory stores data for the external system to perform operations, first management information indicating the correspondence between physical addresses at which the data is stored and logical addresses, and second management information indicating a state of the first nonvolatile memory. The second nonvolatile memory previously stores interface information required for inputting and outputting the data from and to the external system and read-only data of the data. The controller comprises control means for determining a physical sector address forming predetermined high-order bits of the physical address when data is output from the first nonvolatile memory or when data is input to the volatile memory, means for storing the determined physical sector address, and means for consecutively generating addresses in a sector determined by the physical sector address. The control section is responsive to the interface information, the first management information, and the second management information for controlling input/output of data from/to the external system and for temporarily storing write data into the first nonvolatile memory from the external system in the volatile memory and then transferring the write data from the volatile memory to the first nonvolatile memory. The consecutive address generation means and the sector address storage means output the physical sector address and the consecutively generated addresses to the first nonvolatile memory and the volatile memory when data at the physical sector address is output from the first nonvolatile memory or when data at the physical sector address is input to the volatile memory.
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2.
公开(公告)号:US5530673A
公开(公告)日:1996-06-25
申请号:US225313
申请日:1994-04-08
申请人: Tsunehiro Tobita , Jun Kitahara , Takashi Tsunehiro , Kunihiro Katayama , Ryuichi Hattori , Yukihiro Seki , Hajime Yamagami , Takashi Totsuka , Takeshi Wada , Yosio Takaya , Manabu Saito , Kenichi Kaki , Takao Okubo , Takashi Kikuchi , Masamichi Kishi , Takeshi Suzuki , Shigeru Kadowaki
发明人: Tsunehiro Tobita , Jun Kitahara , Takashi Tsunehiro , Kunihiro Katayama , Ryuichi Hattori , Yukihiro Seki , Hajime Yamagami , Takashi Totsuka , Takeshi Wada , Yosio Takaya , Manabu Saito , Kenichi Kaki , Takao Okubo , Takashi Kikuchi , Masamichi Kishi , Takeshi Suzuki , Shigeru Kadowaki
CPC分类号: G11C29/765 , G06F11/1433 , G06F11/1441 , G06F12/08 , G06F12/0802 , G06F12/0866 , G06F3/0601 , G06F3/0613 , G06F3/0616 , G06F3/064 , G06F3/0644 , G06F3/0656 , G06F3/0679 , G06F3/068 , G11C29/789 , G11C29/82 , G06F2003/0694 , G06F2212/2022 , G06F2212/312
摘要: A control method and system when a flash memory is used as a semiconductor disk or a main memory in an information processing system. A semiconductor file system comprises a first nonvolatile memory electrically erasable, a second nonvolatile memory not electrically erasable, a volatile memory, a controller which controls the memories, and a control section which controls the controller wherein a physical address corresponding to a logical address specified from an external system is accessed. The first nonvolatile memory stores data for the external system to perform operations, first management information indicating the correspondence between physical addresses at which the data is stored and logical addresses, and second management information indicating a state of the first nonvolatile memory. The second nonvolatile memory previously stores interface information required for inputting and outputting the data from and to the external system and read-only data of the data. The controller comprises control means for determining a physical sector address forming predetermined high-order bits of the physical address when data is output from the first nonvolatile memory or when data is input to the volatile memory, means for storing the determined physical sector address, and means for consecutively generating addresses in a sector determined by the physical sector address.
摘要翻译: 当闪存用作信息处理系统中的半导体盘或主存储器时的控制方法和系统。 半导体文件系统包括电可擦除的第一非易失性存储器,不电可擦除的第二非易失性存储器,易失性存储器,控制存储器的控制器和控制控制器的控制部分,其中对应于由 访问一个外部系统。 第一非易失性存储器存储用于执行操作的外部系统的数据,指示存储数据的物理地址与逻辑地址之间的对应关系的第一管理信息,以及指示第一非易失性存储器的状态的第二管理信息。 第二非易失性存储器预先存储从外部系统输入和输出数据所需的接口信息以及数据的只读数据。 控制器包括控制装置,用于当数据从第一非易失性存储器输出时或当数据被输入到易失性存储器时,确定形成物理地址的预定高位的物理扇区地址,存储确定的物理扇区地址的装置,以及 用于连续地产生由物理扇区地址确定的扇区中的地址的装置。
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公开(公告)号:US5973964A
公开(公告)日:1999-10-26
申请号:US182630
申请日:1998-10-30
申请人: Tsunehiro Tobita , Jun Kitahara , Takashi Tsunehiro , Kunihiro Katayama , Ryuichi Hattori , Yukihiro Seki , Hajime Yamagami , Takashi Totsuka , Takeshi Wada , Yosio Takaya , Manabu Saito , Kenichi Kaki , Takao Okubo , Takashi Kikuchi , Masamichi Kishi , Takeshi Suzuki , Shigeru Kadowaki
发明人: Tsunehiro Tobita , Jun Kitahara , Takashi Tsunehiro , Kunihiro Katayama , Ryuichi Hattori , Yukihiro Seki , Hajime Yamagami , Takashi Totsuka , Takeshi Wada , Yosio Takaya , Manabu Saito , Kenichi Kaki , Takao Okubo , Takashi Kikuchi , Masamichi Kishi , Takeshi Suzuki , Shigeru Kadowaki
CPC分类号: G11C29/765 , G06F11/1433 , G06F11/1441 , G06F12/08 , G06F12/0802 , G06F12/0866 , G06F3/0601 , G06F3/0613 , G06F3/0616 , G06F3/064 , G06F3/0644 , G06F3/0656 , G06F3/0679 , G06F3/068 , G11C29/789 , G11C29/82 , G06F2003/0694 , G06F2212/2022 , G06F2212/312
摘要: A control method and system when a flash memory is used as a semiconductor disk or a main memory in an information processing system. A semiconductor file system comprises a first nonvolatile memory electrically erasable, a second nonvolatile memory not electrically erasable, a volatile memory, a controller which controls the memories, and a control section which controls the controller wherein a physical address corresponding to a logical address specified from an external system is accessed. The first nonvolatile memory stores data for the external system to perform operations, first management information indicating the correspondence between physical addresses at which the data is stored and logical addresses, and second management information indicating a state of the first nonvolatile memory. The second nonvolatile memory previously stores interface information required for inputting and outputting the data from and to the external system and read-only data of the data. The controller has a control means for determining a physical sector address forming predetermined high-order bits of the physical address when data is output from the first nonvolatile memory or when data is input to the volatile memory, means for storing the determined physical sector address, and means for consecutively generating addresses in a sector determined by the physical sector address.
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公开(公告)号:US5862083A
公开(公告)日:1999-01-19
申请号:US640998
申请日:1996-04-30
申请人: Tsunehiro Tobita , Jun Kitahara , Takashi Tsunehiro , Kunihiro Katayama , Ryuichi Hattori , Yukihiro Seki , Hajime Yamagami , Takashi Totsuka , Takeshi Wada , Yosio Takaya , Manabu Saito , Kenichi Kaki , Takao Okubo , Takashi Kikuchi , Masamichi Kishi , Takeshi Suzuki , Shigeru Kadowaki
发明人: Tsunehiro Tobita , Jun Kitahara , Takashi Tsunehiro , Kunihiro Katayama , Ryuichi Hattori , Yukihiro Seki , Hajime Yamagami , Takashi Totsuka , Takeshi Wada , Yosio Takaya , Manabu Saito , Kenichi Kaki , Takao Okubo , Takashi Kikuchi , Masamichi Kishi , Takeshi Suzuki , Shigeru Kadowaki
CPC分类号: G11C29/765 , G06F11/1433 , G06F11/1441 , G06F12/08 , G06F12/0802 , G06F12/0866 , G06F3/0601 , G06F3/0613 , G06F3/0616 , G06F3/064 , G06F3/0644 , G06F3/0656 , G06F3/0679 , G06F3/068 , G11C29/789 , G11C29/82 , G06F2003/0694 , G06F2212/2022 , G06F2212/312
摘要: A control method and system when a flash memory is used as a semiconductor disk or a main memory in an information processing system. A semiconductor file system comprises a first nonvolatile memory electrically erasable, a second nonvolatile memory not electrically erasable, a volatile memory, a controller which controls the memories, and a control section which controls the controller wherein a physical address corresponding to a logical address specified from an external system is accessed. The first nonvolatile memory stores data for the external system to perform operations, first management information indicating the correspondence between physical addresses at which the data is stored and logical addresses, and second management information indicating a state of the first nonvolatile memory. The second nonvolatile memory previously stores interface information required for inputting and outputting the data from and to the external system and read-only data of the data. The controller comprises control means for determining a physical sector address forming predetermined high-order bits of the physical address when data is output from the first nonvolatile memory or when data is input to the volatile memory, means for storing the determined physical sector address, and means for consecutively generating addresses in a sector determined by the physical sector address.
摘要翻译: 当闪存用作信息处理系统中的半导体盘或主存储器时的控制方法和系统。 半导体文件系统包括电可擦除的第一非易失性存储器,不电可擦除的第二非易失性存储器,易失性存储器,控制存储器的控制器和控制控制器的控制部分,其中对应于由 访问一个外部系统。 第一非易失性存储器存储用于执行操作的外部系统的数据,指示存储数据的物理地址与逻辑地址之间的对应关系的第一管理信息,以及指示第一非易失性存储器的状态的第二管理信息。 第二非易失性存储器预先存储从外部系统输入和输出数据所需的接口信息以及数据的只读数据。 控制器包括控制装置,用于当数据从第一非易失性存储器输出时或当数据被输入到易失性存储器时,确定形成物理地址的预定高位的物理扇区地址,存储确定的物理扇区地址的装置,以及 用于连续地产生由物理扇区地址确定的扇区中的地址的装置。
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5.
公开(公告)号:US06421279B1
公开(公告)日:2002-07-16
申请号:US09927493
申请日:2001-08-13
申请人: Tsunehiro Tobita , Jun Kitahara , Takashi Tsunehiro , Kunihiro Katayama , Ryuichi Hattori , Yukihiro Seki , Hajime Yamagami , Takashi Totsuka , Takeshi Wada , Yosio Takaya , Manabu Saito , Kenichi Kaki , Takao Okubo , Takashi Kikuchi , Masamichi Kishi , Takeshi Suzuki , Shigeru Kadowaki
发明人: Tsunehiro Tobita , Jun Kitahara , Takashi Tsunehiro , Kunihiro Katayama , Ryuichi Hattori , Yukihiro Seki , Hajime Yamagami , Takashi Totsuka , Takeshi Wada , Yosio Takaya , Manabu Saito , Kenichi Kaki , Takao Okubo , Takashi Kikuchi , Masamichi Kishi , Takeshi Suzuki , Shigeru Kadowaki
IPC分类号: G11C800
CPC分类号: G11C29/765 , G06F3/0601 , G06F3/0613 , G06F3/0616 , G06F3/064 , G06F3/0644 , G06F3/0656 , G06F3/0679 , G06F3/068 , G06F11/1433 , G06F11/1441 , G06F12/08 , G06F12/0802 , G06F12/0866 , G06F2003/0694 , G06F2212/2022 , G06F2212/312 , G11C29/789 , G11C29/82
摘要: A semiconductor file system features a first nonvolatile memory electrically erasable, a second nonvolatile memory not electrically erasable, a volatile memory, a controller, and a control section which controls the controller wherein a physical address corresponding to a logical address specified from an external system is accessed. The first nonvolatile memory stores data for the external system to perform operations, first management information indicating correspondence between physical and logical addresses, and second management information indicating a state of the first nonvolatile memory. The second nonvolatile memory previously stores interface information. The controller determines a physical sector address. The control section is for controlling input/output of data from/to the external system and for temporarily storing write data into the first nonvolatile memory from the external system in the volatile memory and then transferring the write data from the volatile memory to the first nonvolatile memory.
摘要翻译: 半导体文件系统具有电可擦除的第一非易失性存储器,不电可擦除的第二非易失性存储器,易失性存储器,控制器和控制部分,其控制控制器,其中对应于从外部系统指定的逻辑地址的物理地址是 访问。 第一非易失性存储器存储用于执行操作的外部系统的数据,指示物理和逻辑地址之间的对应关系的第一管理信息以及指示第一非易失性存储器的状态的第二管理信息。 第二非易失性存储器先前存储接口信息。 控制器确定物理扇区地址。 控制部分用于控制来自/外部系统的数据的输入/输出,并用于从易失性存储器中的外部系统暂时将写数据存储到第一非易失性存储器中,然后将写入数据从易失性存储器传送到第一非易失性存储器 记忆。
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6.
公开(公告)号:US6078520A
公开(公告)日:2000-06-20
申请号:US357931
申请日:1999-07-21
申请人: Tsunehiro Tobita , Jun Kitahara , Takashi Tsunehiro , Kunihiro Katayama , Ryuichi Hattori , Yukihiro Seki , Hajime Yamagami , Takashi Totsuka , Takeshi Wada , Yosio Takaya , Manabu Saito , Kenichi Kaki , Takao Okubo , Takashi Kikuchi , Masamichi Kishi , Takeshi Suzuki , Shigeru Kadowaki
发明人: Tsunehiro Tobita , Jun Kitahara , Takashi Tsunehiro , Kunihiro Katayama , Ryuichi Hattori , Yukihiro Seki , Hajime Yamagami , Takashi Totsuka , Takeshi Wada , Yosio Takaya , Manabu Saito , Kenichi Kaki , Takao Okubo , Takashi Kikuchi , Masamichi Kishi , Takeshi Suzuki , Shigeru Kadowaki
CPC分类号: G11C29/765 , G06F11/1433 , G06F12/08 , G06F12/0802 , G06F12/0866 , G11C29/789 , G11C29/82 , G06F2212/2022 , G06F2212/312
摘要: A control method and system when a flash memory is used as a semiconductor disk or a main memory in an information processing system. A semiconductor file system comprises a first nonvolatile memory electrically erasable, a second nonvolatile memory not electrically erasable, a volatile memory, a controller which controls the memories, and a control section which controls the controller wherein a physical address corresponding to a logical address specified from an external system is accessed. The first nonvolatile memory stores data for the external system to perform operations, first management information indicating the correspondence between physical addresses at which the data is stored and logical addresses, and second management information indicating a state of the first nonvolatile memory. The second nonvolatile memory previously stores interface information required for inputting and outputting the data from and to the external system and read-only data of the data. The controller has a control means for determining a physical sector address forming predetermined high-order bits of the physical address when data is output from the first nonvolatile memory or when data is input to the volatile memory, means for storing the determined physical sector address, and means for consecutively generating addresses in a sector determined by the physical sector address.
摘要翻译: 当闪存用作信息处理系统中的半导体盘或主存储器时的控制方法和系统。 半导体文件系统包括电可擦除的第一非易失性存储器,不电可擦除的第二非易失性存储器,易失性存储器,控制存储器的控制器和控制控制器的控制部分,其中对应于由 访问一个外部系统。 第一非易失性存储器存储用于执行操作的外部系统的数据,指示存储数据的物理地址与逻辑地址之间的对应关系的第一管理信息,以及指示第一非易失性存储器的状态的第二管理信息。 第二非易失性存储器预先存储从外部系统输入和输出数据所需的接口信息以及数据的只读数据。 控制器具有控制装置,用于当数据从第一非易失性存储器输出时或当数据被输入到易失性存储器时,确定形成物理地址的预定高位的物理扇区地址,用于存储确定的物理扇区地址的装置, 以及用于在由所述物理扇区地址确定的扇区中连续生成地址的装置。
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公开(公告)号:US07184320B2
公开(公告)日:2007-02-27
申请号:US11167187
申请日:2005-06-28
申请人: Hajime Yamagami , Kouichi Terada , Yoshihiro Hayashi , Takashi Tsunehiro , Kunihiro Katayama , Kenichi Kaki , Takeshi Furuno
发明人: Hajime Yamagami , Kouichi Terada , Yoshihiro Hayashi , Takashi Tsunehiro , Kunihiro Katayama , Kenichi Kaki , Takeshi Furuno
IPC分类号: G11C11/34
CPC分类号: G11C29/765 , G06F3/0601 , G06F3/0616 , G06F3/0619 , G06F3/064 , G06F3/0659 , G06F3/0679 , G06F12/0246 , G06F2003/0694 , G06F2212/2022 , G11C16/102 , G11C16/349
摘要: A semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium, the semiconductor disk including a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in which error information of the data memory are stored, and a memory controller which reads data out of, writes data into and erases data from the data memory, the substitutive memory and the error memory. Since the write errors of the flash memory can be remedied, the service life of the semiconductor disk can be increased.
摘要翻译: 采用其中以块为单位重写数据的闪存的半导体盘作为存储介质,该半导体盘包括存储有文件数据的数据存储器,代替数据存储器中的错误块的替换存储器, 存储有数据存储器的错误信息的错误存储器,以及从数据存储器,替代存储器和错误存储器读取数据并将数据写入数据存储器,替代存储器和错误存储器的数据的存储器控制器。 由于可以补救闪速存储器的写入错误,所以可以提高半导体盘的使用寿命。
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公开(公告)号:US07002851B2
公开(公告)日:2006-02-21
申请号:US11085508
申请日:2005-03-22
申请人: Hajime Yamagami , Kouichi Terada , Yoshihiro Hayashi , Takashi Tsunehiro , Kunihiro Katayama , Kenichi Kaki , Takeshi Furuno
发明人: Hajime Yamagami , Kouichi Terada , Yoshihiro Hayashi , Takashi Tsunehiro , Kunihiro Katayama , Kenichi Kaki , Takeshi Furuno
IPC分类号: G11C7/00
CPC分类号: G11C29/765 , G06F3/0601 , G06F3/0616 , G06F3/0619 , G06F3/064 , G06F3/0659 , G06F3/0679 , G06F12/0246 , G06F2003/0694 , G06F2212/2022 , G11C16/102 , G11C16/349
摘要: A semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium, the semiconductor disk including a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in which error information of the data memory are stored, and a memory controller which reads data out of, writes data into and erases data from the data memory, the substitutive memory and the error memory. Since the write errors of the flash memory can be remedied, the service life of the semiconductor disk can be increased.
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公开(公告)号:US20050289389A1
公开(公告)日:2005-12-29
申请号:US11167187
申请日:2005-06-28
申请人: Hajime Yamagami , Kouichi Terada , Yoshihiro Hayashi , Takashi Tsunehiro , Kunihiro Katayama , Kenichi Kaki , Takeshi Furuno
发明人: Hajime Yamagami , Kouichi Terada , Yoshihiro Hayashi , Takashi Tsunehiro , Kunihiro Katayama , Kenichi Kaki , Takeshi Furuno
CPC分类号: G11C29/765 , G06F3/0601 , G06F3/0616 , G06F3/0619 , G06F3/064 , G06F3/0659 , G06F3/0679 , G06F12/0246 , G06F2003/0694 , G06F2212/2022 , G11C16/102 , G11C16/349
摘要: A semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium, the semiconductor disk including a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in which error information of the data memory are stored, and a memory controller which reads data out of, writes data into and erases data from the data memory, the substitutive memory and the error memory. Since the write errors of the flash memory can be remedied, the service life of the semiconductor disk can be increased.
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公开(公告)号:US06341085B1
公开(公告)日:2002-01-22
申请号:US09660648
申请日:2000-09-12
申请人: Hajime Yamagami , Kouichi Terada , Yoshihiro Hayashi , Takashi Tsunehiro , Kunihiro Katayama , Kenichi Kaki , Takeshi Furuno
发明人: Hajime Yamagami , Kouichi Terada , Yoshihiro Hayashi , Takashi Tsunehiro , Kunihiro Katayama , Kenichi Kaki , Takeshi Furuno
IPC分类号: G11C700
CPC分类号: G11C29/765 , G06F3/0601 , G06F3/0616 , G06F3/0659 , G06F3/0664 , G06F3/0679 , G06F2003/0694 , G06F2212/2022 , G11C16/102
摘要: In a semiconductor disk wherein a flash memory into which data is rewritten in block unit is employed as a storage medium; a semiconductor disk comprising a data memory in which file data are stored, a substitutive memory which substitutes for blocks of errors in the data memory, an error memory in which error information of the data memory are stored, and a memory controller which reads data out of, writes data into and erases data from the data memory, the substitutive memory and the error memory. Since the write errors of the flash memory can be remedied, the service life of the semiconductor disk can be prolonged.
摘要翻译: 在其中以块为单位重写数据的闪存的半导体盘被用作存储介质; 包括存储文件数据的数据存储器的半导体盘,代替数据存储器中的错误块的替代存储器,存储有数据存储器的错误信息的错误存储器以及读出数据的存储器控制器 将数据写入数据存储器,替代存储器和错误存储器中并将其擦除。 由于可以补救闪速存储器的写入错误,所以可以延长半导体盘的使用寿命。
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