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公开(公告)号:US5045281A
公开(公告)日:1991-09-03
申请号:US486259
申请日:1990-02-27
申请人: Tsutomu Okutomi , Mikio Okawa , Atsushi Yamamoto , Tsuneyo Seki , Yoshinari Satoh , Mitsutaka Honma , Seishi Chiba , Tadaaki Sekiguchi
发明人: Tsutomu Okutomi , Mikio Okawa , Atsushi Yamamoto , Tsuneyo Seki , Yoshinari Satoh , Mitsutaka Honma , Seishi Chiba , Tadaaki Sekiguchi
IPC分类号: C22C5/08 , C22C1/04 , C22C14/00 , C22C16/00 , C22C27/02 , C22C27/04 , C22C27/06 , C22C29/08 , C22C29/14 , H01H1/02 , H01H1/0233 , H01H33/66
CPC分类号: H01H1/0203 , H01H1/0233
摘要: A contact forming material for a vacuum interrupter comprising: from 25% to 65% by weight of a highly conductive component comprising Ag and Cu, and from 35% to 75% by weight of an arc-proof component selected from the group consisting of Ti, V, Cr, Zr, Mo, W and their carbides and borides, and mixtures thereof wherein the highly conductive component of the contact forming material comprises (i) a first highly conductive component region composed of a first discontinuous phase having a thickness or width of no more than 5 micrometers and a first matrix surrounding the first discontinuous phase, and (ii) a second highly conductive component region composed of a second discontinuous phase having a thickness or width of at least 5 micrometers and a second matrix surrounding the second discontinuous phase, wherein the first discontinuous phase in the first highly conductive component region is finely and uniformly dispersed in the first matrix at intervals of no more than 5 micrometers, and wherein the amount of the second highly conductive component region based on the total highly conductive component is within the range of from 10% to 60% by weight.
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公开(公告)号:US5420384A
公开(公告)日:1995-05-30
申请号:US214016
申请日:1994-03-15
IPC分类号: H01H33/66 , H01H1/02 , H01H1/0233 , H01H33/00
CPC分类号: H01H1/0203 , H01H1/0233 , H01H33/664
摘要: A contact material for a vacuum interrupter includes: (a) from 25 to 70% by volume of a highly conductive component selected from the group consisting of Ag, Cu and combinations thereof, and (b) from 30 to 75% by volume of an arc-proof component comprising a carbide of an element selected from the group consisting of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W and combinations thereof, wherein the average grain size of the said arc-proof component is from 0.3 to 3 micrometers and the average grain distance of the arc-proof component is within the range of 0.1 to 1 micrometer. Contacts for a vacuum interrupter obtained from the contact material have improved wear resistance, large current interruption characteristic, wear resistance, and chopping characteristic, and low temperature rise characteristic.
摘要翻译: 用于真空断路器的接触材料包括:(a)25至70体积%的选自Ag,Cu及其组合的高导电组分,和(b)30至75体积%的 所述防弧成分包括选自Ti,Zr,Hf,V,Nb,Ta,Cr,Mo,W的元素的碳化物及其组合,其中所述防弧成分的平均粒径为 0.3〜3微米,防弧成分的平均晶粒距离在0.1〜1微米的范围内。 从接触材料获得的真空断路器触点具有改善的耐磨性,大电流中断特性,耐磨性和斩波特性,以及低温特性。
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公开(公告)号:US5149362A
公开(公告)日:1992-09-22
申请号:US386264
申请日:1989-07-28
申请人: Tsutomu Okutomi , Atsushi Yamamoto , Seishi Chiba , Tsuneyo Seki , Mikio Okawa , Mitsutaka Honma , Kiyofumi Otobe , Yoshinari Satoh , Tadaaki Sekiguchi
发明人: Tsutomu Okutomi , Atsushi Yamamoto , Seishi Chiba , Tsuneyo Seki , Mikio Okawa , Mitsutaka Honma , Kiyofumi Otobe , Yoshinari Satoh , Tadaaki Sekiguchi
IPC分类号: H01H33/66 , H01H1/02 , H01H1/0233
CPC分类号: H01H1/0203 , H01H1/0233 , Y10T428/12049
摘要: An Ag-Cu-WC contact forming material for a vacuum interrupter comprising a highly conductive component comprising Ag and Cu and an arc-proof component comprising WC wherein the content of the highly conductive component is such that the total amount of Ag and Cu(Ag+Cu) is from 25% to 65% by weight and the percentage of Ag based on the total amount of Ag and Cu[Ag/(Ag+Cu)] is from 40% to 80% by weight; wherein the content of the arc-proof component is from 35% to 75% by weight; wherein the structure of the highly conductive component comprises a matrix and a discontinuous phase, the discontinuous phase having a thickness or width of no more than 5 micrometers and wherein said arc-proof component comprises a discontinuous grain having a grain size of no more than 1 micrometer.
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公开(公告)号:US5354352A
公开(公告)日:1994-10-11
申请号:US868114
申请日:1992-04-14
申请人: Tsuneyo Seki , Tsutomu Okutomi , Atsushi Yamamoto , Mikio Okawa , Kiyofumi Otobe
发明人: Tsuneyo Seki , Tsutomu Okutomi , Atsushi Yamamoto , Mikio Okawa , Kiyofumi Otobe
CPC分类号: C22C1/04 , C22C9/00 , H01H1/0206 , Y10T428/12028
摘要: Disclosed is a contact material for vacuum circuit breakers and a manufacturing process thereof. The contact material includes a copper component, a chromium component and a bismuth component, and has a metallographic structure comprising: a first phase including the copper component and the bismuth component; and a second phase including the chromium component and interposed among the first phase. In this structure, the boundary surface between the first phase and the second phase appears in a structural cross section of the alloy composition as a substantially smooth boundary line, such that when a segment of the boundary line is defined by two arbitrary points which lie on the boundary line at a straight distance of 10 .mu.m, the ratio of the length of the segment to the straight distance of 10 .mu.m lies within a range of approximately 1.0 to 1.4. Moreover, the boundary line may be approximate to a circle such that the ratio of the length of the boundary line to the length of the circumference of an ideal circle having the same area as the area defined by the boundary line lies within a range of approximately 1.0 to 1.3.In the above contact material, the chromium component is preferably included at a content of approximately 20 % to 60% by weight, and the ratio of the bismuth component to the sum of the bismuth component and the copper component preferably lies within a range of approximately 0.05% to 1.0% by weight.
摘要翻译: 公开了一种用于真空断路器的接触材料及其制造方法。 接触材料包括铜组分,铬组分和铋组分,并且具有金相组织,包括:包含铜组分和铋组分的第一相; 和包含铬成分的第二相插入第一相中。 在该结构中,第一相和第二相之间的边界面出现在合金组成的结构横截面中,作为基本平滑的边界线,使得当边界线的一段由位于 直线距离为10μm的边界线,段的长度与直线距离为10μm的比例在约1.0至1.4的范围内。 此外,边界线可以近似于圆,使得边界线的长度与具有与由边界线限定的面积相同的面积的理想圆的圆周的长度的比率在大约的范围内 1.0〜1.3。 在上述接触材料中,铬成分的含量优选为约20重量%〜60重量%,铋成分与铋成分与铜成分的和的比例优选在大约 0.05〜1.0重量%。
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公开(公告)号:US5403543A
公开(公告)日:1995-04-04
申请号:US893017
申请日:1992-06-03
申请人: Tsutomu Okutomi , Tsuneyo Seki , Atsushi Yamamoto , Mikio Okawa , Tadaaki Sekiguchi , Yoshiko Majima
发明人: Tsutomu Okutomi , Tsuneyo Seki , Atsushi Yamamoto , Mikio Okawa , Tadaaki Sekiguchi , Yoshiko Majima
CPC分类号: B22F1/0088 , C22C1/04 , H01H1/0206
摘要: Disclosed is a manufacturing process of an alloy material comprising a chromium component and a base component which comprises at least one element selected from tile group consisting of copper and silver, the manufacturing process comprising steps of: subjecting a chromium material with a carbon material to heat treatment; and manufacturing the alloy material using the chromium material treated at the heat treatment subjecting step and a raw material for tile base component. At the heat treatment subjecting step, the chromium material, mixed with 50 ppm to 5,000 ppm of the carbon material, is heated to a temperature within the range of 800.degree. C. to 1,400.degree. C. in a non-oxidizing atmosphere. According to this manufacturing process, the level of oxygen content in the alloy material are decreased to be not more than 200 ppm. The obtained alloy material can be used as a contact material for vacuum circuit breakers.
摘要翻译: 公开了包含铬成分和碱成分的合金材料的制造方法,其包含选自由铜和银组成的瓷砖组中的至少一种元素,所述制造方法包括以下步骤:使具有碳材料的铬材料加热 治疗; 并且使用在热处理步骤中处理的铬材料和用于瓦片基础成分的原料来制造合金材料。 在热处理工序中,在非氧化性气氛中将与50ppm〜5,000ppm的碳材料混合的铬材料加热至800〜1400℃的温度。 根据该制造方法,合金材料中的氧含量降低到不大于200ppm。 所获得的合金材料可以用作真空断路器的接触材料。
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公开(公告)号:US5056702A
公开(公告)日:1991-10-15
申请号:US419029
申请日:1989-10-10
申请人: Masako Nakahashi , Makoto Shirokane , Hiromitsu Takeda , Tatsuo Yamazaki , Tsutomu Okutomi , Shozi Niwa , Mikio Okawa , Mitsutaka Homma , Seiichi Suenaga , Shigeru Miyakawa
发明人: Masako Nakahashi , Makoto Shirokane , Hiromitsu Takeda , Tatsuo Yamazaki , Tsutomu Okutomi , Shozi Niwa , Mikio Okawa , Mitsutaka Homma , Seiichi Suenaga , Shigeru Miyakawa
IPC分类号: C04B37/02 , H01H33/662
CPC分类号: H01H33/66207 , C04B37/026 , C04B2235/6581 , C04B2237/125 , C04B2237/127 , C04B2237/343 , C04B2237/406 , C04B2237/407 , C04B2237/708 , C04B2237/765 , C04B2237/80 , C04B2237/84 , H01H2033/66215 , H01H2033/66276 , H01L2224/48463 , Y10T29/49146
摘要: A method of manufacturing a semiconductor device comprising a ceramics cylinder, a metal seal member closing an open end of the cylinder, a semiconductor element located within the cylinder and having electrodes, and leads or electrodes connected to the electrodes of the semiconductor element and extending from the cylinder. The method comprises the steps of coating powder of active metal consisting of Ti and/or Zr on the end face of the ceramics cylinder without heating the ceramics cylinder, in an amount of 0.1 mg/cm.sup.2 to 10 mg/cm.sup.2, mounting a layer of brazing filler metal on the end face of the ceramics cylinder, which have been coated with the powder of the active metal, placing the metal seal member on the layer of brazing filler metal, and heating the ceramics cylinder, the metal seal member, and the layer of brazing filler metal, thereby melting the layer of brazing filler metal and, thus, brazing the metal seal member to the open end of the ceramics cylinder.
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公开(公告)号:US4917642A
公开(公告)日:1990-04-17
申请号:US176752
申请日:1988-04-01
申请人: Masako Nakahashi , Makoto Shirokane , Hiromitsu Takeda , Tatsuo Yamazaki , Tsutomu Okutomi , Shozi Niwa , Mikio Okawa , Mitsutaka Homma
发明人: Masako Nakahashi , Makoto Shirokane , Hiromitsu Takeda , Tatsuo Yamazaki , Tsutomu Okutomi , Shozi Niwa , Mikio Okawa , Mitsutaka Homma
IPC分类号: C04B37/02 , H01H33/662
CPC分类号: H01H33/66207 , C04B37/026 , C04B2235/6581 , C04B2237/125 , C04B2237/127 , C04B2237/343 , C04B2237/406 , C04B2237/407 , C04B2237/708 , C04B2237/765 , C04B2237/80 , C04B2237/84 , H01H2033/66215 , H01H2033/66276 , H01L2224/48463 , Y10T29/49146
摘要: A method of manufacturing an air-tight ceramic container is disclosed. This method includes the steps of coating an active metal consisting of Ti and/or Zr on an opening end face of a ceramic tubular member in an amount of 0.1 to 10 mg/cm.sup.2, thereby forming an active metal layer, placing a brazing filler metal on the active metal layer, placing a metal cover member for shielding an opening portion of the ceramic tubular member so that a peripheral portion end face of the metal cover member is in contact with the brazing filler metal, and melting the brazing filler metal by heating, thereby brazing the metal cover member to the opening end face of the ceramic tubular member.
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公开(公告)号:US4830821A
公开(公告)日:1989-05-16
申请号:US224401
申请日:1988-07-26
申请人: Tsutomu Okutomi , Seishi Chiba , Mikio Okawa , Tadaaki Sekiguchi , Hiroshi Endo , Tsutomu Yamashita
发明人: Tsutomu Okutomi , Seishi Chiba , Mikio Okawa , Tadaaki Sekiguchi , Hiroshi Endo , Tsutomu Yamashita
CPC分类号: C22C1/0475 , H01H1/0206
摘要: A contact forming material for a vacuum valve or vacuum circuit breaker comprising (a) a conductive material consisting of copper and/or silver, and (b) an arc-proof material consisting of chromium, titanium, zirconium, or an alloy thereof wherein the amount of said arc-proof material present in said conductive material matrix is no more than 0.35% by weight. This contact forming material is produced by a process which comprises the steps of compacting arc-proof material powder into a green compact, sintering said green compact to obtain a skeleton of the arc-proof material, infiltrating the voids of said skeleton with a conductive material, and cooling the infiltrated material. The contact forming material can provide contacts for a vacuum valve or vacuum circuit breaker which has excellent characteristics such as temperature rise characteristic and contact resistance characteristic.
摘要翻译: 一种用于真空阀或真空断路器的接触形成材料,包括(a)由铜和/或银组成的导电材料,和(b)由铬,钛,锆或其合金组成的防弧材料,其中 存在于所述导电材料基体中的所述防弧材料的量不大于0.35重量%。 该接触形成材料通过以下步骤制造,该方法包括以下步骤:将抗电弧材料粉末压实成生坯,烧结所述生坯以获得防弧材料的骨架,用导电材料渗透所述骨架的空隙 ,并冷却渗透的材料。 接触形成材料可以提供具有诸如温度上升特性和接触电阻特性等优异特性的真空阀或真空断路器的触头。
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公开(公告)号:US4777335A
公开(公告)日:1988-10-11
申请号:US4904
申请日:1987-01-20
申请人: Tsutomu Okutomi , Seishi Chiba , Mikio Okawa , Tadaaki Sekiguchi , Hiroshi Endo , Tsutomu Yamashita
发明人: Tsutomu Okutomi , Seishi Chiba , Mikio Okawa , Tadaaki Sekiguchi , Hiroshi Endo , Tsutomu Yamashita
CPC分类号: C22C1/0475 , H01H1/0206
摘要: A contact forming material for a vacuum valve or vacuum circuit breaker comprising (a) a conductive material consisting of copper and/or silver, and (b) an arc-proof material consisting of chromium, titanium, zirconium, or an alloy thereof wherein the amount of said arc-proof material present in said conductive material matrix is no more than 0.35% by weight. This contact forming material is produced by a process which comprises the steps of compacting arc-proof material powder into a green compact, sintering said green compact to obtain a skeleton of the arc-proof material, infiltrating the voids of said skeleton with a conductive material, and cooling the infiltrated material. The contact forming material can provide contacts for a vacuum valve or vacuum circuit breaker which has excellent characteristics such as temperature rise characteristic and contact resistance characteristic.
摘要翻译: 一种用于真空阀或真空断路器的接触形成材料,包括(a)由铜和/或银组成的导电材料,和(b)由铬,钛,锆或其合金组成的防弧材料,其中 存在于所述导电材料基体中的所述防弧材料的量不大于0.35重量%。 该接触形成材料通过以下步骤制造,该方法包括以下步骤:将抗电弧材料粉末压实成生坯,烧结所述生坯以获得防弧材料的骨架,用导电材料渗透所述骨架的空隙 ,并冷却渗透的材料。 接触形成材料可以提供具有诸如温度上升特性和接触电阻特性等优异特性的真空阀或真空断路器的触头。
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